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201.
A new learning model for real-time, grey-level image segmentation is presented. The model gives excellent results for images with different shapes. 相似文献
202.
An Si bipolar monolithic decision circuit for practical use is developed using an improved circuit technique and super self-aligned process technology with the reliable 1.25 ?m rule. The circuit consists of a slice amplifier, a master-slave D flip-flop and an output buffer. This circuit is capable of operating up to 2.1 Gbit/s with a decision threshold ambiguity width of less than 10 mV. In addition, a clock phase margin of 250 degrees and power dissipation of 640 mW at VEE=?6 V can be achieved. 相似文献
203.
Off-the-shell anomalous factors of the two-body Coulomb transition matrices appear in the integral form of the Faddeev second-order
nuclear-electronic amplitude, for proton-hydrogen charge transfer scattering in a typical nlm → n′l′m′ transition. A symmetric-impulse approximation (SIA) is applied to eliminate these factors and an induction method is proposed
to analytically calculate the remaining integrals. The nuclear-electronic amplitude is derived for the general case, and for
totally symmetric collisions, in terms of generalized hypergeometric functions of two variables, F
4, and of one variable, 3
F
2, respectively. The angular distribution of the second-order nuclear-electronic charge transfer amplitude shows the Thomas
mechanism as a peak or a hump for symmetric and asymmetric collisions. There also exists a peak in the forward angular distribution
of the second-order nuclear-electronic amplitude, which partly cancels the kinematic peak in the angular distribution of the
charge transfer differential cross sections. 相似文献
204.
We first demonstrate an integrated-optic device for a fibre laser Doppler velocimeter, which consists of a waveguide interferometer and a frequency shifter in z-propagation Ti-diffused LiNbO3. The device is also pigtailed with a single-mode fibre to pick up a Doppler-shifted signal. Using the fabricated device, the velocity of a moving object was successfully heterodyne-detected with a signal/noise ratio of 30dB. 相似文献
205.
A Graphene Field-Effect Device 总被引:2,自引:0,他引:2
In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs 相似文献
206.
207.
208.
R. L. Moreira P. Saint-Grgoire M. Lopez M. Latour 《Journal of Polymer Science.Polymer Physics》1989,27(3):709-722
The thermal and dielectric behaviors of poly(vinylidene fluoride-trifluoroethylene) copolymers near the ferroelectric-to-paraelectric phase transition are investigated for samples with 20, 25, 30, and 40 mol% trifluoroethylene (TrFE). The data suggest that the transition becomes continuous for a particular composition near 50 mol% TrFE. Experimental data are sensitive to thermal history (kinetics of crystallization, and kinetics and cycling over the structural transition). It is found that several anomalies are present at the structural change, and in particular the 30 mol% TrFE sample shows the most marked anomalies. These phenomena can be attributed to defects, but another possibility would be the existence of an intemediate supplementary phase. Both hypotheses are discussed. 相似文献
209.
In recent years there has emerged significant interest in low pressure radio frequency (rf) glow discharges which are used widely particulary in IC fabrication. Various parameters of the rf glow discharge have been found to be useful for its electrical characterization; however, there is no uniformity and agreement. Extensive experimental investigations on various discharge systems have shown, that the self-bias on the rf driven electrode, the complex conductivity and the breakdown characteristic are preferable parameters of rf discharges. Advantageously the self-bias and the complex conductivity should be presented in dependence on the pressure and the applied rf voltage. The discharge current cannot be measured quite accurately due to currents via leaky capacitors and the deviations from a sinusoidal form of the current due to nonlinearities. 相似文献
210.