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111.
A. Pizzinat B.S. Marks L. Palmieri C.R. Menyuk A. Galtarossa 《Photonics Technology Letters, IEEE》2003,15(6):819-821
We consider the two Wai-Menyuk models of birefringence in periodically spun fibers, and we show that the differential group delay differs significantly for the two models when the spin period approaches or exceeds the fiber beat length. When the fiber correlation length is large, we explain this difference quantitatively, and we explain it qualitatively for any fiber correlation length. 相似文献
112.
Technological and human factors have contributed to the increasing complexity of the network management problem. Heterogeneity and globalization of network resources have, on one hand, increased user expectations for flexible and easy-to-use environments and, on the other, propounded entirely novel ways to face the management problem. Several research efforts recognize the need for integrated solutions to manage both network resources and services in open and global environments. Undoubtedly, these solutions should permit the coexistence of different management models and should interoperate with legacy systems. The presented management system, QoS management tool (QMTool), aspires to address the heterogeneity, complexity, and dynamic behavior of QoS-enabled IP networks by taking advantage of the optimum fit of a number of novel technologies. A layered framework architecture, including element, network management, and visualization service, is provided, and a high level of information abstraction in network configuration and monitoring is introduced mainly based on the capabilities of the Extensible Markup Language (XML). Moreover, the functional components for providing (re-)configuration, fault management monitoring, and network visualization facilities are also presented, followed by notes of implementation issues. 相似文献
113.
P L Melgarejo M Ternero I Gracia 《International journal of environmental analytical chemistry》1986,24(4):283-295
A study of the atmospheric pollution by suspended particulate lead in the city of Seville, Spain, was carried out during the period between March 1983 and February 1984. The results obtained from seven sampling stations allowed us to study the site to site variations; there are two locations with average annual concentrations higher than 2 micrograms X m-3. In one station, the meteorological and traffic effects and relationship with other traffic-related pollutants, were investigated. The regression analyses performed on the average monthly data have shown an inverse correlation with wind speed and temperature and a direct correlation with carbon monoxide and smoke concentrations, but no significant correlation was found with the lead deposition levels. 相似文献
114.
Methods for finding the parameters (energies and capture coefficients for electrons and holes) of the levels involved in the formation of the recombination flux are suggested. The temperature variation of these parameters for AlGaN/InGaN/GaN and InGaN/SiC structures is discussed. The parameters of the levels responsible for tunneling recombination are determined. 相似文献
115.
116.
This study explored strengths and limitations of table formatting choices by engaging twenty-eight participants in information searches in online tables, presented on a small-screen interface (Palm IIIc). Table length across conditions was held constant at three screens long (24 rows total) but varied from one to three screens wide (approximately 35, 70, and 105 characters per line). Target information was positioned in either the upper left, lower left, upper right, or lower right quadrants. Data collected were time on task, error rate, and level of participants' confidence in their answers. Experimenters found that increased horizontal scrolling imposed the heaviest burden on information search. This study supports restricting table widths to one screen on handheld computers. If necessary, however, tables can go to two screens wide without critical detriment to usability. While ruled line formatting is slightly better than interface character in providing visual support for the burden of horizontal scrolling, neither formatting option adequately compensates for the added burden. 相似文献
117.
Lianshan Yan Yeh C. Yang G. Lin L. Chen Z. Shi Y.Q. Willner A.E. Yao X.S. 《Lightwave Technology, Journal of》2003,21(7):1676-1684
We demonstrate the first programmable group-delay module based on polarization switching. With a unique binary tuning mechanism, the device can generate any differential group delay value from -45 to +45 ps with a resolution of 1.40 ps, or any true-time-delay value from 0 to 45 ps with a resolution of 0.7 ps. The delay varying speeds for both applications are under 1 ms and can be as fast as 0.1 ms. We evaluate both the dynamic and static performances of the device while paying special attention to its dynamic figures of merit for polarization-mode dispersion emulation and compensation applications. Our experiment shows that the device exhibits a negligible transient-effect induced power penalty (<0.2 dB) in a 10-Gb/s nonreturn-to-zero system. 相似文献
118.
Kerber A. Cartier E. Pantisano L. Degraeve R. Kauerauf T. Kim Y. Hou A. Groeseneken G. Maes H.E. Schwalke U. 《Electron Device Letters, IEEE》2003,24(2):87-89
The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling. 相似文献
119.
120.
I. L. Bataronov A. M. Roshchupkin 《Journal of Applied Mechanics and Technical Physics》1991,32(2):259-265
Translated from Zhurnal Prikladnoi Mekhaniki i Tekhnicheskoi Fiziki, No. 2, pp. 127–134, March–April, 1991. 相似文献