Synthesis of nanocrystalline and mesoporous zinc sulphide from a single precursor Zn(SOCCH3)2Lut2 complex

We report the formation of mesoporous zinc sulphide, composed by the fine network of nanoparticles, which was formed via a single precursor Zn(SOCCH₃)₂Lut₂ complex. The complex was chemically synthesized using zinc carbonate basic, 3,5-lutidine and thioacetic acid, in air. The metal precursor complex was characterized using different conventional techniques. Thermogravimetric analysis (TGA) result indicates that the decomposition of the complex starts at 100 °C and continues up to 450 °C, finally yielding ZnS. ZnS nanocrystals were characterized by powder X-ray diffraction (XRD) technique, field emission scanning electron microscopy (FESEM), N₂-sorption isotherm, UV-vis spectroscopy and photoluminescence (PL) spectroscopy. The grain diameter of nanocrystals was found to be 4-5 nm. The material followed Type-IV N₂-sorption isotherm, which is the characteristic of mesoporous materials. The band gap energy, as obtained from optical measurements was around 3.8 eV.     

In situ electron beam irradiated rapid growth of bismuth nanoparticles in bismuth-based glass dielectrics at room temperature

In this study, in situ control growth of bismuth nanoparticles (Bi⁰ NPs) was demonstrated in bismuth-based glass dielectrics under an electron beam (EB) irradiation at room temperature. The effects of EB irradiation were investigated in situ using transmission electron microscopy (TEM), selected-area electron diffraction and high-resolution transmission electron microscopy. The EB irradiation for 2–8 min enhanced the construction of bismuth nanoparticles with a rhombohedral structure and diameter of 4–9 nm. The average particle size was found to increase with the irradiation time. Bismuth metal has a melting point of 271 °C and this low melting temperature makes easy the progress of energy induced structural changes during in situ TEM observations. This is a very useful technique in nano-patterning for integrated optics and other applications.     

Spatial Wavefunction-Switched (SWS) InGaAs FETs with II–VI Gate Insulators

This paper presents the implementation of a novel InGaAs field-effect transistor (FET), using a ZnSe-ZnS-ZnMgS-ZnS stacked gate insulator, in a spatial wavefunction-switched (SWS) structural configuration. Unlike conventional FETs, SWS devices comprise two or more asymmetric coupled quantum wells (QWs). This feature enables carrier transfer vertically from one quantum well to another or laterally to the wells of adjacent SWS-FET devices by manipulation of the gate voltages (V _g). Observation of an extra peak (near both accumulation and inversion regions) in the capacitance–voltage data in an InGaAs-AlInAs two-quantum-well SWS structure is presented as evidence of spatial switching. The peaks are attributed to the appearance of carriers first in the lower well and subsequently their transfer to the upper well as the gate voltage is increased. The electrical characteristics of a fabricated SWS InGaAs FET are also presented along with simulations of capacitance–voltage (C–V) behavior, showing the effect of wavefunction switching between wells. Finally, logic operations involving simultaneous processing of multiple bits in a device, using coded spatial location of carriers in quantum well channels, are also described.     

A dual polarized aperture coupled circular patch antenna using a C-shaped coupling slot

The design and development of a dual linearly polarized aperture coupled circular microstrip patch antenna at C-band are presented. The antenna uses a novel configuration of symmetric and asymmetric coupling slots. Variations in isolation between orthogonal feedlines and antenna axial ratio with the position of coupling slots are studied and broadband isolation and axial ratio are achieved. The prototype antenna yields 7.6 dBi peak gain, 70/spl deg/ 3-dB beam width, 25 dB cross-polarization levels and an isolation better than 28 dB between the two ports. With an external quadrature hybrid coupler connected to the two orthogonal feedlines, the antenna yields 3-dB axial ratio bandwidth of more than 30% at 5.8 GHz.     

Millimeter wave attenuation in relation to rain rate distribution over a tropical station

Rain, perhaps, is the worst offender for utilising Millimeterwaves in practice. This paper describes the rain rate distribution from which millimeterwave attenuation distribution have been attempted. Results reveal that in our location (Calcutta: lat 23°N long 88.5°E) the rain rate distribution fits well with normal distribution. The cumulative distribution of rain rate also prompted the present authors to find out rain attenuation cumulative distribution for both terrestrial and earth-space paths in millimeterwave band.     

Universality in the effective pair interaction ofd-shell metals — Compressibility and vacancy formation energy of 3d-liquid metals

Like liquid alkali metalsd-shell liquid metals show scaling behaviour in structure and interaction potentials. A realistic interaction potential model, properly parametrized can reasonably describe the universality in the isothermal compressibility and vacancy formation energy of 3d-liquid metals in electron ion plasma model.     

Effective intermolecular potential energy function. Hydrogen-bonded structure of water

The average effective pair potential energy function between two neighbouring molecules has been computed from the centre structure factor data of water and this shows an unusual feature at short range due to strong hydrogen bonding. The effective potential is highly temperature dependent and at elevated temperature it turns out to be approximately like that for simple liquids. The effective potential can be represented satisfactorily by the square well model.     

Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal–Oxide–Semiconductor Devices Using II–VI Tunnel Insulators

This paper reports the successful use of ZnSe/ZnS/ZnMgS/ZnS/ZnSe as a gate insulator stack for an InGaAs-based metal–oxide–semiconductor (MOS) device, and demonstrates the threshold voltage shift required in nonvolatile memory devices using a floating gate quantum dot layer. An InGaAs-based nonvolatile memory MOS device was fabricated using a high-κ II–VI tunnel insulator stack and self-assembled GeO _x -cladded Ge quantum dots as the charge storage units. A Si₃N₄ layer was used as the control gate insulator. Capacitance–voltage data showed that, after applying a positive voltage to the gate of a MOS device, charges were being stored in the quantum dots. This was shown by the shift in the flat-band/threshold voltage, simulating the write process of a nonvolatile memory device.     

Fast beamforming of electronically steerable parasitic array radiator antennas: theory and experiment

A low-power consumption, small-size smart antenna, named electronically steerable parasitic array radiator (ESPAR), has been designed. Beamforming is achieved by tuning the load reactances at parasitic elements surrounding the active central element. A fast beamforming algorithm based on simultaneous perturbation stochastic approximation with a maximum cross correlation coefficient criterion is proposed. The simulation and experimental results validate the algorithm. In an environment where the signal-to-interference-ratio is 0 dB, the algorithm converges within 50 iterations and achieves an output signal-to-interference-plus-noise-ratio of 10 dB. With the fast beamforming ability and its low-power consumption attribute, the ESPAR antenna makes the mass deployment of smart antenna technologies practical.     

An estimation of S/N degradation at millimeter waves during rain events

The use of Ka Band (20/30 GHz) for future satellite communications has been addressed. The exploitation of Ka band with a bandwidth of 2500 MHz seems to represent the largest significant achievement in satellite communications potential, so far. The problems associated with the use of this frequency band such as attenuation and receiver noise temperature (floor) variation with rain has been addressed. The receiver noise floor variation with rain has so far been ignored. Therefore, in view of propagation and noise study over this Ka Band, both signal attenuation and receiver noise floor variations with rain rate are estimated using dual frequency radiometers operating at 22.235 and 31.4 GHz over a tropical station, Calcutta, India.