三维光晶格中玻色凝聚气体基态波函数及干涉演化

基于Gross-Pitaevskii方程，运用有效化学势概念，研究了囚禁在组合势(由磁阱和三维光 晶格组成)中玻色凝聚气体在三维光晶格中的分布规律，并由此得到玻色凝聚气体的归 一化基态波函数.在取消组合势和仅取消光晶格而保留磁阱的两种情况下，运用传播子方 法求解出玻色凝聚气体密度分布的解析表达式.取消组合势后，理论计算所得到的玻色凝聚 气体聚随时间的演化规律与Greiner等的实验结果相一致.仅取消光晶格而保留磁阱时，研 究表明玻色凝聚气体的干涉模式呈现周期性的振荡行为.此外，在磁阱为各向异性的情况下 ， 关键词： 玻色凝聚气体 磁阱 光晶格 干涉模式     

溶胶-凝胶法制备小颗粒(Y,Gd)BO_3∶Eu及其表征

用溶胶 凝胶方法制备了平均粒径为 1～ 2 μm的小颗粒、高发射效率的 (Y ,Gd)BO3 ∶Eu红色发射荧光体。用XRD、SEM、粒度分析和PL光谱对荧光体作了表征和研究。常规固相反应合成 (Y ,Gd)BO3 ∶Eu需在 1 2 0 0℃以上才能形成均一的固溶体。而溶胶 凝胶法制取稀土正硼酸盐 80 0℃灼烧已可形成均一的单相 (Y ,Gd)BO3 ∶Eu,在 1 1 0 0℃可得到发光亮度最高的荧光体。它的亮度是常规固相反应于 1 2 0 0℃制得的荧光体的 1 2 0 %。采用溶胶 凝胶法制取 (Y ,Gd)BO3 ∶Eu荧光体 ,可在相当宽的实验条件范围内得到小粒径、窄分布和高亮度的荧光体 ,且有良好的颗粒形貌。     

Theoretical Study on the Long-lived Complexes for the Na＋I2 Collision System

For the Na I2 collision system, theoretical study is performed on the QCISD(T) level by using ab initio method. The ab initio potential energy surfaces are got and on them the long-lived complexes are found and optimized. These results verify the crossed molecule beam experimental phenomenon and the detailed geometry structures are given for the first time. The role of the complexes in the reaction path is also described in detail.     

Isolation of 2-Chloro-5-methylpyridine from its Isomer 2-Chloro-3-methylpyridine by Formation of its Copper(II) Complex

2-Chloro-5-methylpyridine is an important intermediate for the preparation of biological active compounds, especially insecticides1, e.g. imidacloprid2, and is usually manufac- tured from 3-methylpyridine N-oxide. However, the manufacturing process also forms the by-products: 3-methylpyridine and its isomer 2-chloro-3-methylpyridine3. The pro- perties of the isomers are similar, it is difficult to separate by ordinary methods, such as distillation. Scheme 1 79.4%13.6%5.2%NClCH3NCH3ClNC…     

Synthesis and Photochemical Properties of a New Substituted Phenol Covalently Linked to Ruthenium （Ⅱ） Tris-bipyridine Containing Four Ester Groups as Sensitizer

As photosensitizer for solar cell, a new ruthenium (Ⅱ) complex with four ester groups had been synthesized, in which a phenol substituted by {[(2-hydroxy-5-tert-butylbenzyl)(pyridyl-2-methyl)amino]methyl} is covalently linked to ruthenium (Ⅱ) tris-bipyridine. The structures of the new compounds were confirmed by NMR and ESI-MS spectra. The electrochemical and photochemical properties were also studied.     

Synthesis of Novel Monomeric Dyes with Anthraquinone Residue

Two novel polymerizable dyes with anthraquinone residue have been prepared, and their structures were characterized by FTIR, ^1HNMR and EA.     

Synthesis and Photocytotoxicity of Mono-functionalised Porphyrin with Valine Moiety

A mono-funtionalised tetraphenylporphyrin (TPP) bearing valine moiety at the phenyl ring was synthesized for photocytotoxicity examination in four steps, starting from regiospecific mono-nitration of TPP at the phenyl ring. The in vitro photocytotoxicitic effect against SPC-Al adenocarcinona cell line was tested.     

匹配问题实例空间和解空间结构

本文通过研究匹配问题的实例空间，匈牙利算法和解空间三者之间的关系，指出S实例空间的数目与问题复杂度之间的关系既不是充分也不是必要的，而如何对问题的解空间进行合理的分解才能是问题的关键。     

Enhanced electron emission from phosphorus-doped diamond-cladsilicon field emitter arrays

Undoped and phosphorus (P)-doped diamond-clad Si field emitter arrays have been successfully fabricated using microwave plasma chemical vapor deposition (MPCVD) technology. The electron emission from the blunt diamond-clad microtips are much higher than those for the pure Si tips with sharp curvature due to a lower work function. Furthermore, the characteristics of emission current against applied voltage for the P-doped diamond-clad tips show superior emission at lower field to the undoped ones. After the examination of Auger electron spectroscopy (AES) and electrical characteristics of as-grown diamond, such a significant enhancement of the electron emission from the P-doped diamond-clad tips is attributed to a higher electron conductivity and defect densities     

Multiple negative-differential-resistance (MNDR) phenomena of ametal-insulator-semiconductor-insulator-metal (MISIM)-like structurewith step-compositioned InxGa1-xAs quantum wells

In this paper, a new multiple negative-differential-resistance (MNDR) device based on a metal-insulator-semiconductor-insulator-metal (MISIM)-like structure with step-compositional In_xGa_1-x As quantum wells has been fabricated and demonstrated. The interesting MNDR phenomena are found in the current-voltage (I-V) characteristics of this device. At room temperature, the triple switching behaviours and quadruple stable operation states are obtained. In addition, the sixfold switching behaviors and a staircase-shaped I-V characteristic are observed at -105°C. A sequential carrier accumulation at InGaAs subwells and the potential lowering process are used to qualitatively explain the interesting MNDR phenomena. From the experimental results, it is shown that the studied device has good potential in multiple-valued logic applications