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101.
A highly reliable 200 mW AlGaAs laser diode with a fundamental transverse mode has been developed, by optimising its structure with a 0.8 mu m thick p-cladding layer, a 1200 mu m long cavity length, and a front facet coating with a low reflectivity of 2%. The maximum output power was 500 mW, and stable fundamental transverse mode operation was obtained up to 350 mW. Stable operation under 200 mW and 50 degrees C was confirmed for more than 1200 h. Optical feedback noise was below 3*10/sup -14/ Hz/sup -1/.<>  相似文献   
102.
103.
The authors demonstrate 10 Gbit/s optical soliton transmission in a recirculating loop through the use of a monolithically integrated MQW-DFB-LD/MQW-EA modulator light source. The timing jitter due to the Gordon-Haus effect is successfully reduced by the optical bandpass filters conventionally used in the cascaded EDFAs to avoid the accumulation of amplified spontaneous emission. The transmission distance of 7200 km is achieved at a bit error rate of 10-9  相似文献   
104.
The dependence of the beam propagation factor (M 2 parameter) with the absorbed pump power in the case of monolithic microchip laser under face-cooled configuration is extensively studied. Our investigations show that the M 2 parameter is related to the absorbed pump power through two parameters (α and β) whose values depend on the laser material properties and laser configuration. We have shown that one parameter arises due to the oscillation of higher order modes in the microchip cavity and the other parameter accounts for the spherical aberration associated with the thermal lens induced by the pump beam. Such dependency of M 2 parameter with the absorbed pump power is experimentally verified for a face-cooled monolithic microchip laser based on Nd3+ -doped GdVO4 crystal and the values of α and β parameters were estimated from the experimentally measured data points.  相似文献   
105.
This paper reports on the first experimental observation of quantum-well states and sp-type resonances in thin single-crystal gold, silver, and copper layers formed on single-crystal W(110) surfaces, which result from spatial localization of Bloch-type electronic wave functions in a quantum well with potential barriers at the vacuum/metal and metal/W(110) interfaces. The quantization of the valence-band electronic structure in Au/W(110), Ag/W(110), and Cu/W(110) systems was studied experimentally using angle-resolved photoelectron spectroscopy.  相似文献   
106.
Haug  K. Maloberti  F. Temes  G.C. 《Electronics letters》1985,21(24):1156-1157
Compensated SC integrator stages are analysed and compared with respect to their sensitivities to finite amplifier gain effects. Simple single-stage amplifiers may be used in such circuits even in highly selective filtering applications. This may allow an extension of the present frequency range of SC circuits.  相似文献   
107.
The problem of the vector and axial-vector dominance of weak interactions within the framework of the quark model of superconductivity type is discussed.  相似文献   
108.
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110.
Dielectric properties of polymer-liquid crystal mixture, having constituent polymer, poly-butyl methacrylate (PBMA) and liquid crystal, cholesteryl nonanoate, are reported as a function of frequency and temperature. The measurement has been done in a temperature range of 300-375 K and frequency range of 100 Hz-10 MHz. The dielectric permittivity and dielectric loss shows significant changes with the addition of polymer molecules in liquid crystal. The significant feature of composite formation is that the pure liquid crystal and polymer do not show dielectric relaxation in the frequency range covered, while the composite shows relaxation peak at a particular frequency. The optical transmittance of pure liquid crystal and composite has also been measured and compared.  相似文献   
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