离子束混合工艺对材料抗蚀性能的影响

本文介绍了离子束混合工艺方法。与直接注入相比较,离子束混合所使用的设备造价低1/4—1/2,而生产效率可提高1—2个数量级,因而使生产成本大幅度降低,这无疑对离子束工艺的实际应用将产生巨大的促进作用。 通过对轴承材料(GCr15和Cr4Mo4V)经Cr、N、Ta不同元素的混合处理后,在0.5M H_2SO_4和0.1M NaCl的缓冲溶液中的阳极极化曲线表明经混合处理后的两种材料试样,其抗蚀能力和抗点蚀能力均大大提高,这与直接注入的试样效果是一致的。 通过俄歇谱仪和透射电镜的分析结果表明混合是成功的,且在一定的条件下,形成非晶组织。 本文的结论是,无论是离子的直接注入还是离子束混合,对提高轴承材料的抗腐蚀性能都是有效的方法,特别是离子束混合技术具有更大的应用前景。     

Two-electrode DFB laser filter used as a wide tunable narrow-bandFM receiver: tuning analysis, characteristics and experimental FSK-WDMsystem

Characteristics of a two-electrode DFB laser filter are studied both theoretically and experimentally. Using a matrix analysis of spontaneous emission, a continuous tuning range of 6.7 Å is achieved by changing both net field gains of the two electrodes. A total discontinuous tuning range of over 10 nm comprising alternating mode jumps and continuous tuning range of 4 Å are measured experimentally. The laser filter presents a FWHM bandwidth of 5 GHz which depends on the optical input power. In addition, it is demonstrated that a DFB laser filter can act as a frequency discriminator/photodetector, i.e., a narrow-band FM receiver, with a uniform bandwidth of 1.5 GHz. Using the two-electrode DFB laser for both transmitter and receiver, a two-channel FSK-WDM transmission system utilizing the discontinuous tuning range is reported. The advantage of such a device is the simplicity as compared to the heterodyne technique     

基于分形维数的液体爆炸分散中界面破碎形态研究

通过对爆炸抛撒图象的处理,得到液体界面的曲线.采用盒维数的计算方式,计算界面曲线的分形维数.通过对各时刻液体界面分形维数的变化研究,分析爆炸抛撒近场阶段的变化过程,同时观察到蘑菇状尖顶的出现与破碎,以及空化区域的形成和消失现象。     

环境试验与可靠性试验的关系

从环境试验和可靠性试验的相关标准入手，详细论述了两者之间的相互关系与区别：互为补充，互为依存，共同发展，共同为保障产品的环境适应性和使用可靠性发挥作用。最后阐述了加强自然环境试验的重要性，它是检验实验结果的基本标准。     

调频步进信号处理方法探讨

调频步进信号是一种新的高距离分辨率信号。文章首先简要阐述了线性调频信号的处理过程；其次对比步进频率、线性调频步进信号的处理过程，得到一种新的处理方法-合成处理法，最后通过仿真论证其正确性。     

X441对数放大器的原理及其应用

本文主要介绍X441单片对数放大器的基本原理和应用,并列举了一些具体应用电路。     

固定电子分立元器件用胶粘剂E—4X的研制

介绍了一种不同于灌封材料，具有触变性，粘接性能优良，使用方便的固定电子分立元器件用胶粘剂Ｅ－４Ｘ。与国外同类产品Ｅｐ－４３３ｘ胶粘剂对比，其综合性能优于Ｅｐ－４３３胶粘剂。     

Part II: An example of the use of the comsis software: simulation of an optical network which uses wavelength multiplexing,fsk modulation format and direct detection

This second article deals with using the Comsis software for a particular application. Simulation is used to determine the maximum channel density in presence of crosstalk. In a first part, the modelling of the system is described. The simulation parameters of different optical elements are given. The results show that in the case of channels modulated at 500 Mbitls using fsk modulation format, and a direct detection operation at 1,5 μm, a minimum spacing of 6 GHz can be obtained with a 2 dB penalty. Thus if only the bandwidth of the erbium doped fibre amplifier is taken into account, the maximum number of channels which can be used is 250. However if the fsr (free spectral range) of optical filter is taken into account, the maximun number of channels is limited to 30.     

Low-temperature growth of silicon-boron layer as solid diffusionsource for polysilicon contacted p+-n shallow junction

A new material, Si-B, is proposed as a solid diffusion source for fabrication of poly-Si contacted p⁺-n shallow junctions. The junction depth of the Si-B source diode has been measured and compared with that of a BF₂⁺-implanted poly-Si source diode. It was found that the Si-B source diode had a much shallower junction and was less sensitive to thermal budget than the BF₂⁺ source diode. This was attributed to the smaller surface concentration and diffusivity of boron in the silicon in Si-B source diodes. Regarding electrical characteristics of diodes with a junction depth over 500 Å, a forward ideality factor of better than 1.01 over 8 decades and a reverse-current density lower than 0.5 nA/cm² at -5 V were obtained. As the junction depth shrank to 300 Å, the ideality factor and reverse current density of diodes increased slightly to 1.05 and 1.16 nA/cm², respectively. These results demonstrated that a uniform ultrashallow p⁺-n junction can be obtained by using a thin Si-B layer as a diffusion source