基于点密集度的非线性流形学习算法

提出一种样本点密集度的非线性流形学习算法.该算法提出了一个有效的数据点密集参数,能够很好地对非均匀数据的低维嵌入进行约束,其嵌效结果明显优于LLE算法.在人工和人脸数据集上的实验结果表明,新算法产生了较好的嵌入及分类结果.     

水泥配料控制中控制算法的研究

配料是水泥生产过程的重要环节,在一些连续称量配料工艺过程中,以往大多通过控制每种物料的瞬时流量来满足工艺要求,但往往误差较大,给生产带来不良影响。为提高控制精度,提出了一种偏差加权累积量控制PID算法,并在水泥生料配料控制中进行了实施,实验结果表明该算法能有效地抑制和消除系统过量超调和不停振荡,且对于某些不要求每个瞬时值都控制给定值的量,该算法可以避免调节阀的频繁动作并大大提高调节品质。偏差加权累积的PID控制算法具有简单、方便、易于实现的特点,且在水泥生料配料控制中取得了理想的效果,有很好的推广前景。     

工艺条件对PTCR热敏陶瓷喷雾造粒粉体性能的影响

采用压力喷雾造粒的方式对BaTiO3系PTCR热敏陶瓷粉体进行喷雾造粒处理,研究了喷雾造粒过程中浆料组成和雾化条件对粉体性能的影响。研究结果表明：喷雾造粒过程中浆料粘度过高,雾化条件控制不当,都会使喷雾造粒粉体颗粒的团聚程度增加,影响粉体的松装密度和流动性,对生坯成型及材料烧结不利,考虑到料浆中粘合剂含量、固体物含量的综合影响,添加适量的分散剂可以降低料浆的粘度,控制适当的雾化压力,选用合适的喷雾直径与涡旋片组合可以获得理想的粉体。     

TiO2掺杂对低压ZnO压敏电阻性能的影响

研究了TiO2掺杂量及制备工艺对ZnO压敏电阻性能的影响。TiO2掺压超过一定量时,压敏场强就不再降低,而非线性系数却一直下降,漏流迅速增大,使性能劣化。因此,要控制TiO2掺杂量在适当范围内。粉料煅烧温度和烧成的高低也直接影响ZnO压敏电阻性能。     

硼硅玻璃掺杂对ZnO压敏电阻器电性能的影响

研究结果表明 ,硼硅玻璃料的掺入超过一定量时会使压敏电场上升。当玻璃料含量占初始配方总质量的 5 %时 ,压敏电场最小 ,非线性系数最小 ,漏电流最大 ;当玻璃料含量占 5 %～ 10 %时 ,随玻璃料掺入量的增加 ,非线性系数明显上升 ,漏电流迅速减小 ,压敏电场迅速上升。     

氯柱硼镁石在硼酸溶液中溶解转化的Raman光谱

利用Raman光谱对氯柱硼镁石在30 ℃时,4.5%的硼酸水溶液中溶解相转化过程进行了研究。研究结果表明相转化产物为库水硼镁石(2MgO·3B₂O₃·15H₂O)。根据Raman光谱位移对溶液中各种聚硼酸根B(OH)-₄,B₂O(OH)2-₆,B₃O₃(OH)-₄等阴离子的Raman峰进行了归属以及它们间的相互作用分别进行了讨论分析。提出了溶液中硼氧配阴离子的存在形式及其相互作用机理和我国青藏高原盐湖区库水硼镁石形成的地球化学成盐条件和机理。     

Synthesis and Crystal Structure of a New μ-Oxamide Trimeric Hetero-tetranuclear Complex

A novel oxamide-bridged trimeric tetranuclear complex 1 incorporating a macro- cyclic oxamide of formula {[(CuL)3Mn](ClO4)2}3 (macrocyclic oxamide L = 2,3-dioxo-5,6,14,15- dibenzo-1,4,8,12-tetraazacyclopentadeca-7,12-diene) was prepared and structurally characterized. The compound [(CuL)3Mn](ClO4)2 crystallizes in the trigonal system, space group with a = 22.434(17), b = 22.434(17), c = 18.82(2) (A), α = β = 90, γ = 120o, V = 8203(13) (A)3, Z = 6, Dc = 1.751g/cm3, μ(MoKα) = 1.557, F(000) = 4392, the final R = 0.083 and wR = 0.1727 for 9604 obser- ved reflections with I > 2σ(I). The single-crystal X-ray analysis shows that 1 is a trimeric complex. There are three similar constitutes, dissimilar conformations and asymmetrically independent 'building-block' [(CuL)3Mn] in one crystal cell of the title complex 1.     

A low magnetic field gyrotron—gyro-magnetron

A gyrotron device operating at a substantially reduced magnetic field is proposed. The operating beam voltage is moderately low and the waveguide circuit resembles the anode block of a conventional magnetron. The dispersion relationship is given. A proof of principle experiment is suggested.     

基于微纳光纤的通信器件研究进展

详细介绍了基于不同种类微纳光纤的光源、光耦合器、光开关和滤波器的结构、工作过程及性能参数,总结了基于微纳光纤的光纤通信器件的研究进展情况。指出微纳光纤器件的实用化是光纤通信器件的发展方向。     

Transient current spectroscopy and frequency dispersion studies of low temperature GaAs and Al0.3Ga0.7As metal-insulator-semiconductor diodes

Low temperature (LT)-grown GaAs and Al_0.3Ga_0.7As metal-insulator-n⁺-GaAs (MIN) diodes have been fabricated and their electrical properties analyzed. Studies were carried out to evaluate the interfacial quality of the LT layer and the underlying n⁺-GaAs layer using transient current spectroscopy (TCS) and capacitance-frequency (C-f) characterization. TCS studies on LT-GaAs revealed a high concentration of a continuum of states anda dominant electron trap with an activation energy of 0.52eV. In LT-Al_0.3Ga_0.7As, a shallow trap at 0.36eV and two deep level traps at 0.85eV and 1.12eV were observed. Frequency dispersion was observed to be less for LT-GaAs samples with an AlAs barrier layer than without an AlAs barrier layer. However, LT-Al_0.3Ga_0.7As MIN diodes displayed a smaller frequency dispersion than LT-GaAs MIN diodes. Upon further investigation into MISFET devices, it was found that LT-Al_0.3Ga_0.7As MISFET devices had better transconductance frequency dispersion characteristics than LT-GaAs MISFET devices did.