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151.
L. V. Kuzmin V. A. Morozov S. O. Starkov B. A. Khadzhi 《Journal of Communications Technology and Electronics》2006,51(11):1283-1289
The models of indoor multipath propagation of wideband and ultrawideband (UWB) signals are considered. Application of these models is recommended by an IEEE working group. In the framework of one of the models corresponding to the line-of-sight conditions, the algorithms for reception of UWB chaotic signals in the presence of reflection from multiple surfaces (echo signals) are proposed and analyzed. The efficiency of reception techniques is estimated from the viewpoint of the error probabilities. Limitations caused by the specific properties of echo signals are revealed, and the methods for improvement of reception quality are discussed. 相似文献
152.
Marks L D Ciston J Deng B Rondinelli J 《电子显微学报》2006,25(B08):1-2
Many areas of structure analysis have focused on finding the locations of the atoms. If, instead of the atoms, we knew the positions of the electrons we would in fact know much more, and in most respects knowing where the nuclei are is not important. There is a long history of measurements using precise electron diffraction or X-ray diffraction of the average charge density in materials, but extending beyond to local charge density is, as yet, an unexplored area. 相似文献
153.
文章介绍了在windows2000环境下通过编写WDM(Windows Driver Model)设备驱动程序实现实时数据采集和控制的一种方法。采用研华数据采集卡PCL818L产生中断信号.通过编写WDM驱动程序实现了在windows2000环境下转台的位置控制。并在实验中调试通过。实验结果表明:在采样频率为1KHz的情况下。控制系统很好实现了输出对输入的跟踪,证明了采用方法的正确性。该方法解决了windows2000环境下的实时性问题,为在windows环境下实时控制系统的实现提供了有益的尝试。 相似文献
154.
155.
在数据采集中采用带通采样,可大大降低采样率,但系统中的抗混叠滤波器会造成相位的非线性。采用对滤波后的信号进行带通采样,然后再用FRR滤波器校正相位的非线性,从而不失真地还原原信号,最后在Matlab中进行仿真,验证了该方法的有效性。 相似文献
156.
发布订阅(Pub/Sub)中间件以发布/订阅的通信模式实现分布式系统中的各参与者之间的交互,它的松耦合、异步、组播等特点,使它能够很好地适应移动计算动态变化的网络环境.分析Pub/Sub中间件系统的框架模型和集中式、分布式两种结构,并将其扩展到移动计算环境. 相似文献
157.
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159.
L. Sheeney‐Haj‐Ichia S. Pogorelova Y. Gofer I. Willner 《Advanced functional materials》2004,14(5):416-424
Three different configurations of Au‐nanoparticle/CdS‐nanoparticle arrays are organized on Au/quartz electrodes for enhanced photocurrent generation. In one configuration, Au‐nanoparticles are covalently linked to the electrode and the CdS‐nanoparticles are covalently linked to the bare Au‐nanoparticle assembly. The resulting photocurrent, φ = 7.5 %, is ca. 9‐fold higher than the photocurrent originating from a CdS‐nanoparticle layer that lacks the Au‐nanoparticles, φ = 0.8 %. The enhanced photocurrent in the Au/CdS nanoparticle array is attributed to effective charge separation of the electron–hole pair by the injection of conduction‐band electrons from the CdS‐ to the Au‐nanoparticles. Two other configurations involving electrostatically stabilized bipyridinium‐crosslinked Au/CdS or CdS/Au nanoparticle arrays were assembled on the Au/quartz crystal. The photocurrent quantum yields in the two systems are φ = 10 % and φ = 5 %, respectively. The photocurrents in control systems that include electrostatically bridged Au/CdS or CdS/Au nanoparticles by oligocationic units that lack electron‐acceptor units are substantially lower than the values observed in the analogous bipyridinium‐bridged systems. The enhanced photocurrents in the bipyridinium‐crosslinked systems is attributed to the stepwise electron transfer of conduction‐band electrons to the Au‐nanoparticles by the bipyridinium relay bridge, a process that stabilizes the electron–hole pair against recombination and leads to effective charge separation. 相似文献
160.
Yang C.W. Fang Y.K. Lin C.S. Tsair Y.S. Chen S.M. Wang W.D. Wang M.F. Cheng J.Y. Chen C.H. Yao L.G. Chen S.C. Liang M.S. 《Electronics letters》2003,39(21):1499-1501
A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V. 相似文献