Stability of O3 + N2, O3 + O2 and O3 + CO2 double hydrates: DFT study

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State of polarization changes: Classification and measurement

We propose a standardization procedure that provides a convenient, quantitative and reproducible laboratory-based method for measuring the state of polarization (SOP) fluctuations produced by polarization varying devices. This method is based on the SOP distributions generated by commercial polarization scramblers. We show that these devices generate distributions of the maximum change of the SOP (in a given sample time) that follow Rayleigh statistics, which scale linearly with scrambling frequency and the sample time. We use this procedure to measure the SOP fluctuations in a short length of coiled fiber subject to mechanical perturbations.     

Optical-transmission characteristics of optical-fiber cables and installed optical-fiber cable networks for WDM systems

Many cables containing 1.3-/spl mu/m zero-dispersion single-mode (SM) optical fibers are installed in trunk and access networks. Recently, there have been a number of studies on wavelength-division-multiplexing (WDM) systems designed to increase transmission capacity and flexibility. If we can construct WDM systems using SM optical-fiber cable networks designed to transmit using wavelengths in the 1.3-/spl mu/m window (O-band), this will prove very effective in reducing construction costs. It is therefore important to examine the wavelength dependence of the transmission characteristics of SM optical-fiber cables and networks that have already been installed and in which several optical fibers are joined. In this paper, we describe the measured optical characteristics of SM optical-fiber cables and installed optical-fiber cable networks at various wavelengths. The optical characteristics were stable in the 1.46 to 1.625-/spl mu/m wavelength range and we confirmed that the installed SM optical-fiber cable networks could be used for WDM system applications.     

A VQ-based blind image restoration algorithm

Learning-based algorithms for image restoration and blind image restoration are proposed. Such algorithms deviate from the traditional approaches in this area, by utilizing priors that are learned from similar images. Original images and their degraded versions by the known degradation operator (restoration problem) are utilized for designing the VQ codebooks. The codevectors are designed using the blurred images. For each such vector, the high frequency information obtained from the original images is also available. During restoration, the high frequency information of a given degraded image is estimated from its low frequency information based on the codebooks. For the blind restoration problem, a number of codebooks are designed corresponding to various versions of the blurring function. Given a noisy and blurred image, one of the codebooks is chosen based on a similarity measure, therefore providing the identification of the blur. To make the restoration process computationally efficient, the principal component analysis (PCA) and VQ-nearest neighbor approaches are utilized. Simulation results are presented to demonstrate the effectiveness of the proposed algorithms.     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

Hot carrier analysis in low-temperature poly-Si thin-film transistors using pico-second time-resolved emission microscope

We have analyzed degradation of N-channel thin-film-transistor (TFT) under dynamic stress using a pico-second time-resolved emission microscope. We have successfully detected emission at pulse fall edge for the first time. Emission intensity increased with the decrease of pulse fall time. As the degradation depended on the pulse fall time, this dependence clearly illustrates that hot electrons are the dominant cause of the degradation under dynamic stress. Based on these dependences, we proposed a model considering electron traps in the poly-Si.     

Bandpass filters with reconfigurable transmission zeros using varactor-tuned tapped stubs

In this letter, bandpass filters with one or two tunable transmission zeros are proposed. The reconfigurable transmission zeros are implemented through varactors in combination with tapped quarter-wavelength stubs. Based on mixed mode simulations including EM simulation and circuit simulation, the proposed filters were designed and fabricated on low-cost FR4 board. The measurement results verified the design concepts.