An Efficient Selective Oxidation of Alcohols with Potassium Permanganate Adsorbed on Aluminum Silicate under Solvent-free Conditions and Shaking

A new procedure for the selective oxidation of alcohols to the corresponding aldehydes and ketones with potassium permanganate supported on aluminum silicate at room temperature under solvent-free conditions and shaking is reported.     

IP网络实施QoS的策略分析

介绍了衡量IP QoS的技术指标和业务等级的划分，提出了IP网络中QoS的实施建议。     

人工智能的原理及应用

介绍了人工智能的发展，并对改进的神经网络专家系统的优越性做了介绍，指出了神经网络专家系统广阔的应用前景及实现。     

On trading wavelengths with fibers: a cost-performance based study

We consider the effect of multiple fibers on wavelength division multiplexing networks without wavelength conversion. We study networks with dynamic wavelength routing and develop accurate analytical models to compare various possible options using single- and multiple-fiber networks. We use results of an analytical model and simulation-based studies to evaluate the blocking performance and cost of multifiber networks. The number of fibers required providing high performance in multifiber networks and their costs are compared. A case is made for using multiple fibers in each link with fewer wavelengths instead of using a single fiber with many wavelengths. In particular, we show that a network with four fibers per link and with four wavelengths on each fiber without any wavelength conversion on any node yields similar same performance as the networks with one fiber per link and 16 wavelengths per fiber on each link and with full wavelength conversion capability on all nodes. In addition, the multifiber network may also offer the cost advantage depending on the relative cost of components. We develop a parametric cost model to show that multiple fibers in each link are an attractive option. Finally, such multifiber networks also has fault tolerance, with respect to a single fiber failure, already built into the system.     

High-performance MIM capacitor using ALD high-k HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectrics

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.     

正交数字上变频器AD9857的使用

介绍数字正交上变频器AD9857的原理、功能和基本使用方法以及如何通过单片机8051实现对它的编程控制。     

A novel InP/InGaAs TEBT for ultralow current operations

A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.     

分布式光纤拉曼放大器的增益平坦设计

介绍了在波分复用（WDM）系统中分布式光纤拉曼放大器（FRA）的理论分析模型。在此基础上，对增益平坦设计所需考虑的因素进行了分析；最后通过试验证明了它的有效性。     

Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.     

SiGe VCOs operating up to 88 GHz, suitable for automotive radar sensors

VCOs fully integrated in an SiGe preproduction technology are presented. By cutting interconnection lines a wide frequency range can be covered, up to 88.4 GHz. Special effort has been made to meet the demands for 77 GHz automotive radar. In the corresponding tuning range from 75.3 to 79.6 GHz, an output power of about 11 dBm (with -2.2 dBm potential measurement uncertainty) was achieved for each of the two complementary outputs, i.e. in total 14 dBm. The phase noise is about -94 dBc/Hz at 1 MHz offset frequency.