A Novel Body-tied Silicon-On-Insulator(SOI) n-channel Metal-Oxide-Semiconductor Field-Effect Transistor with Grounded Body Electrode

A novel body-tied silicon-on-insulator(SOI) n-channel metal-oxide-semiconductor field-effect transistor with grounded body electrode named GBSOI nMOSFET has been developed by wafer bonding and etch-back technology. It has no floating body effect such as kink phenomena on the drain current curves, single-transistor latch and drain current overshoot inherent in a normal SOI device with floating body. We have characterized the interface trap density, kink phenomena on the drain current (I_DS-V_DS) curves, substrate resistance effect on the I_DS-V_DS curves, subthreshold current characteristics and single transistor latch of these transistors. We have confirmed that the GBSOI structure is suitable for high-speed and low-voltage VLSI circuits.     

Low-temperature growth of silicon-boron layer as solid diffusionsource for polysilicon contacted p+-n shallow junction

A new material, Si-B, is proposed as a solid diffusion source for fabrication of poly-Si contacted p⁺-n shallow junctions. The junction depth of the Si-B source diode has been measured and compared with that of a BF₂⁺-implanted poly-Si source diode. It was found that the Si-B source diode had a much shallower junction and was less sensitive to thermal budget than the BF₂⁺ source diode. This was attributed to the smaller surface concentration and diffusivity of boron in the silicon in Si-B source diodes. Regarding electrical characteristics of diodes with a junction depth over 500 Å, a forward ideality factor of better than 1.01 over 8 decades and a reverse-current density lower than 0.5 nA/cm² at -5 V were obtained. As the junction depth shrank to 300 Å, the ideality factor and reverse current density of diodes increased slightly to 1.05 and 1.16 nA/cm², respectively. These results demonstrated that a uniform ultrashallow p⁺-n junction can be obtained by using a thin Si-B layer as a diffusion source     

旋波媒质基本参数的一种测试方法

本文提出了直接利用旋波材料板的Ｓ参数获得其基本参数的方法。通过自由空间测量旋波材料板的反射场和透射场，可以反演得到媒质的复介电常数、复磁导率、旋波量以及透射场的轴比和旋转角，测试程序简单，结果精度高。     

产生特殊聚焦图形的二元光学元件

通过面积编码将伽博（Gabor)波带片的透过率函数的余弦分布等效为二元分布，研制了能产生各种特殊聚焦图形的二元光学元件。根据透镜聚焦的物理原理制作的二元振幅型波带片可以方便地产生多种聚焦线，给出了相应的实验结果，并讨论了改善聚焦效果的优化条件。     

Parallel BIST architecture for CAMs

A new parallel test algorithm and a built-in self test (BIST) architecture for efficient testing of various types of functional faults in content addressable memories (CAMs) are developed. The results show that efficient and practical testing with very low complexity and area overhead can be achieved     

两步相移实现投影栅相位测量轮廓术

提出一种新的投影栅相位测量方法--两步相移法。该方法只需两幅相移条纹图，因此计算量小，速度快。给出了实验及计算结果，并同四步相移法进行了比较，证明了该方法具有较高的精度。     

反向驱动的异质结有机薄膜电致发光

成功制备了结构为ITO／PDDOPV／PPQ／Al的异质结聚合物发光二极管。该器件在正反向偏压下均可发光。在正向偏压下的光发射主要来自PDDOPV，但在反向偏压下的光发射则包括来自PPQ的蓝光发射和PDDOPV的黄光发射。蓝光强度与黄光强度的比值随着反向偏压的增加而增加，当反向直流电压分别为22V、24V、26V、28V时，其电致发光光谱中PPQ与PDDOPV的峰高比IPPQ／IPDDOPV分别为1．092、1．329、1．605、2．046。换句话说，该器件的发光颜色是压控可调的，这对实现彩色显示是极为有利的。分析了在反向偏压下的发光机理以及IPPQ／IPDDOPV受电压控制的原因。     

四阶方程两点边值问题Hermite有限元解的渐近展式与外推

1引言有限元解的渐近展式是提高微分方程数值解精度的重要工具,比如亏量校正和外推就是建立在有限元解的渐近展式的基础之上．许多作者对此进行了大量的研究(见[1]-[4]),特别是文[1],提出了在研究有限元解的渐近展式中十分有用的能量嵌入技巧．本文利用能量嵌入定理得到了四阶方程两点边值问题Hermite有限元解及其二阶平均导数的渐近展式,进一步我们还讨论了它们的Richardson外推公式．考虑四阶方程两点边值问题     

Horizontal Connection and Horizontal Mean Curvature in Carnot Groups

In this paper we give a geometric interpretation of the notion of the horizontal mean curvature which is introduced by Danielli Garofalo-Nhieu and Pauls who recently introduced sub- Riemannian minimal surfaces in Carnot groups. This will be done by introducing a natural nonholonomic connection which is the restriction （projection） of the natural Riemannian connection on the horizontal bundle. For this nonholonomic connection and （intrinsic） regular hypersurfaces we introduce the notions of the horizontal second fundamental form and the horizontal shape operator. It turns out that the horizontal mean curvature is the trace of the horizontal shape operator.