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51.
Results of X-ray absorption studies of copper nanoclusters embedded in SiO2 matrix and selenium chains confined in channels of cancrinite are reported. Initially randomly distributed copper atoms mainly surrounded by silicon species in an as-made film upon annealing form copper nanoclusters with a characteristic size of 80 Å and the structure identical to that of bulk copper. The characteristic size of the clusters does not increase with further annealing. Selenium in cancrinite is shown to form strongly oriented linear dimerised chains with a bond length much larger than that in bulk forms of selenium.  相似文献   
52.
The self-assembly of discrete cyanometallates has attracted significant interest due to the potential of these materials to undergo soft metallophilic interactions as well as their optical properties. Diblock copolypeptide amphiphiles have also been investigated concerning their capacity for self-assembly into morphologies such as nanostructures. The present work combined these two concepts by examining supramolecular hybrids comprising cyanometallates with diblock copolypeptide amphiphiles in aqueous solutions. Discrete cyanometallates such as [Au(CN)2], [Ag(CN)2], and [Pt(CN)4]2− dispersed at the molecular level in water cannot interact with each other at low concentrations. However, the results of this work demonstrate that the addition of diblock copolypeptide amphiphiles such as poly-(L-lysine)-block-(L-cysteine) (Lysm-b-Cysn) to solutions of these complexes induces the supramolecular assembly of the discrete cyanometallates, resulting in photoluminescence originating from multinuclear complexes with metal-metal interactions. Electron microscopy images confirmed the formation of nanostructures of several hundred nanometers in size that grew to form advanced nanoarchitectures, including those resembling the original nanostructures. This concept of combining diblock copolypeptide amphiphiles with discrete cyanometallates allows the design of flexible and functional supramolecular hybrid systems in water.  相似文献   
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In this study, we aimed to isolate bacteria capable of degrading the polysaccharide ulvan from the green algae Ulva sp. (Chlorophyta, Ulvales, Ulvaceae) in marine environments. We isolated 13 ulvan-degrading bacteria and observed high diversity at the genus level. Further, the genera Paraglaciecola, Vibrio, Echinicola, and Algibacter, which can degrade ulvan, were successfully isolated for the first time from marine environments. Among the 13 isolates, only one isolate (Echinicola sp.) showed the ability not only to produce externally expressed ulvan lyase, but also to be periplasmic or on the cell surface. From the results of the full-genome analysis, lyase was presumed to be a member of the PL25 (BNR4) family of ulvan lyases, and the bacterium also contained the sequence for glycoside hydrolase (GH43, GH78 and GH88), which is characteristic of other ulvan-degrading bacteria. Notably, this bacterium has a unique ulvan lyase gene not previously reported.  相似文献   
54.
In this paper, we propose a static lightpath establishment method to design low‐power all‐optical networks under the constraint of four‐wave mixing (FWM). Since the FWM causes nonlinear interchannel crosstalk, it degrades the communication quality of optical signals. The FWM crosstalk effect becomes strong in a fiber as the number of passing optical signals increases. Therefore, we should reduce the number of optical signals passing through the same fiber from the perspective of the FWM. Meanwhile, in order to enhance the power efficiency of optical amplifiers, which are deployed at each optical fiber, it is preferred that multiple optical signals are transmitted in the same fiber. In order to decrease the power consumption while keeping high communication quality, the proposed method statically selects routes, wavelengths, and fibers for each traffic demand, considering the FWM crosstalk effect and the usage efficiency of the optical amplifiers. We show the performance of the proposed method through numerical experiments.  相似文献   
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The grooved-mirror-type Fabry-Perot (GFP) oscillator was used for coherent power-combining of multiple elements in the millimeter- and submillimeter-wave region. The admittance of the Gunn diode in oscillation was measured experimentally in the millimeter-wave region to design the GFP oscillator. The gain characteristics of the diode were found at the frequencies from 42 to 48 GHz from the measured results. With this Gunn diode in the GFP resonator, oscillation was observed. The experimental results indicated that for impedance matching between the diode and the resonant cavity, the groove height must be adjusted  相似文献   
60.
All the six lattice parameters (a, b, c, alpha, beta and gamma) of a strained area of an InAs layer grown on a GaAs substrate were determined without any assumption of the crystal lattice symmetry from the higher-order Laue zone (HOLZ) lines appearing in one convergent-beam electron diffraction (CBED) pattern. The analysis was performed with three steps. Firstly, the parameters alpha and beta were determined from the deviations of the HOLZ lines from the mirror symmetry perpendicular to the [001] direction. Secondly, the parameter c was determined from the distance between the intersections of the HOLZ lines, which have the same h and k indices but different l indices. Finally, the parameters a, b and gamma were determined simultaneously from several distances between the intersections of the HOLZ lines. The lattice parameters determined for the strained area were a = 0.611(2) nm, b = 0.615(1) nm, c = 0.6119(7) nm, alpha = 89.5(1) degrees, beta = 89.0(2) degrees and gamma = 89.1(2) degrees. This result implies that the cubic lattice of InAs is elongated approximately in the [111] direction and the exact lattice symmetry is triclinic. The same analysis procedure was applied to another two specimen areas. It was found that the areas have orthorhombic distortions with lattice parameters a = 0.607(2) nm, b = 0.604(1) nm and c = 0.6085(7) nm for one area, and with a = 0.607(2) nm, b = 0.605(1) nm and c = 0.6065(7) nm for the other area. It is should be emphasized that the present analysis of lattice distortions is immediately applicable to the other semiconductors, such as Si, SiGe or GaAs layers, without assuming any crystal system.  相似文献   
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