全光纤反射式马赫曾德尔干涉型多波长滤波器的研究

对反射式的马赫－曾德尔干涉型多波长滤波器的性能作了较详细的研究，得出了两个耦合器的分光比和两臂的臂长差对其输出谱线的影响，结论对设计制作不同性能指标的该型多波长滤波器具有重要的参考价值。实验上用光纤熔融拉锥法制作了该种器件，实验结果与理论相符合。     

1+1/2对转涡轮叶排轴向间距对性能影响的研究

木文对1+1/2对转涡轮中轴向间距影响进行了初步研究。对不同轴向间距叶栅流场进行了大量时间精确模拟。研究表明,1+1/2对转涡轮高低压转叶间轴向间距成为追求高效率的制约因素,轴向间距为高压转叶喉部宽度是关键点。因此有关小轴向间距下强激波/叶排干扰的研究应该加强。     

基于BOOSt结构下不连续导电模式的PFC电路

采用现代高频功率变换技术的有源功率因数校正（Power Factor Corrector,PFC)技术是解决高频开关变换器谐波污染的有效手段。与传统的PFC电路相比，有源PFC电路的输入电流接近正弦波且与输与电压同相位，能有效抑制电流波形畸变和谐波，因此避免了对同一电网设施的干扰。在PFC电路中，Boost变换器是研究和应用得最多的一种变换器。本文着重分析了Boost电路在不连续导电模式状态下，PFC电路的临界条件，对实际电路结构的设计有很好的指导意义。     

两种方法制备ITO薄膜的红外特性分析

比较了用电束加热蒸发法和直流磁控溅射法制备的氧化锡铟(ITO)薄膜在红外波段的光学特性实验发现,通过直流磁控溅射在常温下制备的ITO薄膜在红外波段折射率稳定、消光系数小,比电子束加热蒸发制备的膜有较高的透过率在波长1550nm附近的透过率可达86%以上,消光系数约为004,方电阻最低为100Ω/□.     

无线局域网安全缺陷分析

本文介绍了Wi-Fi标准为解决无线局域网中的安全问题,相继采用的WEP、WPA、802．11i的方法,并分 析了这些方法可能存在的漏洞。同时,文中还进一步分析了VPN技术和入侵技术在无线局域网中的应用和存在的问题。 最后,介绍了我国无线局域网国家标准。     

Effects of B′-site transition metal on the properties of double perovskites Sr2FeMO6 (M=Mo, W): B′ 4d-5d system

The crystal structure, magnetic and magnetotransport properties of the variation of B′-site transition metal in Sr₂FeMO₆ (M=Mo, W) with double perovskites structure have been investigated systematically. Measurements of magnetization vs. temperature at H=5 T show that Sr₂FeMoO₆ is a ferromagnet and Sr₂FeWO₆ is an antiferromagnet with T_N∼35 K. Additionally, the large magnetoresistance ratio (MR) of ∼22% (H=3 T) at room temperature (RT) was observed in the Sr₂FeWO₆ compound. However, the Sr₂FeMoO₆ compound did not show any significant MR even at high fields and RT (MR∼1%; H=3 T and 300 K). The implications of these findings are supported by band structure calculations to explain the interaction between the 4d(Mo) and 5d(W) orbitals of transition metal ions and oxygen ions.     

High photosensitivity in cis-polyphenylacetylene films irradiated with 60Co γ-ray

This paper reports that ⁶⁰Co γ-ray irradiation can convert cis-polyphenylacetylene (cis-PPA) films prepared with rare-earth coordination catalysts to highly photosensitive materials. The dependence of the photosensitivity on irradiation dose, preparation methods, and microstructure of the PPA films has been investigated by means of a potential discharge technique. The photosensitivity was enhanced with increasing irradiation dose. The critical dose to produce a light response was 5 × 10³ Gy. The maximum surface potential discharge rate was 618 V/s, and the dark decay was approximately 2 V/s for cis-PPA films irradiated with ⁶⁰Co γ-ray (dose: 2 × 10⁵ Gy). The cis-transoidal-PPA and an electrophotographic photoreceptor device incorporating cis-PPA showed a higher irradiation effect. The structure and properties of ⁶⁰Co γ-ray irradiated rare-earth PPA films are similar to the unirradiated films.     

即时通讯软件的安全性分析

在互联网服务中,即时通讯已成为了最流行的服务模式之一,人们对即时通讯的依赖程度也与日俱增。但是, 频频出现的病毒和黑客攻击使广大用户深受其害,即时通讯的安全问题也日益严峻。为了从根本上解决问题,本文对即时通讯软件的架构和协议进行了深入分析,目的是找出漏洞根源,给开发者和使用者提供防止漏洞的依据。     

Broad-band MMICs based on modified loss-compensation method using 0.35-/spl mu/m SiGe BiCMOS technology

Using the concept of loss compensation, novel broad-band monolithic microwave integrated circuits (MMICs), including an amplifier and an analog multiplier/mixer, with LC ladder matching networks in a commercial 0.35-mum SiGe BiCMOS technology are demonstrated for the first time. An HBT two-stage cascade single-stage distributed amplifier (2-CSSDA) using the modified loss-compensation technique is presented. It demonstrates a small-signal gain of better than 15 dB from dc to 28 GHz (gain-bandwidth product=157 GHz) with a low power consumption of 48 mW and a miniature chip size of 0.63 mm² including testing pads. The gain-bandwidth product of the modified loss-compensated CSSDA is improved approximately 68% compared with the conventional attenuation-compensation technique. The wide-band amplifier achieves a high gain-bandwidth product with the lowest power consumption and smallest chip size. The broad-band mixer designed using a Gilbert cell with the modified loss-compensation technique achieves a measured power conversion gain of 19 dB with a 3-dB bandwidth from 0.1 to 23 GHz, which is the highest gain-bandwidth product of operation among previously reported MMIC mixers. As an analog multiplier, the measured sensitivity is better than 3000 V/W from 0.1 to 25 GHz, and the measured low-frequency noise floor and corner frequency can be estimated to be 20 nV/sqrt(Hz) and 1.2 kHz, respectively. The mixer performance represents state-of-the-art result of the MMIC broad-band mixers using commercial silicon-based technologies