Investigation of chemometric calibration performance based on different chemical matrix and signal-to-noise ratio.

The chemometric calibration performance was systematically investigated by two parameters (changing the chemical matrix as well as the signal-to-noise ratio) of the NIR (near-infrared) spectrum. Three different analytes (hexane, cyclohexane, toluene) were selected and heptane was used as a solvent. The degree of spectral difference significantly affected the calibration performance. The largest structural difference between the analyte and the solvent provided the best calibration result for a given signal-to-noise ratio. Additionally, the signal-to-noise ratio of the spectra also directly influenced the calibration performance. Overall, the spectral difference and signal-to-noise ratio were the major factors for governing the chemometric calibration performance, especially in the low-concentration range.     

Performance of GaAs-AlGaAs V-grooved inner stripe quantum-well wirelasers with different current blocking configurations

GaAs-AlGaAs V-grooved inner stripe (VIS) quantum-well wire (QWW) lasers grown by metalorganic chemical vapor deposition with different current blocking configurations, n-blocking on p-substrate (VIPS), p-n-p-n blocking on n-substrate (VI(PN)_nS) and p-blocking on n-substrate (VINS) have been fabricated and characterized. The VIPS QWW lasers show the most stable characteristics with effective current confinement: one of the lasers shows fundamental transverse mode, lasing up to 5 mW/facet, typical threshold current of 39.9 mA at 818.5 mm, an external differential quantum efficiency of 24%/facet, and characteristic temperature of 92 K. The current tuning rate was almost linear at 0.031 mm/mA, and the temperature tuning rate was measured to be 0.14 nm/°C. Comparison of the light output versus current characteristics of the lasers with different current blocking configurations is presented here     

An isolated ZVS/ZCS flyback converter using the leakage inductanceof the coupled inductor

This paper describes a simple and effective way to modify an existing hard-switched flyback power converter into a circuit with zero-voltage switching (ZVS) and zero-current switching (ZCS). The key improvement is to turn the unattractive features of the coupled inductor leakage inductance and snubber capacitor into attractive ones. The coupled inductor leakage inductance and snubber are used to form a quasi-resonant circuit to facilitate ZVS/ZCS of all power devices. The operating principles of the power converter and experimental results are presented     

Anomalous variations of OFF-State leakage current in poly-Si TFTunder static stress

Studies the anomalous variations of the OFF-state leakage current (I_OFF) in n-channel poly-Si thin-film transistors (TFTs) under static stress. The dominant mechanisms for the anomalous I_OFF can be attributed to (1) I_OFF increases due to channel hot electrons trapping at the gate oxide/channel interface and silicon grain boundaries and (2) I_OFF decreases due to hot holes accumulated/trapped near the channel/bottom oxide interface near the source region. Under the stress of high drain bias, serious impact ionization effect will occur to generate hot electrons and hot holes near the drain region. Some of holes will be injected into the gate oxide due to the vertical field (~(V_Gstress V_Dstress)/T _OX) near the drain and the others will be migrated from drain to source along the channel due to lateral electric field (~V_Dstress/L_CH)     

Synthesis of 5‐Radioiodoarabinosyl Uridine Analog for Probing the HSV‐1 Thymidine Kinase Gene

Tumor cells transduced with herpes simplex virus thymidine kinase gene have been intensively applied to the field of positron emission tomography via imaging of its substrate. As a pilot synthesis approach, a facile preparation of 5‐[¹²⁵I] iodoarabinosyl uridine starting from commercially available uridine is reported herein.     

Parasitic Bipolar Junction Transistors in a Floating-Gate MOSFET for Fluorescence Detection

In this letter, we examined whether the parasitic bipolar junction transistors (BJTs) in the MOSFET fabricated by the standard CMOS process can play a role as a fluorescence detector. To suppress the action of two vertical parasitic BJTs, the gate and n-well were tied in the parasitic BJTs, and the body node was connected to the drain. The proposed device was compared with the inherent and the parasitic diodes in the MOSFET. It had 100 times higher photocurrents than the diodes in the MOSFET. In addition, it was applied for the detection of the fluorescent signal, and could detect near 10 nM of Alexa 546. Therefore, CMOS-process-compatible parasitic BJTs can be used as a photodetector in an integrated fluorescence detector.     

Analysis of a grating metal structure with broad back-scatteringfield pattern for applications in vehicle collision avoidancesystem

In this paper, grating metal structures with broad and flat back-scattering field patterns are studied for possible applications in a vehicle collision avoidance system. The two-dimensional TE scattering of a planar grating structure and a curved grating structure are analyzed at a frequency of 77 GHz. For the planar structure, the method of moments and Floquet's theorem are used to solve the induced current and the resultant back-scattering field. Based on the results of the planar structure, the scattering field of the curved grating structure is obtained by using a perturbation method. The influence on the field pattern of the curvature as well as other structure parameters, such as the width and geometry of each period in the grating structure, is investigated     

Pd (II)‐catalyzed vinyl addition polymerization of novel functionalized norbornene bearing dimethyl carboxylate groups

Three novel functionalized polynorbornenes (PNB) with pendant dimethyl carboxylate group (carboxylates—acetate, propionate, and butyrate) are synthesized as a vinyl‐type with a palladium (II) catalyst in high yield. The effects of size of substitutents, molar ratio of monomer to catalyst, solvent polarity, reaction time, and temperature on the polymerization of exo‐norbornene dimethyl propionate were systematically investigated. The low molar ratio and temperature, as well as high polarity of solvent, and long reaction time, are favorable for the enhancement of the monomer conversion, especially, the solvent have an obvious effect on the catalyst activity. The resulting poly(cis‐norbornene‐exo‐2,3‐dimethyl carboxylates) (PNB‐dimethyl carboxylates) show good solubility in common organic solvent and high thermal stability up to 360 °C. The glass transition temperature was detected by DMA at 331, 324, and 318 °C for acetate, propionate, and butyrate, respectively. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 3391–3399, 2007     

Preparation of Fe–Si–B–Nb amorphous powder cores with excellent high-frequency magnetic properties

FeSiBNb amorphous powder cores were prepared with the amorphous powder by gas atomization and subsequent hot pressing of resulting powder after creating oxide layers on the amorphous powder. Fully amorphous FeSiBNb powders with good soft magnetic properties were successfully obtained in the particle size range below 100 μm. FeSiBNb amorphous powder cores exhibit stable permeability up to 10 MHz, showing excellent high-frequency characteristics.