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181.
蓝牙与IEEE802.11g无线局域网(Wireless Local Area Network,WLAN)都工作在2.4GHz频段上,因此它们之间存在一定的干扰。分析了蓝牙与IEEE802.11g通信系统之间的干扰,并提出了解决这一问题的两种方法:自适应跳频和删除标记法,并对两种方法的性能做了比较。 相似文献
182.
Shi-Jin Ding Hang Hu Lim H.F. Kim S.J. Yu X.F. Chunxiang Zhu Li M.F. Byung Jin Cho Chan D.S.H. Rustagi S.C. Yu M.B. Chin A. Dim-Lee Kwong 《Electron Device Letters, IEEE》2003,24(12):730-732
For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications. 相似文献
183.
The hydrogenated poly-silicon germanium (poly-SiGe:H) epitaxial film has been investigated using gold-induced lateral crystallization (Au-ILC) technology on a-SiGe:H layers at 10-h 350/spl deg/C annealing temperature and 60-sccm hydrogen (H/sub 2/) content. Using this optimal condition, the growth rate of the induced Au was as large as 15.9 /spl mu/m/h. With a low annealing temperature (/spl les/400/spl deg/C) and large growth rate, this novel technology will be noticeably useful for poly-SiGe:H pin IR-sensing fabrication on a conventional precoated indium tin oxide (ITO)-glass substrate. Under a 1-/spl mu/W IR-LED incident light (with peak wave length at 710 nm) and at a 5-V biased voltage, the poly-SiGe:H pin IR sensor developed by the Au-ILC technology, i.e., an Al (anode)/n poly-SiGe:H/i poly-SiGe:H/p poly-SiGe:H/ITO (cathode)/glass-substrate structure allowed for maximum optical gain and response speed. The optical gains and the response speeds were almost 600 and 130%, respectively, better than that of a traditional pin type. Meanwhile, the FWHM of a poly-SiGe:H pin sensor with Au-ILC technology was reduced from 280 to 150 nm. This reveals excellent IR-sensing selectivity. These IR-sensing trials demonstrated again that the proposed Au-ILC technology has very useful application in the field of low cost integrated circuits on optoelectronic applications. 相似文献
184.
185.
Shiao-Shien Chen Tung-Yang Chen Tien-Hao Tang Jin-Lian Su Tzer-Min Shen Jen-Kon Chen 《Electron Devices, IEEE Transactions on》2003,50(7):1683-1689
This paper proposes a novel low-leakage BiCMOS deep-trench (DT) diode in a 0.18-/spl mu/m silicon germanium (SiGe) BiCMOS process. By means of the DT and an n/sup +/ buried layer in the SiGe BiCMOS process, a parasitic vertical p-n-p bipolar transistor with an open-base configuration is formed in the BiCMOS DT diode. Based on the two-dimensional (2-D) simulation and measured results, the BiCMOS DT diode indeed has the lowest substrate leakage current as compared to the conventional p/sup +//n-well diode even at high temperature conditions, which mainly results from the existence of the parasitic open-base bipolar transistor. Considering the applications of the diode string in electrostatic discharge (ESD) protection circuit designs, the BiCMOS DT diode string also provides a good ESD performance. Owing to the characteristics of the low leakage current and high ESD robustness, it is very convenient for circuit designers to use the BiCMOS DT diode string in their IC designs. 相似文献
186.
Qi Wang Mosa Ali Abu-Rgheff 《Wireless Communications, IEEE》2006,13(6):68-76
In the all-IP wireless networks beyond the third generation, mobility management can be effectively achieved by applying mobile IP (MIP) and the session initiation protocol (SIP) jointly. Nevertheless, an efficient combination of both protocols remains an open research issue. Conventional hybrid MIP-SIP mobility architectures operate MIP and SIP almost independently, resulting in significant redundant costs. This article investigates the representative hybrid MIP-SIP architectures and explores the joint optimizations between MIP and SIP for a more cost-efficient mobility support whilst utilizing their complementary power. Two novel design approaches are presented. The first approach culminates in a tightly integrated architecture, which merges the redundant mobility entities in MIP and SIP to yield maximum system efficiency. The other approach leads to a loosely integrated architecture, where necessary interactions are introduced between MIP and SIP mobility servers while their physical entities are kept intact. Major mobility procedures, including location update, session setup and handoff, are discussed in these architectures. The analytical results demonstrate that both proposed architectures outperform typical hybrid MIP-SIP architectures in terms of clear-cut reduced signaling costs 相似文献
187.
188.
Dispersion-relation-preserving FDTD algorithms for large-scale three-dimensional problems 总被引:1,自引:0,他引:1
We introduce dispersion-relation-preserving (DRP) algorithms to minimize the numerical dispersion error in large-scale three-dimensional (3D) finite-difference time-domain (FDTD) simulations. The dispersion error is first expanded in spherical harmonics in terms of the propagation angle and the leading order terms of the series are made equal to zero. Frequency-dependent FDTD coefficients are then obtained and subsequently expanded in a polynomial (Taylor) series in the frequency variable. An inverse Fourier transformation is used to allow for the incorporation of the new coefficients into the FDTD updates. Butterworth or Chebyshev filters are subsequently employed to fine-tune the FDTD coefficients for a given narrowband or broadband range of frequencies of interest. Numerical results are used to compare the proposed 3D DRP-FDTD schemes against traditional high-order FDTD schemes. 相似文献
189.
190.
针对电信运营商在构建内部数据通信网(DCN)时遇到的各应用系统的隔离问题,详细介绍了目前几种主流的虚拟专用网(VPN)技术,并进行分析比较,最后提出了运营商内部数据通信网的VPN解决方案。 相似文献