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281.
In this paper, we describe a method for increasing the external efficiency of polymer light‐emitting diodes (LEDs) by coupling out waveguided light with Bragg gratings. We numerically model the waveguide modes in a typical LED structure and demonstrate how optimizing layer thicknesses and reducing waveguide absorption can enhance the grating outcoupling. The gratings were created by a soft‐lithography technique that minimizes changes to the conventional LED structure. Using one‐dimensional and two‐dimensional gratings, we were able to increase the forward‐directed emission by 47 % and 70 %, respectively, and the external quantum efficiency by 15 % and 25 %. 相似文献
282.
Jokerst N.M. Gaylord T.K. Glytsis E. Brooke M.A. Cho S. Nonaka T. Suzuki T. Geddis D.L. Shin J. Villalaz R. Hall J. Chellapa A. Vrazel M. 《Advanced Packaging, IEEE Transactions on》2004,27(2):376-385
This paper explores design options for planar optical interconnections integrated onto boards, discusses fabrication options for both beam turning and embedded interconnections to optoelectronic devices, describes integration processes for creating embedded planar optical interconnections, and discusses measurement results for a number of integration schemes that have been demonstrated by the authors. In the area of optical interconnections with beams coupled to and from the board, the topics covered include integrated metal-coated polymer mirrors and volume holographic gratings for optical beam turning perpendicular to the board. Optical interconnections that utilize active thin film (approximately 1-5 /spl mu/m thick) optoelectronic components embedded in the board are also discussed, using both Si and high temperature FR-4 substrates. Both direct and evanescent coupling of optical signals into and out of the waveguide are discussed using embedded optical lasers and photodetectors. 相似文献
283.
B. Ma P.I. Djurovich S. Garon B. Alleyne M.E. Thompson 《Advanced functional materials》2006,16(18):2438-2446
Efficient blue‐, green‐, and red‐light‐emitting organic diodes are fabricated using binuclear platinum complexes as phosphorescent dopants. The series of complexes used here have pyrazolate bridging ligands and the general formula C∧NPt(μ‐pz)2PtC∧N (where C∧N = 2‐(4′,6′‐difluorophenyl)pyridinato‐N,C2′, pz = pyrazole ( 1 ), 3‐methyl‐5‐tert‐butylpyrazole ( 2 ), and 3,5‐bis(tert‐butyl)pyrazole ( 3 )). The Pt–Pt distance in the complexes, which decreases in the order 1 > 2 > 3 , solely determines the electroluminescence color of the organic light‐emitting diodes (OLEDs). Blue OLEDs fabricated using 8 % 1 doped into a 3,5‐bis(N‐carbazolyl)benzene (mCP) host have a quantum efficiency of 4.3 % at 120 Cd m–2, a brightness of 3900 Cd m–2 at 12 V, and Commission Internationale de L'Eclairage (CIE) coordinates of (0.11, 0.24). Green and red OLEDs fabricated with 2 and 3 , respectively, also give high quantum efficiencies (~ 6.7 %), with CIE coordinates of (0.31, 0.63) and (0.59, 0.46), respectively. The current‐density–voltage characteristics of devices made using dopants 2 and 3 indicate that hole trapping is enhanced by short Pt–Pt distances (< 3.1 Å). Blue electrophosphorescence is achieved by taking advantage of the binuclear molecular geometry in order to suppress dopant intermolecular interactions. No evidence of low‐energy emission from aggregate states is observed in OLEDs made with 50 % 1 doped into mCP. OLEDs made using 100 % 1 as an emissive layer display red luminescence, which is believed to originate from distorted complexes with compressed Pt–Pt separations located in defect sites within the neat film. White OLEDs are fabricated using 1 and 3 in three different device architectures, either with one or two dopants in dual emissive layers or both dopants in a single emissive layer. All the white OLEDs have high quantum efficiency (~ 5 %) and brightness (~ 600 Cd m–2 at 10 V). 相似文献
284.
Learning in multiple model adaptive control switch 总被引:1,自引:0,他引:1
Including a learning mechanism in SMMAC (switched, multiple-model adaptive control) avoids the need for a priori knowledge of the model set of the plant to control and leads to a significant performance improvement with respect to the sole inclusion of an adaptive control channel in combination with switched fixed local controllers. 相似文献
285.
Stewart C. Kai Shen Dwarkadas S. Scott M.L. Jian Yin 《Distributed Systems Online, IEEE》2004,5(10):1-1
The growth of the Internet and of various intranets has spawned a wealth of online services, most of which are implemented on local-area clusters using remote invocation (for example, remote procedure call/remote method invocation) among manually placed application components. Component placement can be a significant challenge for large-scale services, particularly when application resource needs are workload dependent. Automatic component placement has the potential to maximize overall system throughput. The key idea is to construct (offline) a mapping between input workload and individual-component resource consumption. Such mappings, called component profiles, then support high-performance placement. Preliminary results on an online auction benchmark based on J2EE (Java 2 Platform, Enterprise Edition) suggest that profile-driven tools can identify placements that achieve near-optimal overall throughput. 相似文献
286.
M.S. Detrick G.N. Washington V.V. Subramaniam 《Mechatronics, IEEE/ASME Transactions on》2003,8(1):45-55
In this work, the diamond deposited by hot filament chemical vapor deposition (CVD) is polished using an atmospheric pressure plasma. In order to position the film relative to the plasma, a microactuator system is designed using a stack of domed piezoelectric actuators. A dynamic model based on the physical system is developed and the model parameters are measured experimentally. A system based on laser triangulation is used to measure the position of the diamond film relative to the plasma. Control techniques are used to reduce the oscillations during actuation and to eliminate the steady state positioning error. With the application of feedback control, the overshoot is reduced to 2% and the settling time is reduced to 0.3 s. A preliminary set of experiments is performed to relate process parameters to the final surface roughness of the diamond film. The parameters studied include the film's time of exposure to the plasma, the height of the film relative to the plasma, and the distance from the film to the center of the plasma. It is found that the optimum exposure time is 15 min and the reduction of surface roughness is greatest when the distance between the film and the plasma is at a minimum. The best results are obtained when the top of the film is even in elevation with the tip of the top electrode. The diamond film is translated laterally along the plasma. When feedback control is not used, there is no change in the surface roughness. With feedback control implemented, the surface roughness of the diamond film is reduced by 33%. 相似文献
287.
M. N. Levin A. V. Tatarintsev V. A. Makarenko V. R. Gitlin 《Russian Microelectronics》2006,35(5):329-336
A model is formulated that describes how radiation-induced charge accumulates in the gate oxide of a MOS structure and how it decays through tunneling and thermal emission. The model is used in a numerical analysis of the x-ray or UV adjustment of threshold voltage in MOS-circuit manufacture. The limits of this process technique are evaluated. 相似文献
288.
A. I. D’Souza M. G. Stapelbroek P. N. Dolan P. S. Wijewarnasuriya R. E. DeWames D. S. Smith J. C. Ehlert 《Journal of Electronic Materials》2003,32(7):633-638
The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg1−xCdxTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit
sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms
of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of
1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The
1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors
at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density
in the mid-10−15A/Hz1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth
in(f = 1 Hz, Vd = −60 mV, and Δf = 1 Hz) to dark current Id(Vd = −60 mV) was αSW-d = in/Id ∼ 1 × 10−3. The SWIR detectors measured at 0 mV under illuminated conditions had median αSW-P = in/Iph ∼ 7 × 10−6. For mid-wave infrared (MWIR) detectors, αMW-d = in/Id ∼ 2 × 10−4, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under
illuminated conditions at 98 K and −60 mV bias resulted in αMW-P = in/Iph = 4.16 ± 1.69 × 10−6. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias,
with a noise-current-to-photocurrent ratio, αMW-P, in the mid 10−6 range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, αLW-d = in/Id ∼ 6 × 10−6, for the best performers. The majority of the LWIR detectors exhibited αLW-d on the order of 2 × 10−5. The photo-induced 1/f noise had αLW-P = in/Iph ∼ 5 × 10−6. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if
this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps
are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as
a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular
bias. The 1/f noise was not a direct function of the applied bias. 相似文献
289.
M. Benkerri R. Halimi A. Bouabellou N. Benouattas 《Materials Science in Semiconductor Processing》2004,7(4-6):319
In this work, the solid state reaction between a thin film of copper and silicon has been studied using Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy and microprobe analysis. Cu films of 400 and 900 Å thicknesses are thermally evaporated on Si(1 1 1) substrates, part of them had previously been implanted with antimony ions of 5×1014 or 5×1015 at. cm−2 doses. The samples are heat-treated in vacuum at temperatures in the range 200–700 °C for various times. The results show the growth and formation of Cu3Si and Cu4Si silicides under crystallites shape dispatched on the sample surface, independently of the implantation dose. On the other hand, it is established that the copper layer is less and less consumed as the antimony dose increases, resulting in the accumulation of Sb+ ions at silicide/Si interface and in the silicide layer close to surface. The exposure of samples to air at room temperature shows the stability of Cu4Si phase whereas the Cu3Si silicide disappears to the benefit of the silicon dioxide formation. The observed phenomena are discussed. 相似文献
290.
The multihop optical network is the most appropriate solution to satisfy the increasing applications of Internet services. This paper extends the regular Kautz graph to one with multiple layers in order to produce more architectural variations. The connectivity between adjacent layers utilizes the systematic connection patterns of a regular Kautz graph. A routing algorithm based on its property is presented. Optical passive star (OPS) couplers are adopted to implement our new topologies. Three scheduling criteria that can solve the contention problem in the intermediate nodes are evaluated and compared in terms of their capability to improve the accessibility. 相似文献