Shape transition from InAs quantum dash to quantum dot on InP(3 1 1)A

We report on the shape transition from InAs quantum dashes to quantum dots (QDs) on lattice-matched GaInAsP on InP(3 1 1)A substrates. InAs quantum dashes develop during chemical-beam epitaxy of 3.2 monolayers InAs, which transform into round InAs QDs by introducing a growth interruption without arsenic flux after InAs deposition. The shape transition is solely attributed to surface properties, i.e., increase of the surface energy and symmetry under arsenic deficient conditions. The round QD shape is maintained during subsequent GaInAsP overgrowth because the reversed shape transition from dot to dash is kinetically hindered by the decreased ad-atom diffusion under arsenic flux.     

An experimental study of dynamic tensile properties of glass fiber at low-temperatures

Tensile impact experiments of EC8.0−24×7 glass fiber bundles at different low temperaturesT(14°C, −40°C and −10°C) and strain rates ɛ were carried out, and complete stress-strain curves were obtained. Within the range of the experiment temperatures and strain rates, it is found that the initial modulusE, the ultimate strength σ_max and the unstable strain ɛ _b of the glass fiber bundles all increase with ɛ at an identicalT. At an identical ɛ, with the decrease ofT, E and σ_max increase; but ɛ _b increases when 10°C>T>−40°C and decreases when −40°C>T>−100°C. The strain-rate- and temperature-dependent bimodal Weibull statistical constitutive theory was adopted for the statistical analysis of the experimental results, and the Weibull parameters of single fiber were obtained. The results show that the bimodal Weibull distribution function is suitable to represent the strength distribution of the glass fiber at low temperature and different strain rates. The differences in the mechanical properties between EC8.0−24×7 and EC5.5−12 ×14 glass fiber bundles were also discussed. Project supported by the National Natural Science Foundation of China (No. 19772058).     

函数模拟法求解锥形模超塑挤压的力学场——超塑挤压解析理论之一

本文首次用模拟位移函数的方法,给出锥形模超塑挤压力学场的解析式以及应变、应变速率和应力的约束方程。由于实验选用的是典型超塑性合金ZnAl₅,所以结果有相当的包络性。即使对于非典型超塑性材料,这种方法亦有普遍意义。     

The Exact Solutions of Some (2 + 1)-Dimensional Integrable Systems

The equivalence of three (2 1)-dimensional soliton equations is proved, and the quite generalsolutionswitha some arbitrary functions of x, t and y respectively are obtained. By selecting the arbitrary functions, many specialtypes of the localized excitations like the solitoff solitons, multi-dromion solutions, lump, and multi-ring soliton solutionsare obtained.     

Analytic Solution of Charge Density of Single Wall Carbon Nanotube under Conditions of Field Electron Emission

We derive the analytic solution of induced electrostatic potential along single wall carbon nanotubes. Under the hypothesis of constant density of states in the charge-neutral level, we are able to obtain the linear density of excess charge in an external field parallel to the tube axis.     

Chemical analysis and distribution investigation of trace elements in indium matrix by spark source mass spectrometry

Summary High-purity indium was analysed by spark source mass spectrometry, using electrical and photoplate detection. For the calibration of the differences in elemental sensitivity, a standard sample was prepared in which 10 impurities were determined by graphite furnace atomic absorption spectrometry. In this way accuracies of less than 40% were obtained for relatively homogeneous elements at ppm and sub-ppm level. About 40 elements could be determined with detection limits of 10 to 30 ppb. Two pattern recognition methods, principal component analysis and clustering analysis, were applied to obtain information on trace element distribution, which indicated that a number of elements were strongly spatially correlated in the analysed sample.

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Chemische Analyse und Verteilungsbestimmung von Spurenelementen in Indium-Matrix durch Funkenquellen-Massenspektrometrie

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On leave from: Department of Chemistry, Nanjing Normal University, Nanjing, People's Republic of China     

硅中铜与电子辐照缺陷的相互作用

本文研究了FZ与CZ硅中铜与电子辐照缺陷的相互作用.实验表明,这种作用使扩铜并经电子辐照的n型FZ硅出现两个未经报道的新的深中心,E(0.043)和E(0.396).前者只存在于FZ硅而不存在于CZ硅.后者在扩铜并经电子辐照的n型FZ和CZ硅中都存在.电子辐照再加适当温度的热处理还可电激活硅中的铜,另外,铜的存在还使硅中双空位的退火温度显著地降低.种种实验表明,在硅中与铜有关的六个主要能级分别对应于六种不同结构的深中心,在这些深中心之中既包含铜又包含点缺陷.其中E(0.043)很可能是铜与间隙硅原子的络合物,而E(0.167)及H(0.411)则很可能是铜与空位的不同形态的络合物.     

催化动力学光度法测定痕量铝

痕量铝在硝酸介质中能催化加速过氧化氢和高碘酸钾与二甲苯胺兰FF之间的褪色反应。研究了反应的最佳实验条件,建立了测定痕量铝的新方法。方法检出限为6.1×10-10gAl3+/mL,检测范围为0-1.0μgAl3+/25mL。本方法具有高灵敏度,选择性较好,操作简便,快速的特点。用以测定水样中的痕量铝,获得满意结果。