Compound buried layer SOI high voltage device with a step buried oxide

A silicon-on-insulator (SOI) high performance lateral double-diffusion metal oxide semiconductor (LDMOS) on a compound buried layer (CBL) with a step buried oxide (SBO CBL SOI) is proposed.The step buried oxide locates holes in the top interface of the upper buried oxide (UBO) layer.Furthermore,holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide (LBO) layer.Consequently,the electric fields in both the thin LBO and the thick UBO are enhanced by these holes,leading to an improved breakdown voltage.The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer.Moreover,SBO CBL SOI can also reduce the self-heating effect.     

高密度平面靶等离子体中激光驱动冲击波加速离子的能谱展宽

本文对超短超强激光脉冲辐照高密度等离子体产生的静电冲击波加速离子的能谱展宽机理进行了数值研究.着重讨论了三种冲击波加速离子的能谱展宽机理:能量沉积到离子中使得冲击波前沿不断减速,被加速离子与背景粒子的碰撞,以及高能离子到达靶背面时受到鞘层场进一步加速.还研究了驱动激光脉冲宽度对冲击波加速离子能谱宽度的影响. 关键词： 激光等离子体 冲击波加速 能谱展宽     

碳气凝胶及活化碳气凝胶电极材料制备与性能

 以间苯二酚(R)-甲醛(F)为原料,制备了有机气凝胶和碳气凝胶,并对其进行二氧化碳活化。X射线衍射(XRD)测试表明,二氧化碳渗入到碳气凝胶网络结构发生反应,造成(002)峰和(100)峰减弱;扫描电子显微镜(SEM)测试表明,活化没有破坏碳气凝胶的骨架结构,而是增加了大量的nm尺度微孔,从而大大提高了碳气凝胶的比表面积和微孔比例。在1 mol/L KOH电解液中进行了循环伏安和计时电位扫描测试,电极材料电化学性能稳定,具有较好的可逆性,在1 mA/s电流密度下进行充放电测试,得到活化前电极比电容为103 F/g,活化后由于比表面积的增加,比电容达到371 F/g,是一种理想的电化学电极材料。     

透射光栅的实验标定和衍射效率的理论模拟

透射光栅广泛应用于软X射线能谱测量.为了获得用于惯性约束聚变研究的透射光栅的各级衍射效率及其他参数,在北京同步辐射源上200—1600 eV能量范围内对其进行了标定,获得了透射光栅衍射效率的实验结果.扩展了透射光栅衍射效率的计算方法,提出了7边准梯形截面衍射效率计算模型.分析拟合了实验数据,理论结果与实验结果很好符合.得到了7边准梯形的透射光栅栅线截面结构. 关键词： 透射光栅 衍射效率 实验标定 光栅模型     

100 W全光纤声光调Q光纤激光器实验研究

 报道了一台全光纤结构主振荡功率放大(MOPA)型掺镱脉冲光纤激光器,以光纤光栅为腔镜,光纤型声光调Q的光纤激光器为种子源,通过两级掺镱双包层光纤放大器实现功率放大。对声光调Q的光纤激光器输出特性进行了研究,比较了不同泵浦波长、不同重复频率对激光输出功率和脉冲宽度的影响,并实现了最短脉冲宽度25 ns、单脉冲能量45 μJ的脉冲激光输出。在重复频率50 kHz时,对脉冲宽度130 ns、平均功率0.6 W的种子光进行放大,得到了平均功率102.5 W、脉冲宽度约240 ns的激光输出。     

基于法布里-珀罗标准具的532 nm多普勒测风激光雷达系统设计和分析

 设计了采用532 nm 种子注入稳频钇铝石榴石（YAG）激光器作为辐射源的基于四通道法布里-珀罗标准具的瑞利和米散射测风激光雷达系统。介绍了激光雷达的多普勒测量基本原理;给出了雷达系统的主要参数,重点对基于分子后向散射信号的外侧双通道标准具的带宽、自由谱间距、峰值间距等指标进行了详细设计与分析,确定了内侧双通道标准具参数;对全系统速度灵敏度、信噪比与探测距离的关系进行了理论模拟。结果表明,可以实现从边界层至对流层高低空一体化探测。     

Femtosecond electron pulse compression by using the time focusing technique in ultrafast electron diffraction

We present a new model of an electron gun for generating subrelativistic femtosecond (fs) electron pulses. The basic idea is to utilize a dc acceleration stage combined with a time focusing region, the time focusing electrode generates an electron energy chirp for bunching at the target. Without considering the space charge effects, simulations of the electron gun were carried out under the conditions of different dc voltages and various slopes of the voltage added on the time focusing electrode. Tracing and simulating large numbers of photoelectrons through Monte-Carlo and finite difference methods, the electron pulses with 1 ps can be compressed to 55 fs, which will allow significant advances in the field of ultrafast diagnosis.     

Growth and properties of wide spectral white light emitting diodes

Wide spectral white light emitting diodes have been designed and grown on a sapphire substrate by using a metal-organic chemical vapor deposition system. Three quantum wells with blue-light-emitting, green-light-emitting and red-light-emitting structures were grown according to the design. The surface morphology of the film was observed by using atomic force microscopy. The films were characterized by their photoluminescence measurements. X-ray diffraction θ/2θ scan spectroscopy was carried out on the multi-quantum wells. The secondary fringes of the symmetric ω/2θ X-ray diffraction scan peaks indicate that the thicknesses and the alloy compositions of the individual quantum wells are repeatable throughout the active region. The room temperature photoluminescence spectra of the structures indicate that the white light emission of the multi-quantum wells is obtained. The light spectrum covers 400-700 nm, which is almost the whole visible light spectrum.     

纳米尺度MOSFET过剩噪声的定性分析

最近实验表明纳米尺度MOSFET中的过剩噪声主要为散粒噪声,而此前研究认为MOSFET中不存在散粒噪声,短沟道MOSFET中的过剩噪声为热噪声. 本文基于器件电流模型分析散粒噪声取代热噪声成为过剩噪声主要成分的转变条件,根据该条件对纳米尺度MOSFET噪声特性的预测与文献报道的实验现象、模拟结果以及介观散粒噪声相关结论相符合. 关键词： 散粒噪声 过剩噪声 纳米尺度MOSFET     

Electronic structures,magnetic properties and band alignments of 3d transition metal atoms doped monolayer MoS2

Utilizing first-principles calculations, the electronic structures, magnetic properties and band alignments of monolayer MoS₂ doped by 3d transition metal atoms have been investigated. It is found that in V, Cr, Mn, Fe-doped monolayers, the nearest neighboring S atoms (S_NN) are antiferromagnetically polarized with the doped atoms. While in Co, Ni, Cu, Zn-doped systems, the S_NN are ferromagnetically coupled with the doped atoms. Moreover, the nearest neighboring Mo atoms also demonstrate spin polarization. Compared with pristine monolayer MoS₂, little change is found for the band edges' positions in the doped systems. The Fermi level is located in the spin-polarized impurity bands, implying a half-metallic state. These results provide fundamental insights for doped monolayer MoS₂ applying in spintronic, optoelectronic and electronic devices.