Characteristics of Schottky Barrier Junction Based on Hexagonal Microtube ZnO

Hexagonal microtube ZnO was firstly grown on single crystal p-Si (111) substrates by hydrothermal method, and fabricated Ag/n-ZnO and Au/n-ZnO Schottky junction. Schottky effective barrier heights were calculated by I-V measurement. It is confirmed that the presence of a large amount of surface states related possibly to lattice imperfections existed near the surface leads to the pinning of the surface Fermi level at 0.35 eV below the conduction-band edge. Then the fabricated Schottky barrier junctions are evaluated for their use as UV photodetectors.     

Parasitic Bipolar Junction Transistors in a Floating-Gate MOSFET for Fluorescence Detection

In this letter, we examined whether the parasitic bipolar junction transistors (BJTs) in the MOSFET fabricated by the standard CMOS process can play a role as a fluorescence detector. To suppress the action of two vertical parasitic BJTs, the gate and n-well were tied in the parasitic BJTs, and the body node was connected to the drain. The proposed device was compared with the inherent and the parasitic diodes in the MOSFET. It had 100 times higher photocurrents than the diodes in the MOSFET. In addition, it was applied for the detection of the fluorescent signal, and could detect near 10 nM of Alexa 546. Therefore, CMOS-process-compatible parasitic BJTs can be used as a photodetector in an integrated fluorescence detector.     

A novel bidirectional CMOS transceiver for chip-to-chip optical interconnects

A novel bidirectional complementary metal-oxide-semiconductor (CMOS) transceiver for chip-to-chip optical interconnects operating at 2.5 Gb/s is proposed, which shares the common block of a receiver and a transmitter on a single chip. The share of the common block of two circuits makes it possible to save 55% or 20% of power dissipation, depending on the operating mode. The chip in 0.18-/spl mu/m CMOS technology occupies an area of 0.82/spl times/0.82 mm/sup 2/, 70% of the total area of a typical unshared transceiver chip. The transmitting and receiving modes of operation show -3-dB bandwidths of 2.2 and 2.4 GHz and electrical isolations of -28 and -40 dB, respectively.     

Synthesis and Crystal Structure of a Ternary Complex: [Ni(phen)2(pmal)]·8H2O

A new ternary complex [Ni(phen)(pmal)]·8H2O (phen = 1,10-phenanthroline,pmal2- = phenethyl malonic acid) has been synthesized by the reaction of nickel acetate, phen and phenethyl malonic acid. Elemental analysis, IR spectra and X-ray single-crystal diffraction were carried out to determine the composition and crystal structure. Crystal data for this complex: triclinic system, space group P1, a = 10.387(5), b = 13.112(6), c = 14.229(6) (A), α = 76.176(7), β =83.778(8), y = 71.770(6)°, C35H42N4O12Ni, Mr= 769.44, Z = 2, F(000) = 808, V = 1786.1 (A)3, Dc =1.431 g/cm3, μ = 0.612 mm-1, the final R = 0.0653 and wR = 0.1033 for 9379 (Rint = 0.0244)independent reflections and 4730 observed reflections (I ＞ 2σ(I)). Structural analysis shows that the coordination geometry of Ni(Ⅱ) is a distorted octahedron. A novel two-dimensional structure is constructed from (H2O)4 and (H2O)12 water clusters, and the complex forms a 3-D network supramolecular structure by hydrogen bonds and π-π stacking of neighboring phens.     

在ILC上用γγ→Z过程检验非对易时空标度

讨论关于在ILC用γγ到Z过程检验非对易时空能标(原文发在hep-ph/0604115). 在通常时空量子场论中, 由杨氏定理可知一个自旋为1的粒子不可能衰变为两个光子. 但在非对易时空中此过程是允许的. 因此这个过程能作为检验非对易时空的工具. ILC的光子对撞模式能实现这个过程. 如果总亮度能达到500fb^－1, 我们证明对Gamma (Z to gamma gamma)宽度的测量精度将比现有限制(<5.2×10^－5GeV)好3—4个数量级. 对非对易时空能标的检测可高达几个TeV.     

ZST微波陶瓷在介质振荡器上的应用研究

用传统固相法制备ZST(氧化锆-氧化锡-氧化钛)系微波陶瓷,研究了ZST系微波陶瓷的组成对介电性能的影响。通过X-射线衍射(XRD)和HP8714ET网络分析仪对其晶体结构和微波介电性能进行研究,实验结果表明:少量掺Bi2O3的ZST系陶瓷材料可把烧结温度降低至1 260℃,微波介电性能较好;掺入量大于2%(质量分数)时,ZST系微波陶瓷在晶界偏析形成了Bi2Ti2O7新相,微波性能下降。用微波介电性能较好的ZST系陶瓷制成的介质振荡器进行测试,其电性能满足设计要求。     

马尔可夫链在产品可靠性预测中的应用

事物未来的状态仅仅受事物现状的影响，而与过去的状态无关，也就是具有马尔可夫性。用马尔可夫链的理论与方法，对具有马尔可夫性产品的可靠性进行预测，既为产品的可靠性设计和产品售后服务的经济性分析提供了参考，也为马尔可夫模型的实际应用拓广了范围。通过实例说明在数学软件的帮助下这种预测方法的简单可行性。     

高密度氩气的原子间相互作用与状态方程

本文从高密度气体的原子间相互作用出发进行思考,在修改范德瓦耳方程的基础上,提出了一种新的适用于高密度气体的状态方程,并用以对氩气临界区的等温压缩线进行计算,结果与实验值很符合.     

In situ Synthesis of Oligonucleotides on Plasma Treated Polypropylene Microporous Membrane

Polypropylene microporous membranes were treated with plasma in a mixture of N2 and H2 (1:2 in volume). Attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR), X-ray photoelectron spectroscopy (XPS) and ultra-violet (UV) spectra demonstrated the success of grafting amino groups. The density of the polar amino groups on the membrane surface is about 0.59 μmol/cm^2. The as-treated membranes were successively applied to the in situ synthesis of oligonucleotides and an average coupling yield was more than 98%. The surface feature of the treated membrane is suggested to be responsible for its advantage over a glass slide.     

进一步完善新设备进网管理

国家对电信终端设备、无线电通信设备和涉及网间互联的设备实行进网许可制度。信息产业部文件《电信新设备进网试验管理暂行办法》规定：电信新设备是指应实行进网许可制度但尚无正式国家标准、行业标准的，或未列入《第一批实行进网许可制度的电信设备目录》的电信设备。依据《电信设备进网管理办法》第13条规定，电信新设备在符合国家产业政策和不影响网络安全畅通的条件下，准予进网试验，由信息产业部颁发进网试用批文。