短波红外昼光恒星成像光学系统设计

由于太阳光散射在地球大气中产生的背景辐射使得可见光传感器极易饱和,导致在白天测星很困难。通过分析可知,红外传感器在白天测星的概率比可见光传感器要高得多。针对红外测星特点,介绍了一种短波红外光学系统的设计方法,给出了一种工作波长为2．0～2．5μm,相对孔径为1．4,焦距为140mm的镜头设计过程。该镜头结构紧凑,用材特殊,能适应-50～70℃的环境要求．实现全天候测星。     

σ -局部有限集族与度量空间的σ -映象

利用σ-映射建立了具有σ-局部有限cs-网、σ-局部有限cs*-网、σ-局部有限序列邻域网、σ-局部有限序列开网的空间与度量空间确定的σ-映象之间的联系.     

一种可用于化学传感的对角对称光子晶体光纤设计

本文提出了一种可用于化学传感的具有高双折射、低损耗的光子晶体光纤,并系统地分析了空气孔参数对光纤光学特性的影响.研究表明,最优结构的光纤在典型波长1.55μm时对水、乙醇和苯的相对灵敏度分别可达56.3％、59.9％和62.5％,相比现有光子晶体光纤分别提高1.05～6.25倍、1.05～4.99倍和1.03～4.63...     

四-(4-氨基苯)乙烯的合成及溶剂/pH双重响应聚集发光行为

以二苯甲酮为原料,经McMurry、硝化、还原反应合成了化合物3,总收率为59%,其化学结构经¹H NMR和¹³C NMR确证。进一步采用紫外可见吸收光谱和荧光光谱对3在溶液中的聚集发光行为进行研究,结果表明：化合物3具有可逆的溶剂/pH双重响应聚集诱导发光(AIE)特性,主要是由于其在溶液中的聚集状态发生变化。      

新型Zn(Ⅱ)和Co(Ⅱ)配合物的合成、表征及性能

以4,4'-联苯二羧酸（H₂BPDC）和4,4'-联吡啶（BPY）作为混合有机配体,Zn(II)或Co(II)作为中心金属离子,通过溶剂热法合成了两种新型配合物[Zn₃(bpdc)₃bpy]_n（1, CCDC: 1843824）和[Co₃(bpdc)₃bpy]_n（2, CCDC: 1887332）,其结构和性能经X-射线单晶衍射、红外光谱（FT-IR）、粉末X-射线衍射（PXRD）、热重分析（TG）和N₂吸附/脱附测试表征。结果表明:两种配合物具有相似的三维孔状结构,由Zn(II)或Co(II)以四配位和六配位呈现四面体和八面体空间几何构型;1和2均具有较好的热稳定性;在77 K,氮气吸附条件下,配合物1的BET比表面积为5.584 m²/g,吸附总孔体积为0.024 cm³/g,吸附平均孔径为13.932 nm。      

高压煤粉密相气力输送实验研究

在输送压力可达4 MPa的气力输送实验台上,进行不同平均粒径煤粉的密相输送实验。研究总输送差压、发送压力对煤粉的质量流量、固气比等输送参数的影响。结果表明;煤粉质量流量随总输送差压的增加而增加;相同总输送差压下,煤粉平均粒径越大,煤粉质量流量越低;煤粉质量流量随发送压力的增加而增加。研究表明,相同煤粉质量流量下固气比随着表观气速的增加而降低;相同表观气速下,煤粉质量流量的增加会导致固气比的增加。     

Three-Dimensional Quantum State Transferring Between Two Remote Atoms by Adiabatic Passage under Dissipation

Recently, Zhou et al. [Phys. Rev. A 79 （2009） 044304] proposed a scheme for transferring three-dimensional quantum states between remote atomic qubits confined in cavities connected by fibers through adiabatic passage. In order to avoid the decoherence due to spontaneous emission, Zhou et al. utilized the large detuning atom-field interaction. In the present paper, we discuss the influence of dissipation on the scheme in both the resonant atom-field interaction case and the large detuning case. We numerically analyze the success probability and the transferring fidelity. It is shown that the resonant case is a preferable choice for the technique of the stimulated Raman adiabatic passage （STIRAP） due to the shorter operation time and the smaller probability of dissipation.     

Growth and Characterization of CIS Thin Films Prepared by Ion Beam Sputtering Deposition

Copper indium diselenide （CuInSe2） thin films were prepared by ion beam sputtering Cu, In and Se targets continuously on BK7 glass substrates and the three-layer film was then annealed in the same vacuum chamber. X-ray diffraction shows that the CuInSe2 thin films have a single chalcopyrite structure with preferential （112） orientation. Scanning electron microscopy reveals that the CIS thin films consist of uniform and densely packed grain clusters. Energy dispersive x-ray spectroscopy demonstrates that the elemental composition of CIS films approaches the stochiometric composition ratios of 1：1：2. Raman measurement shows that the main peak is at about 174cm^-1 and this peak is identified as the A1 vibrational mode from chaicopyrite ordered CulnSe2. Optical transmission and absorption spectroscopy measurement reveal an energy band gap of about 1.05 eV and an absorption coefficient of 10^5 cm^-1. The film resistivity is about 0.01 Ωcm.     

Composition-Dependent Characterization of Sb2Te3 Thin Films Prepared by Ion Beam Sputtering Deposition

The optimization of ion beam sputtering deposition process for Sb2 Te3 thin films deposited on BK7 glass substrates is reported. The influence of composition ratio on the thermoelectric properties is investigated. X-ray diffraction shows that the major diffraction peaks of the films match with those of Sb2 Te3. Hall effect and Seebeck coefficient measurement reveal that all the samples are of p-type. The Sb2 Te3 thin films exhibit the Seebeck coefficient of 190μVk^-1 and the electrical conductivity of 1.1 × 10^3 Scm^-1 when the atomic ratio of Sb to Te is 0.65. Carrier concentration and motility of the films increase with the increasing atomic ratio of Sb to Te. The Sb2 Tea film with a maximum power factor of 2.26×10^-3 Win^-1K^-2 is achieved when annealed at 400℃. Raman measurement shows that the main peaks are at about 120 cm^-1, 252 cm^-1 and 450 cm^-1, in agreement with those of V-VI compound semiconductors.     

光镊系统的组建及光阱效应的观察

光镊是美国科学家Arthur Ashkin于1986年发明的,现被用来操控微小粒子和作为微小力的传感器.随着光镊技术的不断发展,光镊在生物大分子的操控和生物大分子生命过程中动力学研究方面发挥着巨大作用.本文介绍了光镊的工作原理,以及如何利用实验室现有条件,以较低成本搭建了一个简化的光镊系统,并观察了光镊对几种微小粒子的捕捉情况,证实了光阱有一定的作用范围,且其捕获能力随微粒尺寸增大而减小.