虚拟现实系统中的视觉延迟研究

视觉延迟将致虚拟现实系统的沉浸感遭到破坏，并导致用户产生运动高，对产生视觉延迟的检测延迟和成像延迟进行了研究。     

The working mechanism of organic photovoltaic cell by using copper phthalocyanine as exciton blocking layer

We demonstrate the working mechanism of organic photovoltaic (OPV) cell with copper phthalocyanine (CuPc) as exciton blocking layer (EBL). The new EBL material CuPc, commonly has been used as electron donor in the organic solar cells due to its electron-donating and hole-transporting properties. But here we proves that the α-polymorph CuPc layer can transfer electrons to Al cathode through the half-filled b_1g level, this mechanism is different from that of general EBL material with larger band gap and electron-transporting property, which is based on damage states induced by the heat of evaporating Al.     

Receiver IQ Imbalance Estimation via Pure Noise for 60 GHz Systems

This paper proposes to estimate receiver (RX) IQ imbalance via pure noise for 60 GHz millimeter-wave systems. We study the impact of RX IQ imbalance on noise, and derive the maximum-likelihood algorithm to acquire the imbalance parameters, which is decoupled from transmitter IQ imbalance, channel response, and carrier offset. Also, the proposed method has low computational complexity and meets the low-power and low-cost requirements of 60 GHz systems. Moreover, the jitter performance of the estimation reaches the corresponding Cramer–Rao lower bound under a wide range of imbalance parameters.     

非致冷焦平面热成象技术及其应用

９０年代以后，非致冷红外焦平面技术的实用化成为红外热成象技术中最引入注目的突破之一，基估军事和民用领域的广泛应用前景受到国内外的普遍重视。本文综述了非致冷红外焦平面技术的两大技术途径及其特点、发展趋势和应用情况，并了发展我国非致冷红外焦平面技术的途径。     

ATM网络信息安全技术

本文描述ATM网络中的信息安全、可能受到的威胁、安全结构和端系统之间的鉴别技术。     

基于CMI及差分电流的紫外读出集成电路的研究

本文提出了一种基于电流镜镜像积分(CMI)及差分电流结构的GaN紫外探测器读出电路结构,分析了该读出电路结构的工作原理及特点.通过SPICE对电路结构进行了仿真验证,结果显示该读出电路结构可以对探测器的光响应电流信号进行有效的读取.     

光栅衍射缝间干涉因子次极大强度对称性的菲涅耳半波带法证明

本文用菲涅耳半波带法推导出了一个非常有用的次极大位置公式,将该位置公式和振幅矢量法求出的次极大位置结合起来,方便地求出了缝间干涉因子的次极大的强度,证明了缝向干涉因子的次极大强度具有对称性。避免了对振幅矢量法求次极大位置这个方程的直接求解,因为用该方法求出的次极大强度与理论值完全符合,说明菲涅耳半波带法不但可以用来分析单缝衍射,同时还完全能够用来分析光栅衍射。     

一例含阴离子水簇的钴配合物的合成、结构及理论研究

金属配合物中的水簇研究为研究宏观意义上的水以及与蛋白质分子有关的水分子提供了有效途径。本文合成了一个含有阴离子水簇的带状超分子配合物[Co(2,2-bipy)₂(N₃)₂](N₃)_0.5Cl_0.5·2H₂O(1,2, 2-bipy=2, 2-联吡啶)。单晶结构解析表明,配合物属于三斜晶系,P-1空间群,晶胞参数为:a=0.822 54(7) nm,b=1.175 58(9) nm,c=1.237 06(10) nm,α=91.379 0(10)°,β=92.151 0(10)°,γ=108.119 0(10)°,V=1.135 27(16) nm³,由一个单核[Co(2,2-bipy)₂(N₃)₂]⁺配合物阳离子、两个非配位水分子、0.5个游离的叠氮离子和0.5个氯离子组成,叠氮离子和氯离子位置无序,占有率各为50%。两个客体水分子通过强烈的分子间氢键作用形成了环状水四聚体,且与无序的N^-₃和Cl^-通过氢键作用形成了一个[(H₂O)₄(N₃)Cl]^2- 阴离子水簇。此外,本文基于密度泛函理论(DFT)对配合物[Co(2,2-bipy)₂(N₃)₂]⁺阳离子进行了量子化学计算,分析了其单点能和原子电荷,并计算了中心金属离子的氧化态,计算结果与实验相吻合。     

Dynamic Deformation of Frozen Soil at a High Strain Rate:Experiments and Damage-Coupled Constitutive Model

The dynamic compressive deformation of frozen soil was investigated by conduct-ing the split-Hopkinson pressure bar (SHPB) experiments at three temperatures and...     

Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

This study presents the construction and dielectric properties investigation of atomic-layer-deposition Al₂O₃/TiO₂/HfO₂ dielectric-film-based metal–insulator–metal (MIM) capacitors. The influence of the dielectric layer material and thickness on the performance of MIM capacitors are also systematically investigated. The morphology and surface roughness of dielectric films for different materials and thicknesses are analyzed via atomic force microscopy (AFM). Among them, the 25 nm Al₂O₃-based dielectric capacitor exhibits superior comprehensive electrical performance, including a high capacitance density of 7.89 fF·µm⁻², desirable breakdown voltage and leakage current of about 12 V and 1.4 × 10⁻¹⁰ A·cm⁻², and quadratic voltage coefficient of 303.6 ppm·V⁻². Simultaneously, the fabricated capacitor indicates desirable stability in terms of frequency and bias voltage (at 1 MHz), with the corresponding slight capacitance density variation of about 0.52 fF·µm⁻² and 0.25 fF·µm⁻². Furthermore, the mechanism of the variation in capacitance density and leakage current might be attributed to the Poole–Frenkel emission and charge-trapping effect of the high-k materials. All these results indicate potential applications in integrated passive devices.