VO2-Based Infrared Microbolometer Array

V0₂-based thin film materials on silicon substrates are fabricated by ion beam sputtering and a post-annealing which is different from the conventional fabricating method. An infrared linear microbolometer array with 128 pixels is prepared using as-deposited vanadium dioxide thin films. Optical and electrical properties for V0₂-based microbolometer array are tested.     

近非临界相位匹配温度调谐MgO：LiNbO3OPO

通过对MgO:LiNbO3参量过程温度相位匹配及走离角，允许参量等运转参数的理论计算与分析，确定了晶体的切割角度θ=82℃，以近非临界相位匹配（NCPM）取代NCPM，将温度调节范围控制在较低的温度上，研制了532nm泵浦的MgO:LiNbO3温度调谐脉冲光学参数振荡器（OPO），在800～1700nm波段实现连续调谐输出。参量泵浦功率密度阈值为57.3MW/cm^2，泵浦能量约2倍阈值处，单谐振（SRO）参量转换效率为11%以上。     

A new kind of compound solid-state quasi-optical power combiner

In this paper, a new kind of solid-state quasi-optical power combiner is presented. It consists of two or more singlecavity multiple-device power combiners and a Fabry-Perot cavity. The experimenal results using six Gunn diodes at X-band show that the total output power is higher than 400 mW, the total combining efficiency is as high as 83%, and the frequency stability is better than 10^?5.     

Electroluminescence of a Multi-Layered Organic Light-Emitting Diode Utilizing Trans-4-[p-[N-methyl-N-(hydroxymethyl)amino]styryl]-N-Methylphridinium Tetraphenylborate as the Active Layer

Employing an organic dye salt of trans-4-[p-[N-methyl-N-(hydroxymethyl)amino]styryl]-N-methylphridinium tetra\-phenylborate (ASPT) as the active layer, 8-hydrocyquinoline aluminium (Alq₃) as the electron transporting layer and N,N’-diphenyl-N,N’-bis(3-methylphenyl)-[1,1’-biphenyl]-4,4’-diamine (TPD) as the hole transporting layer, respectively, we fabricate a multi-layered organic light-emitting diode and observe the colour tunable electroluminescence (EL). The dependence of the EL spectra on the applied voltage is investigated in detail, and the recombination mechanism is discussed by considering the variation of the hole-electron recombination region.     

半导体集成电路在锂离子电池保护电路中的应用

本文首先扼要介绍锂离子电池保护电路的功能，然后分别介绍过充电保护，过放电保护，过电流保护，最后列举几种保护性半导体IC的性能及应用电路的结构。     

ADSS光缆的力学计算

介绍了ADSS光缆的力学计算，给出了光缆弧垂、张力、应变和悬长等计算公式，并对普遍采用的“悬链线”和“抛物线”两种计算方法加以比较。     

Laser-assisted sealing and testing for ceramic packaging of MEMS devices

In this work, a CO/sub 2/ laser-assisted silicon lid sealing process, utilizing Au80/Sn20 solder, for encapsulating gas breakdown test micro-electro-mechanical structures (MEMS) in a ceramic quad flatpack (CQFP) was studied. Wire bonded MEMS dies were sealed into CQFPs under various gas media, such as air, nitrogen, helium and vacuum. The gas breakdown test results showed a significantly higher breakdown voltage for vacuum packaged parts compared to those packaged in other various gas environments. Hermeticity testing according to MIL-STD-883E showed that the leak rate of the package was below 10/sup -8/ atm cc/s. The bonding was uniform and the bonding strength is believed to be comparable to the tensile strength of Au80/Sn20 solder.     

Phase Transition VO2 Thin Films for Optical Switches

This paper presents a method to make vanadium dioxide (VO₂) crystallites on silicon substrates by reactive ion beam sputtering. The thickness of the thin film is about 100nm. The phase transition temperature of VO₂ is 65°C. The transmittance of the semiconducting phase VO₂ is about 50% and it is reduced to as low as 3% in metal phase at the infrared wavelenghth spectrum. The extinction ratio of the optical switches is 12dB. and the insertion loss is of 1-2dB. The switching time is about 1ms.     

P-channel Ge/Si Hetero-nanocrystal Based MOSFET Memory

The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide T_ox=2nm and the dimensions of Si- and Ge-nanocrystal D_Si=D_Ge=5nm, the retention time of this device can reach ten years(~1×10~8s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage |V_g|=3V with respect to N-wells, respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI.     

ASP+ADO实现医院门诊在线查询

ASP技术由于其方便 ,灵活及可扩充性等特点和简明、高效的技术优势 ,在Web数据库的开发中获得了广泛的应用。简述了开发Web数据库的重要性 ,介绍了ASP技术的特点及其数据库访问原理 ,ADO对象。实例介绍了ASP实现医院门诊在线查询的方法