2-D symmetry: theory and filter design applications

In this comprehensive review article, we present the theory of symmetry in two-dimensional (2-D) filter functions and in 2-D Fourier transforms. It is shown that when a filter frequency response possesses symmetry, the realization problem becomes relatively simple. Further, when the frequency response has no symmetry, there is a technique to decompose that frequency response into components each of which has the desired symmetry. This again reduces the complexity of two-dimensional filter design. A number of filter design examples are illustrated.     

High-performance MIM capacitor using ALD high-k HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectrics

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.     

Low-temperature poly-SiGe alloy growth of high gain/speed pin infrared photosensor with gold-induced lateral crystallization (Au-ILC)

The hydrogenated poly-silicon germanium (poly-SiGe:H) epitaxial film has been investigated using gold-induced lateral crystallization (Au-ILC) technology on a-SiGe:H layers at 10-h 350/spl deg/C annealing temperature and 60-sccm hydrogen (H/sub 2/) content. Using this optimal condition, the growth rate of the induced Au was as large as 15.9 /spl mu/m/h. With a low annealing temperature (/spl les/400/spl deg/C) and large growth rate, this novel technology will be noticeably useful for poly-SiGe:H pin IR-sensing fabrication on a conventional precoated indium tin oxide (ITO)-glass substrate. Under a 1-/spl mu/W IR-LED incident light (with peak wave length at 710 nm) and at a 5-V biased voltage, the poly-SiGe:H pin IR sensor developed by the Au-ILC technology, i.e., an Al (anode)/n poly-SiGe:H/i poly-SiGe:H/p poly-SiGe:H/ITO (cathode)/glass-substrate structure allowed for maximum optical gain and response speed. The optical gains and the response speeds were almost 600 and 130%, respectively, better than that of a traditional pin type. Meanwhile, the FWHM of a poly-SiGe:H pin sensor with Au-ILC technology was reduced from 280 to 150 nm. This reveals excellent IR-sensing selectivity. These IR-sensing trials demonstrated again that the proposed Au-ILC technology has very useful application in the field of low cost integrated circuits on optoelectronic applications.     

Inside Front Cover: The Elastic Properties and Plastic Behavior of Two‐Dimensional Polymer Structures Fabricated by Laser Interference Lithography (Adv. Funct. Mater. 10/2006)

The probing of the micromechanical properties within a two‐dimensional polymer structure with sixfold symmetry fabricated via interference lithography reveals a nonuniform spatial distribution in the elastic modulus “imprinted” with an interference pattern in work reported by Tsukruk, Thomas, and co‐workers on p. 1324. The image prepared by M. Lemieux and T. Gorishnyy shows how the interference pattern is formed by three laser beams and is transferred to the solid polymer structure. The elastic and plastic properties within a two‐dimensional polymer (SU8) structure with sixfold symmetry fabricated via interference lithography are presented. There is a nonuniform spatial distribution in the elastic modulus, with a higher elastic modulus obtained for nodes (brightest regions in the laser interference pattern) and a lower elastic modulus for beams (darkest regions in the laser interference pattern) of the photopatterned films. We suggest that such a nonuniformity and unusual plastic behavior are related to the variable material properties “imprinted” by the interference pattern.     

The influence of oxygen partial pressure on growth of the (Hg,Re)-1223 intergrain junction

Hg/sub 0.82/Re/sub 0.18/Ba/sub 2/Ca/sub 2/Cu/sub 3/O/sub 8+/spl delta// polycrystalline samples were successfully obtained by using different oxygen partial pressure in the annealing treatment of the precursor ceramic. The doping state was confirmed by X-ray powder diffraction pattern analysis and by observing distinct thermopower values at room temperature. Also, the intergrain regions have shown an improvement in the critical current density when using the precursor preparation with 10% O/sub 2/ and 90% Ar (optimal doped). The optimal doped sample has presented the highest /spl alpha/ exponent of the J/sub c//spl prop/[1-(T/T/sub c/)/sup 2/]/sup /spl alpha// dependence. For the case of (Hg,Re)-1223 polycrystalline superconductor applications, the /spl alpha/ exponent can be used as a junction quality parameter.     

Serially concatenated space-time codes with iterative decoding and performance limits of block-fading channels

This work considers space-time channel coding for systems with multiple-transmit and a single-receive antenna, over space uncorrelated block-fading (quasi-static) channels. Analysis of the outage probability over such channels reveals the existence of a threshold phenomenon. The outage probability can be made arbitrary small by increasing the number of transmit antennas, only if the E/sub b//N/sub 0/ is above a threshold which depends on the coding rate. Furthermore, it is shown that when the number of transmit antennas is increased, the /spl epsi/-capacity of a block-fading Rayleigh channel tends to the Shannon capacity of an additive white Gaussian noise channel. This paper also presents space-time codes constructed as a serial concatenation of component convolutional codes separated by an interleaver. These schemes provide full transmit diversity and are suitable for iterative decoding. The rate of these schemes is less than 1 bit/s/Hz, but can be made arbitrary close to 1 bit/s/Hz by the use of Wyner-Ash codes as outer components. Comparison of these schemes with structures from literature shows that performance gains can be obtained at the expense of a small decrease in rate. Computer simulation results over block-fading Rayleigh channels show that the frame-error rate of several of these schemes is within 2-3 dB from the theoretical outage probability.     

A CMOS multichannel 10-Gb/s transceiver

We describe a CMOS multichannel transceiver that transmits and receives 10 Gb/s per channel over balanced copper media. The transceiver consists of two identical 10-Gb/s modules. Each module operates off a single 1.2-V supply and has a single 5-GHz phase-locked loop to supply a reference clock to two transmitter (Tx) channels and two receiver (Rx) channels. To track the input-signal phase, the Rx channel has a clock recovery unit (CRU), which uses a phase-interpolator-based timing generator and digital loop filter. The CRU can adjust the recovered clock phase with a resolution of 1.56 ps. Two sets of two-channel transceiver units were fabricated in 0.11-/spl mu/m CMOS on a single test chip. The transceiver unit size was 1.6 mm /spl times/ 2.6 mm. The Rx sensitivity was 120-mVp-p differential with a 70-ps phase margin for a common-mode voltage ranging from 0.6 to 1.0 V. The evaluated jitter tolerance curve met the OC-192 specification.     

High-performance self-aligned SiGeC HBT with selectively grown Si/sub 1-x-y/Ge/sub x/C/sub y/ base by UHV/CVD

Si/sub 1-x-y/Ge/sub x/C/sub y/ selective epitaxial growth (SEG) was performed by cold-wall, ultrahigh-vacuum chemical vapor deposition, and the effects of incorporating C on the crystallinity of Si/sub 1-x-y/Ge/sub x/C/sub y/ layers and the performance of a self-aligned SiGeC heterojunction bipolar transistor (HBT) were evaluated. A Si/sub 1-x-y/Ge/sub x/C/sub y/ layer with good crystallinity was obtained by optimizing the growth conditions. Device performance was significantly improved by incorporating C, as a result of applying Si/sub 1-x-y/Ge/sub x/C/sub y/ SEG to form the base of a self-aligned HBT. Fluctuations in device performance were suppressed by alleviating the lattice strain. Furthermore, since the B out diffusion could be suppressed by incorporating C, the cutoff frequency was able to be increased with almost the same base resistance. A maximum oscillation frequency of 174 GHz and an emitter coupled logic gate-delay time of 5.65 ps were obtained at a C content of 0.4%, which shows promise for future ultrahigh-speed communication systems.     

On the one-wayness against chosen-plaintext attacks of the Loidreau's modified McEliece PKC

McEliece public-key cryptosystem (PKC) is one of a few alternatives for the current PKCs that are mostly based on either the integer factoring problem (IFP) or the discrete logarithm problem (DLP) that would be solved in polynomial time after the emergence of quantum computers. The security of the McEliece PKC is based on the decoding problem and it is known that it satisfies, with an appropriate conversion, the strongest security notion, i.e., INDistinguishability of encryption against adaptively Chosen-Ciphertext Attacks (IND-CCA2), in the random oracle model under the assumption that the underlying primitive McEliece PKC satisfies a weak security notion of One-Wayness against Chosen-Plaintext Attacks (OW-CPA). OW-CPA is said to be satisfied if it is infeasible for chosen plaintext attacks to recover the whole plaintext of an arbitrarily given ciphertext. Currently, the primitive McEliece PKC satisfies OW-CPA if a parameter n/spl ges/2048 with optimum t and k is chosen since the binary work factor for (n,k,t)=(2048,1278,70) to break it with the best CPA is around 2/sup 106/, which is infeasible even if world-wide computational power is used. While the binary work factor for the next smaller parameter n=1024 is in a gray level of 2/sup 62/, it will be improved by applying Loidreau's modification that employs Frobenius automorphism in Goppa codes. In this paper, we carefully investigate the one-wayness of the Loidreau's modified McEliece PKC against ever known CPAs and new CPAs we propose, and then show that it certainly improves the one-wayness against ever known CPAs but it is vulnerable against our new CPAs. Thus, it is rather harmful to apply the new modification to the McEliece PKC.