Dynamic mechanism of epileptic seizures generation and propagation after ischemic stroke

Nonlinear Dynamics - Epilepsy is the second largest neurological disease which seriously threatens human life and health. The one important reason of inducing epileptic seizures is ischemic stroke...     

n维有限射影空间上d~e——析取矩阵的新构作

利用n维有限射影空间上的一些性质,构作了组合群验的数学模型de-析取矩阵,并研究了它的参数和Hamming距离.     

应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.     

一种家用手持式红外偏振光治疗仪的设计与实现

红外偏振光治疗仪是一种将红外技术与电子技术应用到医学领域的康复理疗设备,主要用于软组织损伤和慢性疼痛的康复治疗,已在医院得到了推广使用。然而,现有医院使用的台式治疗仪由于体积大、售价高等特点,不方便居家使用。为了开发体积小、售价低、家庭可用的红外偏振光治疗仪,满足家用市场的潜在需求,本文提出了一种新的便携手持式红外偏振光治疗仪,并开发了该智能控制系统。本文首先介绍了一种新的家用手持式治疗仪应具备的特点和关键技术指标,在此基础上设计了手持式治疗仪的硬件总体方案和软件架构,简要介绍了该治疗仪的一些关键技术,最终实现了治疗仪样机的研制。为了验证该样机的性能,本文通过大量的测试,结果表明,研制的手持式红外偏振光治疗仪在关键参数指标上达到了医院同类产品的水平,能够很好地满足家用的需求,具有良好的市场前景。     

A Preamble Re-utilizing Access Scheme for Machine-Type Communications with Optimal Access Class Barring

Wireless Personal Communications - The existing long term evolution networks originally designed for human-to-human communications are hard to tackle numerous and bursty random access requests from...     

零维到三维结构中三核铜自旋阻挫簇单元的磁构关系和反对称交换

量子自旋液体是最近几年刚被人们证实除铁磁体、反铁磁体之外的第三种磁性类型,因其有望解释高温超导的运行机制、改变计算机硬盘信息存储方式而在物理、材料等领域备受关注。自旋阻挫作为量子自旋液体的最小单元可能是解开量子自旋液体诸多问题的钥匙,所以在磁学、电学研究领域再一次成为人们研究的热点。基于文献报道的三核铜配合物[Cu3(μ3-OH)(μ-OPz)3(NO3)2(H2O)2]·CH3OH(1),我们合成了三维金属有机框架配合物{[Ag(HOPz)Cu3(μ3-OH)(NO3)3(OPz)2Ag(NO3)]·6H2O}n(2)(HOPz=甲基(2-吡嗪基)酮肟),并从自旋阻挫的角度对二者磁性质进行对比和详细分析。磁化率数据表明自旋间有很强的反铁磁相互作用和反对称交换。通过包含各向同性和反对称交换的哈密顿算符对两者磁学数据进行拟合并研究其磁构关系,所获最佳拟合参数为:配合物1:Jav=-426 cm^-1,g⊥=1.83,g∥=2.00;配合物2:Jav=-401 cm^-1,g⊥=1.85,g∥=2.00。     

DCS分布式冷却系统在通信基站的应用研究

针对基站柜式空调耗电量大的问题,创造性地使用基站分布式冷却的方式,达到精确送风,节能高效的目的.在应用实践中检验了分布式冷却系统实际节能量和应用效果,总结出分布式冷却系统应用场景和范围,为更大范围推广应用DCS分布式冷却系统提供实践依据.     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.