High-breakdown-voltage AlSbAs/InAs n-channel field-effecttransistors

InAs channel field-effect transistors of 1-μm gate length were grown by molecular beam epitaxy and observed to operate at channel electric fields (20 kV/cm) higher than previously demonstrated and several times greater than the threshold for impact ionization in bulk InAs. Voltage gains on the order of 10 were observed with transconductances as high as 414 mS/mm and output conductances as low as 33 mS/mm. These voltage gains are comparable to those of GaAs-based devices and are the highest observed for InAs channel devices. The results demonstrate the potential for practical room-temperature operation of InAs FETs     

氩离子激光掺铒光纤的双稳态

分析了掺铒光纤双稳态（ＥＤＦＯＢ）的工作原理、工作条件和特性，并利用氩离子激光（５１４．５ｎｍ）实现了ＥＤＦＯＢ的低功率（＜１０ｍＷ）运转。实验与理论结果基本相符。     

Matching score properties between range profiles of high-resolutionradar targets

In this paper, how the statistical properties of the matching scores are affected by the carrier frequency, the aspect variation, the range resolution, and the target complexity are studied. The statistical parameters (mean and standard deviation) of the matching scores among range profiles of independent objects are derived, and their values are used as references to determine the threshold values for target identification. It is found that the range profile obtained at a certain carrier frequency can also be used as the feature vector for radars operated at shifted frequencies if the range resolution is fine enough or the target is simple. It is also found that a radar with higher range resolution can tolerate more aspect variation, yielding a significant advantage in saving memory space for establishing the data base. The results obtained can have several applications such as target identification, data association in multiple target tracking, and target direction determination when widely-spaced high-resolution radars are employed     

一种可用于可调谐环行Ti：Al_2O_3激光器的宽带单向器

本文介绍一种宽带单向器的原理及设计。选用ＴＧＧ作磁旋光介质，旋光石英晶片作补偿片，所设计的色散补偿型宽带单向器预计可在７００～１０００ｎｍ波长范围内实现环行激光腔中的单向行波运行；将其应用在可调谐环行Ｔｉ：Ａｌ２Ｏ３激光器中，获得了良好的实验结果。     

Enhancement of modulation bandwidth of laser diodes by injection locking

In this letter, we suggest a new method for significantly enhancing the intrinsic bandwidth of a laser diode through the use of an injection locking technique. Our analysis shows that for moderate and high-injection levels, the bandwidth of a laser diode can be increased to several times its free-running bandwidth.     

光纤温度传感器综述

本文阐述了温度传感器的概况和使用要求，详细地论述了目前国外各类光纤温度传感器的原理、结构、特点、技术水平和发展状况。     

连续运转的掺钛蓝宝石激光器

本文报导一种连续波氩离子激光泵浦的掺钛蓝宝石激光器。在氩离子激光功率(全谱线)为10.45瓦且仅用一组腔镜时,获得最大平均功率超过1000mW、调谐范围750～850nm的掺钛蓝宝石激光输出。     

美国大联盟高清晰度电视地面传输系统野外测试结果

本文概述了ＧＡ－ＨＤＴＶ的地面ＶＳＢ传输系统的野外测试验情况。此次测试由联邦以通信委员会高级电视业务咨询委员会负责组织。     

森林火情监测预报研究

对现行的森林火情监测方法进行了分析比较。根据实际存在的难题，提出了料为产用的实施方案及应采取的技术措施，进行了实地试验，取得较好的效果。     

High-T/sub 0/ strain-compensated InGaAsSb-AlGaAsSb quantum-well lasers emitting at 2.43 /spl mu/m

Strain-compensated InGaAsSb-AlGaAsSb quantum-well (QW) lasers emitting near 2.5 /spl mu/m have been grown by solid-source molecular beam epitaxy. The relatively high arsenic composition causing a tensile strain in the Al/sub 0.25/GaAs/sub 0.08/Sb barriers lowers the valence band edge and the hole energy level, leading to an increased hole confinement and improved laser performance. A 60% external differential efficiency in pulsed mode was achieved for 1000-/spl mu/m-long lasers emitting at 2.43 /spl mu/m. A characteristic temperature T/sub 0/ as high as 163 K and a lasing-wavelength temperature dependence of 1.02 nm//spl deg/C were obtained at room temperature. For 2000 /spl times/ 200 /spl mu/m/sup 2/ broad-area three-QW lasers without lateral current confinement, a low pulsed threshold of 275 A/cm/sup 2/ was measured.