SiGe／Si多量子阱中垂直方向红外吸收及共振色散效应

用垂直入射的中红外光束调制非掺杂SiGe/Si量子阱中光致子带间吸收，氩离子激光器作为子带间跃迁的光泵浦源在阱中产生载流子，红外调制光谱用步进式傅立叶变换光谱仪记录，实验中观察到明显的层间干涉效应与子带间跃迁有关的色散效应，理论和实验分析认为样品折射率变化造成的位相调制可以补偿吸收所造成的幅度调制。     

O′-β′复相Sialon陶瓷中相组成的控制

用Si₃N₄,SiO₂和Al₂O_?作原料,以Y₂O_?为添加剂,研究了O’-β’所在的四个相容性区中组成,于1400—1800℃之间,O’和β’的形成动力学。O’于1400℃开始生成,1600℃达到最大形成量。高于1600℃,O’减少乃至消失。研究发现,O’的这种不稳定性,并非自身热分解的结果。Al含量的增加,液相出现和β’的形成,才是导致O’-Sialon溶解而消失的原因。 此外,认为Si₃N₄-O’(x=0.3)-Y₂Si₂O₇-YAG相容性区,是在制备具有合理的O’-β’平衡相组成的复相陶瓷时,可供实际选用的组成区。     

《光谱学与光谱分析》2007年征订启事

The authors achieved the temporal coherent control in an Er^3＋ doped telluride glass, one kind of disordered solids. The upconversion at 670 nm was modulated and the dephasing time was simulated as 300 fs. Moreover, the photon echo signal gave the dephasing time due to the phonon interaction. The agreement between the two data indicates that the interaction between the wavepacket and the phonon leads to the fast disappearance of wavepackets interference, which is helpful for the tech- nique to be applied to the disordered solids.     

氦原子与非对称替代氢分子碰撞(E=0.3eV)角分布计算

用密耦方法计算了非对称同位素替代分子与氦原子碰撞(He-HD,HT,DT)转动激发,当入射能量E=0.3 eV时,得到了上述碰撞体系的微分散射截面或角分布.基于上述理论计算,讨论了原子与双原子分子碰撞的同位素效应.     

Scanning tunnelling microscope studies of growth of RuO2（110） thin layer on Ru（0001）

This paper reports that the growth of RuO_x(110) thin layer growth on Ru(0001) has been investigated by means of scanning tunnelling microscope (STM). The STM images showed a domain structure with three rotational domains of RuO_x(110) rotated by an angle of 120℃. The as-grown RuO_x(110) thin layer is expanded from the bulk-truncated RuO_x(110) due to the large mismatch between RuO_x(110) and the Ru(0001) substrate. The results also indicate that growth of RuO_x(110) thin layer on the Ru(0001) substrate by oxidation tends first to formation of the Ru-O (oxygen) chains in the [001] direction of RuO_x(110).     

采用多元化的教学手段,提高物理人才的综合素质——南开大学物理学基础科学人才培养基地建设经验介绍

介绍了南开大学国家物理学基础科学研究人才培养基地在十多年的建设中,通过多元化的教学手段提高学生的学习自主性,通过加强科研训练提高物理人才综合素质的经验和取得的成果.     

The effects of doubly excited states on ionization balance

The effects of highly doubly excited states on ionization balance are investigated. In the calculation, A Collisional-Radiative model in Detailed-Configuration-Accounting (DCA) is applied to population calculations for NLTE plasmas. Configuration-averaged rate coefficients that needed in the rate equations are obtained based on the first order perturbation theory. The Hatree-Fock-Slater self-consistent-field method is used to calculate the electron wave functions. The mean ionization stage of high-Z plasma Lu is presented. The comparison shows that the mean ionization stage increases more than 3 stages when doubly excited states 5l6l' and 5l5l' are not included in the population calculations.     

微波消解-氢化物发生-原子荧光光谱法测定7种中草药中砷

利用原子荧光光谱法测定7种驱虫类中草药中的砷.实验采用微波消解样品,以盐酸为测定介质,硫脲-抗坏血酸为预还原剂,硼氢化钾为氢化剂,用氢化物发生-原子荧光光谱法测定砷含量.砷含量在10-100ng/mL浓度范围内线性关系好(r2=0.9924).回收率为93.83%-110.94%之间.方法简便、快速、灵敏、准确,可用于中草药中砷的测定.     

半导体激光器光束准直系统的功率耦合效率

在长距离无线光通信中，接收点光功率密度与光束发散角平方呈反比关系，为了获得小的发散角和大的功率耦合效率，要求准直系统有较大的数值孔径(NA)，但数值孔径过大会增加像差，因此合理设计功率耦合效率与准直系统的数值孔径就非常重要。该文对半导体激光器光束准直系统中功率耦合效率进行了研究，给出了半导体激光器光束功率耦合效率与k(孔径半径与孔径处等效光束半径之比)的关系表达式，并结合激光器光束准直系统，给出了半导体激光器光束功率耦合效率与准直系统数值孔径的关系表达式。该研究结论对于半导体激光器光束准直系统设计具有参考作用。     

A New Type of Terahertz Waveguides

A new type of THz waveguides, which employs a solid polyethylene rod as the core and polyethylene tubes in a periodic array of square lattice as the cladding, is proposed. Optical properties of this new THz waveguide, especially in dispersion, confinement loss and single mode property, are investigated in detail with the plane wave expansion method and the beam propagation method. Numerical results demonstrate that the new THz waveguide can reach not only low dispersion but also low confinement loss at single mode propagation. Therefore, the square lattice structure is a better candidate as THz waveguides than the triangular ones.