纳米晶软磁合金中的结构对技术磁性的影响——Ⅱ.磁弹耦合作用

对磁弹耦合在决定纳米晶软磁合金宏观磁性中的作用进行了探讨,高场磁化规律以及正电子湮没测量表明:对Fe_73.5Cu₁Nb₃Si_13.5B₉合金,准位错偶极子造成的应力场对畴壁的钉扎效应是造成纳米晶软磁合金矫顽力的重要原因;结构缺陷造成的应力场与磁致伸缩的耦合作用对纳米晶软磁性能有重要的影响.在结构各向异性和磁弹耦合能共同作用下可解释纳米晶合金表现出最佳软磁性能.     

Low-Temperature Magnetic Properties of Co Antidot Array

Cobalt antidot arrays with different thicknesses are fabricated by rf magnetron sputtering onto porous alumina substrates. Scanning electron microscopy and grazing incidence x-ray diffraction are employed to characterize the morphology and crystal structure of the antidot array, respectively. The temperature dependence of magnetic properties shows that in the temperature range 5K--300K, coercivity and squareness increase firstly, reach their maximum values, then decrease. The anomalous temperature dependences of coercivity and squareness are discussed by considering the pinning effect of the antidot and the magnetocrystalline anisotropy.     

广义分解定理与两个不等式

本文给出了Banach空间广义分解定理的一个初等证明,并利用它来证明两个对称不等式.这是首次在Banach空间获得这样的不等式.     

Investigation of Scale Exponents of Complete and Incomplete Aggregation-Annihilation Processes

The complete and incomplete aggregation-annihilation processes are investigated with the method of generating function, and the scale exponents are obtained exactly. We find that the scale exponents of incomplete aggregation-annihilation process are different from the previous exponents obtained by different methods. The time dependence of the total number of clusters and the total mass of clusters are analytically obtained.     

CSP工艺生产微钛钢中的碳氮化物析出相

在钢中添加一定量的Ti可以提高钢的力学性能。细小的TiN弥散粒子可起到一些有利作用。例如，TiN粒子可以细化钢的铸态组织；减少有害夹杂物的析出；提高奥氏体粗化温度；防止形成过大的奥氏体晶粒等。     

Design and Manufacture of GeSi/Si Superlattice Nanocrystalline Photodetector

According to Maxwell＇s theory, the optical transmission characteristics in GeSi/Si superlattice nanocrystalline layer have been analyzed and calculated. The calculated result shows that when the total thickness L is 340 nm, the single mode lightwave can be transmitted only at periodic number M≥15.5. In addition, at the direction of transmission, when the transmission distance is larger than 500 μm, the lightwave intensity is decreased greatly. Based on the above parameters, the design and manufacture of GeSi/Si superlattice nanocrystalline photodetector are carried out.     

碳纳米管及其批量制备研究进展

从碳纳米管的优异性能和应用出发,综述了碳纳米管的制备方法以及我国目前在碳纳米管研究中面临的问题;分析了碳纳米管产业化对的我国纳米技术产业化发展的积极意义,特别介绍了清华-南风纳米粉体产业化工程中心开发的、具有我国自主知识产权的纳米聚团流态化技术。     

Effects of Substrate Temperature on Helium Content and Microstructure of Nanocrystalline Titanium Films

Helium-charged nanocrystalline titanium films have been deposited by HeAr magnetron co-sputtering. The effects of substrate temperature on the helium content and microstructure of the nanocrystalline titanium films have been studied. The results indicate that helium atoms with a high concentration are evenly incorporated in the deposited titanium films. When the substrate temperature increases from 60℃ to 350℃ while the other deposition＇parameters are fixed, the helium content decreases gradually from 38.6 at.% to 9.2at.%, which proves that nanocrystalline Ti films have a great helium storage capacity. The 20 angle of the Bragg peak of （002） crystal planes of the He-charged Ti film shifts to a lower angle and that of （100） crystal plane is unchanged as compared with that of the pure Ti film, which indicates that the lattice parameter c increases and a keeps at the primitive value. The grain refining and helium damage result in the diffraction peak broadening.     

Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.     

存储媒体的媒体内同步反馈控制算法

本文提出了一种存储媒体的媒体内同步反馈控制算法，该方案是建立在缓冲区占用率控制基础上，通过周期性地检查缓冲区的占用情况来检测失步，并将其反馈给发送方，由发送方对发送帧速率进行调整。文章给出了接收方所需缓冲区的设计准则及发送帧速率的调整方法，并分析了算法中各参数对同步性能的影响。实验表明该方案能够处理由于网络传输时延特性变化引起的失步，与其它反馈控制方案相比具有更低的数据丢弃率，从而使接收端播放平滑连续，具有良好的视频播放质量。