Multi-H phase-coded modulations with asymmetric modulationindexes

Multi-H phase-coded modulation (MHPM) is a bandwidth-efficient modulation scheme which offers substantial coding gain over conventional digital modulation schemes. MHPM with asymmetric modulation indices corresponding to the bipolar data +1 and -1 is considered, and numerical results for the minimum Euclidean distances are provided. It is shown that performance improvements on the error probability over conventional MHPM are gained with essentially the same bandwidth and a very slight modification in implementation. The upper bounds on the error probabilities as functions of observation intervals and received E_b/N₀ are also investigated in detail. It is concluded that the concept of asymmetric modulation indices for MHPM is attractive for bandwidth and power-efficient modulation     

A supramolecular hydrogen‐bonded complex between 1,3,5‐tris(diisobutylhydroxysilyl)benzene and trans‐bis(4‐pyridyl)ethylene

The trisilanol 1,3,5‐(HOi‐Bu₂Si)₃C₆H₃ ( 7 ), prepared in three steps from 1,3,5‐tribromobenzene via the intermediates 1,3,5‐(Hi‐Bu₂Si)₃C₆H₃ ( 8 ) and 1,3,5‐(Cli‐Bu₂Si)₃C₆H₃ ( 9 ) forms an equimolar complex with trans‐bis(4‐pyridyl)ethylene (bpe), 7 ·bpe, whose structure was investigated by X‐ray crystallography. The hydrogen‐bonded network features a number of SiO? H(H)Si and SiO? H hydrogen bridges. Evidence was found for cooperative strengthening within the sequential hydrogen bonds. Copyright © 2007 John Wiley & Sons, Ltd.     

Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition

We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied, the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates.     

Excited state absorption of pump radiation as a loss mechanism insolid-state lasers

The characteristics of optical pumping dynamics in laser-pumped, rare-earth-doped, solid-state laser materials are investigated by using a tunable alexandrite laser to pump Y₃Al₅O₁₂ :Nd³⁺ in an optical cavity. It is found that the slope efficiency of the Nd laser operation depends strongly on the wavelength of the pump laser. For pump wavelengths resulting in low slope efficiencies, intense fluorescence emission is observed from the sample in the blue-green spectral region. This is attributed to the excited-state absorption of pump photons which occurs during radiationless relaxation from the pump band to the metastable state. This type of process is an important loss mechanism for monochromatic pumping of laser systems at specific pump wavelengths     

Iterative approximation analysis of guard-channel-based strategies in mobile cellular networks

A new mathematical method to analyse the performance of guard-channel-based strategies is proposed. The analysis is based on the iterative calculation of the average effective channel holding time. The method presented provides higher accuracy than alternative solutions previously reported in the literature     

Criteria for accurate usage of block models

The results of block model calculations for multiple discretizations of a dielectric sphere and circular cylinder suggest that it is essential that the cells must be arranged for a best-fit of the body being modeled, the matrix elements must be reasonably accurate, and the cells must be small enough so that the pulse-function basis approximation is not blatantly unreasonable. When these criteria are approximately satisfied the remaining errors appear to be mainly due to imperfect representation of the shape of the object being modeled. It appears that the accuracy can be improved by using discretizations having cells of reduced size near the surface of the object. Geometric factors are defined which allow testing the potential accuracy of a solution without dimensioning or inverting a large matrix. Several unique procedures for discretization are also described that have the potential of partially mitigating the errors due to inaccurate representation of the shape of a scatterer.     

Voltage ‐ Current Study of an Atmospheric Dielectric Barrier Discharge

The discharge behaviour of an atmospheric dielectric barrier parallel plate discharge, used for surface treatment, is studied. Since an uniform plasma is preferable for surface treatment, filaments must be avoided in the discharge. The occurrence of filaments can be detected by measuring the current flowing through the discharge. Current and voltage measurements give an indication of the power consumption by the plasma. The power consumption of the plasma as function of the applied frequency is examined. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Noninterfering optical method of HBT circuit evaluation

The authors report a novel noninterfering and simple approach for evaluation of circuits implemented with AlGaAs/GaAs heterojunction bipolar transistors (HBTs). This method makes use of radiative recombination in the base region of current-carrying HBTs. The infrared radiation emitted is 'visible' to the closed-circuit TV (CCTV) cameras. Therefore, one can view the operation of the HBT circuit under test at normal biases with a TV monitor. This method can be used to determine logic states of gates, as well as collector current of individual HBTs within integrated circuits.<>