Planar lightwave integrated circuits with embedded actives for board and substrate level optical signal distribution

This paper explores design options for planar optical interconnections integrated onto boards, discusses fabrication options for both beam turning and embedded interconnections to optoelectronic devices, describes integration processes for creating embedded planar optical interconnections, and discusses measurement results for a number of integration schemes that have been demonstrated by the authors. In the area of optical interconnections with beams coupled to and from the board, the topics covered include integrated metal-coated polymer mirrors and volume holographic gratings for optical beam turning perpendicular to the board. Optical interconnections that utilize active thin film (approximately 1-5 /spl mu/m thick) optoelectronic components embedded in the board are also discussed, using both Si and high temperature FR-4 substrates. Both direct and evanescent coupling of optical signals into and out of the waveguide are discussed using embedded optical lasers and photodetectors.     

Profile-Driven Component Placement for Cluster-Based Online Services

The growth of the Internet and of various intranets has spawned a wealth of online services, most of which are implemented on local-area clusters using remote invocation (for example, remote procedure call/remote method invocation) among manually placed application components. Component placement can be a significant challenge for large-scale services, particularly when application resource needs are workload dependent. Automatic component placement has the potential to maximize overall system throughput. The key idea is to construct (offline) a mapping between input workload and individual-component resource consumption. Such mappings, called component profiles, then support high-performance placement. Preliminary results on an online auction benchmark based on J2EE (Java 2 Platform, Enterprise Edition) suggest that profile-driven tools can identify placements that achieve near-optimal overall throughput.     

Optical-transmission characteristics of optical-fiber cables and installed optical-fiber cable networks for WDM systems

Many cables containing 1.3-/spl mu/m zero-dispersion single-mode (SM) optical fibers are installed in trunk and access networks. Recently, there have been a number of studies on wavelength-division-multiplexing (WDM) systems designed to increase transmission capacity and flexibility. If we can construct WDM systems using SM optical-fiber cable networks designed to transmit using wavelengths in the 1.3-/spl mu/m window (O-band), this will prove very effective in reducing construction costs. It is therefore important to examine the wavelength dependence of the transmission characteristics of SM optical-fiber cables and networks that have already been installed and in which several optical fibers are joined. In this paper, we describe the measured optical characteristics of SM optical-fiber cables and installed optical-fiber cable networks at various wavelengths. The optical characteristics were stable in the 1.46 to 1.625-/spl mu/m wavelength range and we confirmed that the installed SM optical-fiber cable networks could be used for WDM system applications.     

提高托盘利用效率的重要手段——电子信息化管理

托盘能否有效运用对物流的畅通与否关系重大,这已经引起了国内外专家和学者们的重视,并就此制定了托盘电子信息化管理系统,旨在更合理地使用托盘,推进托盘一体化和共用系统的建立。而RFID技术在托盘的电子信息化管理的应用更将大大提高物流的效率与准确性,托盘电子信息化管理将成为今后托盘管理的趋势。     

SIP协议在VoIP终端的设计和实现

SIP是下一代网络中的重要协议,而基于SIP协议的VoIP业务已经对传统话音业务形成了重要的威胁,并成为各大运营商竞争的重点业务之一.概述了VoIP业务的发展现状,介绍了SIP协议的实体、消息机制以及它所提供的业务,通过对SIP协议的原理及工作流程的分析,论证了其在实现一个VoIP系统中的优势,在此基础上设计并实现了一个基于SIP协议的VoIP终端.     

一种二元域上的快速计算哈希函数

论文从映射的角度,将哈希函数分为三类:严格哈希函数、计算哈希函数和实用哈希函数。在此基础上,根据二元域上二次方程x2 x c=0的部分不可解的性质,构造了一种计算哈希函数,它满足单向性和一一对应性,同时具有运算速度快的优点。     

A Fast π/4-DQPSK Demodulation Arithmetic and Realization

The modulated signals of π /4-DQPSK can be demodulated with the differenced method,and the technology has been used in the communication. The traditional demodulated method needs a lot of calculation. In this paper, a new method based on fast arithmetic digital demodulation of DQPSK is presented. The new method only uses the sign of the modulated signal instead of digital signal through the A/D in the traditional method. With the new method, the system has higher speed, and can save some hardware in the FPGA. An experiment of the new method with the DQPSK is given in this paper.     

Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation

The authors report on the effects of silicon nitride (SiN) surface passivation and high-electric field stress (hot electron stress) on the degradation of undoped AlGaN-GaN power HFETs. Stressed devices demonstrated a decrease in the drain current and maximum transconductance and an increase in the parasitic drain series resistance, gate leakage, and subthreshold current. The unpassivated devices showed more significant degradation than SiN passivated devices. Gate lag phenomenon was observed from unpassivated devices and removed by SiN passivation. However, SiN passivated devices also showed gate lag phenomena after high-electric field stress, which suggests possible changes in surface trap profiles occurred during high-electric field stress test.     

Influence of device engineering on the analog and RF performances of SOI MOSFETs

This work presents a systematic comparative study of the influence of various process options on the analog and RF properties of fully depleted (FD) silicon-on-insulator (SOI), partially depleted (PD) SOI, and bulk MOSFET's with gate lengths down to 0.08 /spl mu/m. We introduce the transconductance-over-drain current ratio and Early voltage as key figures of merits for the analog MOS performance and the gain and the transition and maximum frequencies for RF performances and link them to device engineering. Specifically, we investigate the effects of HALO implantation in FD, PD, and bulk devices, of film thickness in FD, of substrate doping in SOI, and of nonstandard channel engineering (i.e., asymmetric Graded-channel MOSFETs and gate-body contacted DTMOS).     

化学复合镀层激光处理研究

研究了激光处理对Ni-P -SiC化学复合镀层的影响。借助于扫描电镜、能谱仪、X射线衍射、显微硬度计等设备对激光处理后复合镀层的表面形貌、组织结构及性能进行了综合分析。结果表明 ,对复合镀层进行激光处理可以获得与炉内加热同样的镀层硬度 ,且当激光功率 4 0 0W ,扫描速度 1.5m /min时 ,镀层硬度高于炉内加热的硬度