First Harmonic (2f) Characterisation of Resonant Frequency and Q-Factor of Micromechanical Transducers

In this paper, the response to the first harmonic component (2f) of the electrostatic force in single terminal driven electrostatic comb-drive and parallel-plate drive was used as a signal to extract device parameters, namely, the Q-factor and resonant frequency instead of the fundamental (1f) resonance response. It is shown that the difficulty in motional measurement due to electrical cross-talk (parasitics) using 1f measurement can be overcome with a higher signal-to-noise ratio of the 2f signal. Both atmospheric (low-Q) and reduced pressure environment were investigated using off-chip electronics and lock-in amplifier. The measurements were done on the electrostatic comb-drive and capacitive parallel plate sensing plates that form the two core modules of a yaw rate sensor (dual-axis resonator). The effects of AC and DC bias voltages on the measured response have been investigated. Experimental amplitude and phase response data have been analysed using the Lorentzian curve-fit, Resonance Curve Area (RCA) method, the half-power bandwidth method (3 dB) and the Nyquist plot for data fitting and determination of the Q-factor and resonance frequency.     

板载电源模块--开放式与封闭式的选择

目前,分布式电源架构被广泛用于通信和计算设备中,该电源架构经常采用板载电源(BMP)模块,在尽可能靠近负载点的地方进行电源变换.     

Speciation Analysis of Inorganic Tin (Sn(II)/Sn(IV)) by Graphite Furnace Atomic Absorption Spectrometry Following Ion-Exchange Separation

A new method based on anion exchange resin separation and graphite furnace atomic absorption spectrometry (GFAAS) detection is proposed for the determination of inorganic tin species. The result showed that Sn(IV) was quantitatively retained on the resin when [HCl] = 9.0 mol · L⁻¹, but Sn(II) could not be adsorbed on the resin under the same condition. Thus, a separation of Sn(II) and Sn(IV) has been realized. When the concentration of NaOH solution was between 2.0–7.0 mol · L⁻¹, Sn(IV) that adsorbed on the resin could be eluated from the resin completely. Meanwhile, under the atmosphere and the nitrogen states, the translation between Sn(II) and Sn(IV) was investigated. Under the optimal conditions, the detection limit of Sn(IV) is 0.40 μg · L⁻¹ with RSD of 2.3% (n = 5, c = 2.0 μg · L⁻¹). The proposed method was applied to the speciation analysis of tin in different water samples and the recovery of total Sn was in the range of 98.7–101.7%. In order to verify the accuracy of the method, a certified reference water sample was analyzed and the results obtained were in good agreement with the certified value.     

脉冲电镀最佳参数之探索和优化

本文利用正交实验法对脉冲电镀各控制参数进行试验,对影响分散能力、镀层可靠性及外观质量的各种因素进行探讨,寻找影响外观质量的显著因子并加以控制,同时进一步优化脉冲电镀的工艺参数。     

Integrated magnetic full wave converter with flexible output inductor

A new integrated magnetic full wave DC/DC power converter that provides flexible transformer design by incorporating an independent output inductor winding is introduced. The transformer is implemented on a traditional three-leg magnetic core. The inductor winding can be separately designed to control the output current ripple. The cross-sectional area of the inductor core leg can be reduced dramatically. The operation and performance of the proposed circuit are verified on a 100 W prototype converter.     

一种简单的S参数去嵌入技术

介绍了在低成本夹具上，任意微带结构二端口网络S参数去嵌入的方法；该方法用于获取放大器模块的S参数，根据这些参数设计的C波段的放大器实测结果与仿真一致。     

Crystallographic report: Bis(norfloxacin)dilead(II) tetranitrate, [Pb2(H‐Norf)2(ONO2)4]

The centrosymmetric binuclear structure of [Pb₂(H‐Norf)₂(ONO₂)₄]shows the geometry around each lead(II) atom to be distorted trigonal bipyramidal with Pb–O distances ranging from 2.357(3) to 2.769(4) Å. Copyright © 2003 John Wiley & Sons, Ltd.     

随机模拟在电信网性能评价中的应用

本文介绍了可在微机上实现大规模电信网践模拟的实用化软件ＳＩＭＵＮＥＴ，及基所采用的无时钟事件追踪法。该软件可用规划中的电信网络和实际网路的模拟及性能评价，也可用于不同流量控制算法的评价。文中给出一个评价实例。     

BAHADUR ASYMPTOTIC EFFICIENCY IN A SEMIPARAMETRIC REGRESSION MODEL

ＢＡＨＡＤＵＲＡＳＹＭＰＴＯＴＩＣＥＦＦＩＣＩＥＮＣＹＩＮＡＳＥＭＩＰＡＲＡＭＥＴＲＩＣＲＥＧＲＥＳＳＩＯＮＭＯＤＥＬ￥ＬＩＡＮＧＨＵＡ；ＣＨＥＮＧＰＩＮＧＡｂｓｔｒａｃｔ：ＴｈｅａｕｔｈｏｒＳｇｉｖｅＭＬＥθ１ＭＬｏｆθ１ｉｎｔｈｅｍｏｄｅｌＹ＝θ...     

A novel technique for profiling the lateral n- dopingconcentrations of submicron LDD MOS devices

This paper reports a simple I-V method for the first time to determine the lateral lightly-doped source/drain (S/D) profiles (n^- region) of LDD n-MOSFETs. One interesting result is the direct observation of the reverse-short-channel effect (RSCE). It is observed that S/D n^- doping profile is channel length dependent if reverse short-channel effect exists as a result of the interstitial imperfections caused by Oxide Enhanced Diffusion (OED) or S/D implant. Not only the lateral profiles for long-channel devices but also for short-channel devices can be determined. One other practical application of the present method for device drain engineering has been demonstrated with a LATID MOS device drain engineering work. It is convincible that the proposed method is well suited for the characterization and optimization of submicron and deep-submicron MOSFETs in the current ULSI technology