Pomeron-Odderon interference effects in electroproduction of two pions

We study Pomeron-Odderon interference effects giving rise to charge and single-spin asymmetries in diffractive electroproduction of a pair. We calculate these asymmetries, originating from both longitudinal and transverse polarizations of the virtual photon, in the framework of QCD and in the Born approximation, in a kinematical domain accessible to HERA experiments. We predict a sizable charge asymmetry with a characteristic dependence on the invariant mass of the pair, which makes this observable very important for establishing the magnitude of the Odderon exchange in hard processes. The single-spin asymmetry turns out to be rather small. We briefly discuss future improvements of our calculations and their possible effects on the results. Received: 18 July 2002 / Published online: 25 October 2002     

Calculation of the Knight shift in palladium

The direct and the exchange core polarization (ECP) contributions of the conduction electrons to the Knight shift of palladium are evaluated. To obtain the wave functions for the conduction electrons and the partial densities of states at the Fermi surface a KKR energy band calculation was performed. The contributions of the core electrons to the Knight shift were determined by using the moment perturbation method (MP). Electron-electron interactions are taken into account by individual enhancement factors for thed ands electrons. The agreement between the theoretical results and the available experimental data is quite satisfactory.     

A note to the paper “An efficient algorithm for linear programming” of V Ch Venkaiah

In Venkaiah [1] an algorithm for solving linear optimization problems based on the idea of the projective algorithm of Karmarkar, is proposed. The essential simplification in the new algorithm is the use of a fixed projection operator. In this way the algorithm requires onlyO(n ² ) operations to obtain a sufficient exact solution. In this note it is shown that in some special cases the algorithm of Venkaiah yields a feasible solution that is far from the optimal one.     

Nanocrystalline ceramic films for efficient conversion of light into electricity

Transparent nanocrystalline films of oxide semiconductors such as TiO₂ and Fe₂O₃ have been prepared on a conducting glass support employing a sol-gel procedure. The films are composed of nanometer-sized particles sintered together to allow for percolative charge carrier transport. The internal surface of these films is very high, roughness factors of the order of 1000 being readily obtained. Electric polarization was applied for forward and reverse biasing of the films and the resulting optical changes have been analyzed to derive their flat band potential. Band gap excitation of such nanocrystalline semiconductors produces electron-hole pairs which migrate through the film to be collected as electric current. Steady state photolysis and time resolved laser techniques have been applied to scrutinize the mechanism of light induced charge separation within the nanostructure. When derivatized with a suitable chromophore, TiO₂ films give extraordinary efficiencies for the conversion of incident photons into electric current, exceeding 90% for certain transition metal complexes within the wavelength range of their absorption band. The underlying physical principles of these astonishing findings will be discussed. Exploiting this discovery, we have developed a new type of photovoltaic device whose overall light to electric energy conversion yield is 10% under simulated AM 1.5 solar radiation.     

Damage and strain in pseudomorphic vs relaxed GexSi1−x layers on Si(100) generated by Si ion irradiation

We compare both the strain and damage that 100 keV Si irradiation at room temperature introduces in pseudomorphic and relaxed Ge_xSi_1−x films grown on Si(100) substrates. The ion range is such that the Si/Ge_xSi_1−x interface is not significantly damaged. The amount of damage produced in pseudomorphic and relaxed Ge_xSi_1−x layers of similar x for irradiation doses up to 2.5 × 10¹⁴ Si/cm² is the same, which proves that a pre-existing uniform strain does not noticeably affect the irradiation-induced damage. However, the irradiation-induced strain does depend on the pre-existing strain of the samples. Possible interpretations are discussed. On leave from Inst. voor Kern en Stralingsfysika, Catholic University of Leuven, Belgium.     

Nitro musks in cosmetic products—determination by headspace solid-phase microextraction and gas chromatography with atomic-emission detection

Summary The combination of headspace solid-phase microextraction with atomic-emission detection enables highly selective and sensitive determination of itro musk compounds in cosmetic products. Sample preparation is considerably simplified; there is no solvent extraction step. Enrichment is influenced by the type and amount of cosmetic product investigated. The lowest amount giving well detectable peaks is 1 mg musk compound per kg sample. Calibration curves obtained from spiked solutions of selected reference cosmetics in water show very good linearity. Relative standard deviations of peak areas from repeated measurements are usually <10%. Presented at the 21^st ISC held in Stuttgart, Germany, 15^th–20^th September, 1996