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741.
Efforts to combine the intramolecular nitroaldol reaction with lipase-catalysed resolution of the resulting nitroaldol adduct in a one-pot dynamic kinetic resolution (DKR) are described. Significant challenges were encountered in the combination of the two systems. trans-2-Methyl-2-nitrocyclohexyl acetate (±)-3b was isolated in excellent enantiopurity (>98% ee) via a sequential DKR sequence where the lipase-mediated resolution and base-mediated interconversion of 2-methyl-2-nitrocyclohexanol 2 were effected alternately, demonstrating the feasibility of this approach initially. Further work showed, for the first time, evidence that a DKR-type system is possible for 2. Reaction engineering allowed the design of a sequential one-pot reaction system which furnished the products with excellent enantioselectivity, and good diastereoselectivity.  相似文献   
742.
For numerous digital imaging applications, there is a need to maintain the highest quality perceived image, while utilizing a printer or display that can only achieve a limited number of output states. Digital halftoning is the approach that has been widely used to meet this demand. In this focus paper, we provide a short summary of halftone techniques, then we concentrate on the newer and expanding roles of stochastic halftone screens—which are free of regular periodic structures and have numerous advantages in quality color rendering. We address some theoretical issues, design and optimality issues, printer compensation issues, and color quality issues that pertain to the development and use of stochastic screens for electronic imaging devices.  相似文献   
743.

A scheme for combining data rate, energy efficiency and relay location in bidirectional amplify-and-forward relay networks is proposed in this paper. The proposed scheme allows the energy consumption to be evaluated for all positions of a chosen relay along a line between the transmitter and the destination. Furthermore, the evaluated energy reduction is used to obtain the optimal balance between the energy efficiency (EE) and spectrum efficiency (SE). This balance enables the EE to increase significantly with the least loss of SE. Such a balance is then expressed with respect to the bit error rate. Numerical examples are provided to validate the analysis.

  相似文献   
744.
A quantum‐tunneling metal‐insulator‐metal (MIM) diode is fabricated by atmospheric pressure chemical vapor deposition (AP‐CVD) for the first time. This scalable method is used to produce MIM diodes with high‐quality, pinhole‐free Al2O3 films more rapidly than by conventional vacuum‐based approaches. This work demonstrates that clean room fabrication is not a prerequisite for quantum‐enabled devices. In fact, the MIM diodes fabricated by AP‐CVD show a lower effective barrier height (2.20 eV) at the electrode–insulator interface than those fabricated by conventional plasma‐enhanced atomic layer deposition (2.80 eV), resulting in a lower turn on voltage of 1.4 V, lower zero‐bias resistance, and better asymmetry of 107.  相似文献   
745.
Solution‐processed, low cost thin films of layered semiconductors such as transition metal dichalcogenides (TMDs) are potential candidates for future printed electronics. Here, n‐type electrolyte‐gated transistors (EGTs) based on porous WS2 nanosheet networks as the semiconductor are demonstrated. The WS2 nanosheets are liquid phase exfoliated to form aqueous/surfactant stabilized inks, and deposited at low temperatures (T < 120 °C) in ambient atmosphere by airbrushing. No solvent exchange, further additives, or complicated processing steps are required. While the EGTs are primarily n‐type (electron accumulation), some hole transport is also observable. The EGTs show current modulations > 104 with low hysteresis, channel width‐normalized on‐conductances of up to 0.27 µS µm?1 and estimated electron mobilities around 0.01 cm2 V?1 s?1. In addition, the WS2 nanosheet networks exhibit relatively high volumetric capacitance values of 30 F cm?3. Charge transport within the network depends significantly on the applied lateral electric field and is thermally activated, which supports the notion that hopping between nanosheets is a major limiting factor for these networks and their future application.  相似文献   
746.
The field of precision oncology is rapidly progressing toward integrated “multiomics” analysis of multiple molecular species (such as DNA, RNA, or proteins) to provide a more complete profile of tumor heterogeneity. Micro/nanomaterial‐based systems, which leverage the unique properties of miniature materials, are currently well positioned to expand beyond rudimentary biomarker detection toward multiomics signature analysis. To enable clinical translation, the rational design and implementation of miniaturized systems should be driven by the unique clinical challenges present at various crucial cancer stages. This review features micro/nanomaterial‐based systems that are robustly tested on real patient samples for molecular biomarker detection at i) initial cancer screening and/or diagnosis, ii) cancer prognosis and risk stratification, and iii) longitudinal treatment/recurrence monitoring. Furthermore, this review discusses the use of micro/nanomaterials to facilitate sample preparation for different molecular biomarker species. Finally, this review deliberates on the recent paradigm shift of micro/nanomaterial‐based system innovation toward integrated multiomics cancer signature analysis and puts forth insights and perspectives on existing challenges. It is anticipated that this review could stimulate the propagation of new concepts and approaches to kick‐start a new generation of clinically translational technologies that capitalize on multiomics cancer signatures.  相似文献   
747.
Conductive polymers largely derive their electronic functionality from chemical doping, processes by which redox and charge‐transfer reactions form mobile carriers. While decades of research have demonstrated fundamentally new technologies that merge the unique functionality of these materials with the chemical versatility of macromolecules, doping and the resultant material properties are not ideal for many applications. Here, it is demonstrated that open‐shell conjugated polymers comprised of alternating cyclopentadithiophene and thiadiazoloquinoxaline units can achieve high electrical conductivities in their native “undoped” form. Spectroscopic, electrochemical, electron paramagnetic resonance, and magnetic susceptibility measurements demonstrate that this donor–acceptor architecture promotes very narrow bandgaps, strong electronic correlations, high‐spin ground states, and long‐range π‐delocalization. A comparative study of structural variants and processing methodologies demonstrates that the conductivity can be tuned up to 8.18 S cm?1. This exceeds other neutral narrow bandgap conjugated polymers, many doped polymers, radical conductors, and is comparable to commercial grades of poly(styrene‐sulfonate)‐doped poly(3,4‐ethylenedioxythiophene). X‐ray and morphological studies trace the high conductivity to rigid backbone conformations emanating from strong π‐interactions and long‐range ordered structures formed through self‐organization that lead to a network of delocalized open‐shell sites in electronic communication. The results offer a new platform for the transport of charge in molecular systems.  相似文献   
748.
Ford  Kevin 《The Ramanujan Journal》1998,2(1-2):59-66
If A is a finite set of positive integers, letE_h(A) denote the set of h-fold sums andh -fold products of elements of A. This paper is concerned with the behavior of the function f_h(k), the minimum of E_h(A) taken over all A withA=k . Upper and lower bounds for f_h(k) are proved, improving bounds given by Erds, Szemerédi, and Nathanson. Moreover, the lower bound holds when we allow A to be a finite set of arbitrary positive real numbers.  相似文献   
749.
Journal of Signal Processing Systems - Coarse Grained Reconfigurable Arrays (CGRAs) are emerging as energy efficient accelerators providing a high grade of flexibility in both academia and...  相似文献   
750.
The making of BaZrS3 thin films by molecular beam epitaxy (MBE) is demonstrated. BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3 stoichiometry and an atomically sharp interface with the LaAlO3 substrate. The films grow epitaxially via two competing growth modes: buffered epitaxy, with a self-assembled interface layer that relieves the epitaxial strain, and direct epitaxy, with rotated-cube-on-cube growth that accommodates the large lattice constant mismatch between the oxide and the sulfide perovskites. This work sets the stage for developing chalcogenide perovskites as a family of semiconductor alloys with properties that can be tuned with strain and composition in high-quality epitaxial thin films, as has been long-established for other systems including Si-Ge, III-Vs, and II-VIs. The methods demonstrated here also represent a revival of gas-source chalcogenide MBE.  相似文献   
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