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61.
Sugawara F. Aoki K. Yamaguchi H. Sasaki K. Sasaki T. Fujisaki H. 《Electron Device Letters, IEEE》1997,18(10):483-485
A new lateral MOS-gated thyristor, called the Base-Current-Controlled Thyristor, is described. This device is designed so that most holes at the on-stage reach the P base through the floating P+ region adjacent to the P base and the on-state MOSFET. At the turn-off stage, the interruption of the hole current to the P base due to switching off the above MOSFET occurs simultaneously with the conventional turn-off operation. The concept of this device is verified experimentally by using the fabricated lateral device with the external MOSFET. This device exhibits a better trade-off relation between the on-state voltage and the turn-off time compared uith the conventional MOS-gated thyristor 相似文献
62.
Single-phase voltage source power converters (VSCs) under consideration are AC-DC current-controlled boost-type power converters with bidirectional power-handling capability. Equivalence between two series-connected two-level power converters and a single three-level power converter is considered here. Further considered is the series operation of three-level power converters. Simulation results and experimental verification for both are provided. Economical configurations of three-level power converters leading to multilevel waveforms are presented thereafter 相似文献
63.
Watanabe H. Komori J. Higashitani K. Sekine M. Koyama H. 《Semiconductor Manufacturing, IEEE Transactions on》1997,10(2):228-232
A novel monitoring method for plasma-charging damage is proposed. This method performs a quick and accurate evaluation using antenna PMOSFET. It was found that not only hot-carrier (HC) lifetime but transistor parameters such as initial gate current and substrate current were changed according to the degree of plasma-charging damage. However, the present work suggests that monitoring the shift of drain current after a few seconds of HC stress is a more accurate method to indicate plasma-charging damage. The monitoring method using the present test structure is demonstrated to be useful for realizing highly reliable devices 相似文献
64.
The changes in the magnetization of yttrium iron garnet (YIG) when irradiated by a pulsed neodymium laser beam with wavelength
λ=1.06 μm are investigated. Measurements are performed in the temperature range from 100 K to 600 K in various external magnetic
fields. YIG single crystals grown along the crystallographic (100), (110), and (111) directions are chosen so that the external
anisotropy of the indicated processes can be determined. Characteristic temperature intervals dominated by different mechanisms
of variation of the magnetization under the influence of a laser pulse are discussed.
Fiz. Tverd. Tela (St. Petersburg) 39, 1263–1266 (July 1997) 相似文献
65.
L. K. Aminov I. N. Kurkin D. A. Lukoyanov K. P. Chernov 《Physics of the Solid State》1997,39(8):1184-1186
Results are reported for measurements of the spin-lattice relaxation times of E′1 centers in quartz glass, produced by neutron irradiation, with the measurements made at two frequencies 9.25 and 24.0 GHz
over a wide temperature interval 1.5–300 K. The experimental data are interpreted on the basis of interaction mechanisms of
the spins with two-level systems with excitation energies ∼6, ∼26, and ∼420 cm−1. A small modification of the existing theory allows us to explain a number of features of the observed temperature and frequency
dependence of the relaxation rate. The results are compared with the data available in the literature on spin-lattice relaxation
of irradiation centers in crystalline quartz and quartz glass.
Fiz. Tverd. Tela (St. Petersburg) 39, 1335–1337 (August 1997) 相似文献
66.
Seghir K. Cristoloveanu S. Jerisian R. Oualid J. Auberton-Herve A.-J. 《Electron Devices, IEEE Transactions on》1993,40(6):1104-1111
The leakage and charge pumping currents were measured in gate-controlled MOS p-i-n diodes fabricated on thin SIMOX substrates. The efficiencies of the techniques as well as their complementary features are analyzed for various experimental conditions. The interface properties of device-grade SIMOX wafers are characterized and shown to be compatible with VLSI requirements. Special interface coupling effects, which occur only in fully depleted SOI devices and modify the conventional signature of charge pumping and leakage current, are thoroughly investigated 相似文献
67.
Tajiri A. Minakuchi K. Komeda K. Bessho Y. Inoue Y. Yodoshi K. Yamaguchi T. 《Electronics letters》1993,29(4):369-370
A highly reliable 200 mW AlGaAs laser diode with a fundamental transverse mode has been developed, by optimising its structure with a 0.8 mu m thick p-cladding layer, a 1200 mu m long cavity length, and a front facet coating with a low reflectivity of 2%. The maximum output power was 500 mW, and stable fundamental transverse mode operation was obtained up to 350 mW. Stable operation under 200 mW and 50 degrees C was confirmed for more than 1200 h. Optical feedback noise was below 3*10/sup -14/ Hz/sup -1/.<> 相似文献
68.
69.
Kawai S. Iwatsuki K. Suzuki K. Nishi S. Saruwatari M. Sato K. Wakita K. 《Electronics letters》1994,30(3):251-252
The authors demonstrate 10 Gbit/s optical soliton transmission in a recirculating loop through the use of a monolithically integrated MQW-DFB-LD/MQW-EA modulator light source. The timing jitter due to the Gordon-Haus effect is successfully reduced by the optical bandpass filters conventionally used in the cascaded EDFAs to avoid the accumulation of amplified spontaneous emission. The transmission distance of 7200 km is achieved at a bit error rate of 10-9 相似文献
70.
The dependence of the beam propagation factor (M
2 parameter) with the absorbed pump power in the case of monolithic microchip laser under face-cooled configuration is extensively
studied. Our investigations show that the M
2 parameter is related to the absorbed pump power through two parameters (α and β) whose values depend on the laser material properties and laser configuration. We have shown that one parameter arises due
to the oscillation of higher order modes in the microchip cavity and the other parameter accounts for the spherical aberration
associated with the thermal lens induced by the pump beam. Such dependency of M
2 parameter with the absorbed pump power is experimentally verified for a face-cooled monolithic microchip laser based on Nd3+ -doped GdVO4 crystal and the values of α and β parameters were estimated from the experimentally measured data points. 相似文献