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Efficiency Enhancement of Dye-Sensitized Solar Cells: Using Salt CuI as an Additive in an Ionic Liquid 下载免费PDF全文
Energy conversion efficiency of the dye-sensitized solar cell is improved from 3.5% to 4.5% by adding a small amount of CuI into an ionic liquid electrolyte. It is found that other copper-I salts, for example, CuBr, have the same effect for the dye-sensitized solar cell. Experimental results show that no Cu^2+ ions exist in this electrolyte. It is suggested that this improvement is caused by the adsorption of Cu^+ onto the TiO2 porous film. 相似文献
995.
Photoinduced resistance change ( △ R/R) in an oxygen-deficient La0.9Sr0.1MnO3-δ thin film is studied. At room temperature, the resistance change of about 30% and response time of about 75 ns are observed under the illumination with a 532nm laser pulse of 7ns and light power of 750mW. It is also found that △ R/R changes with the light power. The phenomena are explained in terms of the photoinduced hole carriers and localized insulator-to-metal transition, which may have potential applications in optoelectronic devices. 相似文献
996.
Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer 下载免费PDF全文
A new A1GaN/A1N/GaN high electron mobility transistor (HEMT) structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition (MOCVD). The structure demonstrates significant enhancement of two-dimensional electron gas (2DEG) mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm. 相似文献
997.
Development of the Technique for Fabricating Submicron Moire Gratings on Metal Materials Using Focused Ion Beam Milling 下载免费PDF全文
A focused gallium ion (Ga+) beam is used to fabricate micro/submicron spacing gratings on the surface of porous NiTi shape memory alloy (SMA ). The crossing type of gratings with double-frequency (25001/mm and 50001/mm) using the focused ion beam (FIB) milling are successfully produced in a combination mode or superposition mode. Based on the double-frequency gratings, high-quality scanning electron microscopy (SEM) Moird patterns are obtained to study the micro-scale deformation of porous NiTi SMA. The grating fabrication technique is discussed in detail. The experimental results verify the feasibility of fabricating high frequency grating on metal surface using FIB milling. 相似文献
998.
Based on the hexagonal BN structure, six possible layered B~ CN structures are constructed. Their total energies, lattice constants as well as electronic properties are calculated using the ab initio pseudopotential density functional method within the local density approximation. The calculated results show that the B2 CN-V configuration with AA stacking sequence is the most stable among the six B2CN layered structures. The characteristics of electronic structures indicate that the B2 CN-V shows metallicity, which mainly comes from -B1-C-B1-C- chains. 相似文献
999.
The creep motion in a two-dimensional fully frustrated square lattice Coulomb gas model with disorders is studied by using the Monte Carlo technique. The dependence of charge current density J on electric field E is investigated at low temperature T and at low E. The results show that the creep obeys the Arrhenius law J - C(T) exp[-U(E)/T]. The prefactor C(T) increases with the temperature in a power law relation with an exponent about 3.0. The energy barrier U ( E) increases logarithmically with Ec,/ E as U ( E) - Uo ln( Ec/ E) with Ec being the critical field at zero temperature. 相似文献
1000.
In situ energy dispersive x-ray diffraction for natural marmatite (Zn0.76Fe0.23S) is performed up to 17. 7 GPa and 623 K. It is fit, ted by the Birch-Murnaghan equation of state (EOS) that Ko and α0 for marmatite are 85(3)GPa and 0.79(16)*10^-4 K^-1, respectively. Fe^2+ isomorphic replacing to Zn^2+ in natural crystal is responsible for high bulk modulus and thermal expansivity of marmatite. Temperature derivative of bulk modulus (OK/OT)p for marmatite is fitted to be -0.044(23) GPaK^-1. The unambiguous B3-B1 phase boundaries for marmatite are determined to be Pupper(GPa)= 15.50 - 0.016T(℃) and Plower (GPa)=9.94-0.012T(℃) at 300-623K. 相似文献