化学镀钴基合金镀液中钴的快速测定

研究了采用显色剂 苦胺酸偶氮变色酸对化学镀钴基合金镀液中钴含量进行测定的试验条件,在pH11的氨 氯化铵缓冲溶液中,钴与显色剂配合物的最大吸收峰在650nm波长处,钴(Ⅱ)在0～60μg/25ml范围内服从比耳定律,表观摩尔吸光系数为3.1×104L·mol-1·cm-1。该法测定钴的选择性好,在大量镍存在下,也能准确测定,对镀液样品进行了测定,相对标准偏差小于1%,结果满意。     

Advanced Current Collectors for Alkali Metal Anodes

High-energy-density batteries are in urgent need to solve the ever-increasing energy storage demand for portable electronic devices, electric vehicles, and renewable solar and wind energy systems. Alkali metals, typically lithium(Li), sodium(Na) and potassium(K), are considered as the promising anode materials owing to their low electrochemical potential, low density, and high theoretical gravimetric capacities. However, the problem of dendrite growth of alkali metals during their plating/stripping process will lead to low Coulombic efficiencies, a short lifespan and huge volume expansion, eventually hindering their practical commercialization. To resolve this issue, a very effective approach is engineering the anodes on structured current collectors. This review summarizes the development of the alkali metal batteries and discusses the recent advances in rational design of anode current collectors. First, the challenges and strategies of suppressing alkali-metal dendrite growth are presented. Then the special attention is paid to the novel current collector design for dendrite-free alkali metal anodes. Finally, we give conclusions and perspective on the current challenges and future research directions toward advanced anode current collectors for alkali metal batteries.     

Zeolite NaY-mediated oxidation of dyes with H2O2: unique heterogeneous non-transition metal center cleavage of H2O2 under visible light irradiation

This study investigated the visible-light catalysis mediated by zeolite NaY on the oxidation of dyes with H₂O₂. The results demonstrated that zeolite NaY acts as a sink for the electron from the photo-excited dye in the heterogeneous catalysis. Furthermore, the electron can effectively activate H₂O₂ to produce ^·OH radical that is a powerful oxidant for the oxidation of dye at room temperature. The effects of the framework topology, Si/Al ratio, and exchangeable cation of the zeolite on the oxidation of various dyes were also shown.     

X射线线扫描安全检查设备实时信号处理

针对X射线在成像过程中存在的非均匀性，利用两点校正法设计了用于X射线安全检查设备的增益和偏移补偿电路；完成了线扫描X射线安全检查设备的数据信号处理硬件模块，给出了电路结构框图；电路采用DSP＋CPLD的结构，在模拟部分和数字部分两次校正，得到了校正前后的处理结果，实现了工程应用。     

全自动电脑横机控制系统的设计

介绍了一种全自动电脑横机控制系统的新型分层体系设计.在该体系中,花型准备系统是基于Windows的开放式编程系统,通过编译自动生成编织指令数据文件,提供了独有的可扩充布纹库.下位NC硬件控制系统无需操作系统支持,便可完成对整个编织过程的实时监控,故障诊断,修改编织参数及测试执行部件等功能.新型的分层体系实现了上、下位机的功能独立,并保持了良好的人机交互界面和便捷的操作性,真正实现了全自动和智能化设计.     

Analysis and Design for a New ZVS DC–DC Converter With Active Clamping

A new zero voltage switching (ZVS) boost converter is presented in this paper. By using an auxiliary switch and a capacitor, ZVS for all switches is achieved with an auxiliary winding in one magnetic core. A small diode is added to eliminate the voltage ringing across the main rectifier diode. This clamping technique can also be utilized in other dc-dc converters, and a family of new ZVS dc-dc converter is derived. A prototype (500 W/193 kHz) is made to verify the theoretical analysis. The efficiency is higher than 94% at 90-V input at full load     

具有应变沟道及EOT 1.2nm高性能栅长22nm CMOS器件

深入研究了亚30nm CMOS关键工艺技术,特别是提出了一种新的低成本的提高空穴迁移率的技术--Ge预非晶化S/D延伸区诱生沟道应变技术,它使栅长90nm pMOS空穴有效迁移率在0.6MV/cm电场下提高32%.而且空穴有效迁移率的改善,随器件特征尺寸缩小而增强.利用零阶劳厄线衍射的大角度会聚束电子衍射分析表明,在沟道区相应的压应变为-3.6%.在集成技术优化的基础上,研制成功了高性能栅长22nm应变沟道CMOS器件及栅长27nm CMOS 32分频器电路(其中分别嵌入了57级/201级环形振荡器),EOT为1.2nm,具有Ni自对准硅化物.     

1mm SiC多指栅微波功率器件

研制了4H-SiC MESFET 1mm多栅器件.通过对SiC关键工艺技术进行研究,设计出初步可行的工艺流程,并且制作出单栅宽100μm,总栅宽1mm,栅长0.8μm的n沟道4H-SiC MESFET,其微波特性测试结果为:在2GHz,Vds=30V时,最大输出功率为1.14W,相应增益为4.58dB,功率附加效率为19%,漏极效率为28.7%.     

智能手机中的SIM卡密码管理

随着移动多媒体时代的到来,拥有强大娱乐商务功能的智能手机越来越受到消费者的青睐。文中简要介绍一种新的智能手机平台Qtopia、Qtopia中独特的信号与槽机制、SIM(用户识别模块)卡中密码的种类以及Qtopia如何采用AT指令来管理SIM卡密码,并阐述了实际智能手机项目中SIM卡密码管理程序的实现思路。