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991.
992.
J. M. Rubi 《Journal of statistical physics》2006,123(2):497-498
993.
The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH4/SiF4 mixtures at 300 °C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH4 and SiF4 radicals show that the SiH4 radicals are important in the nucleation and growth of grains. However, SiF4 radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈1 1 0〉 direction. The stress investigation indicates that addition of high flow rate of SiF4 in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films. 相似文献
994.
M. A. H. Dempster 《Journal of Mathematical Sciences》2006,133(4):1422-1444
This paper gives a comprehensive treatment of EVPI-based sequential importance sampling algorithms for dynamic (multistage)
stochastic programming problems. Both theory and computational algorithms are discussed. Under general assumptions it is shown
that both an expected value of perfect information (EVPI) process and the corresponding marginal EVPI process (the supremum
norm of the conditional expectation of its generalized derivative) are nonanticipative nonnegative supermartingales. These
processes are used as importance criteria in the class of sampling algorithms treated in the paper. When their values are
negligible at a node of the current sample problem scenario tree, scenarios descending from the node are replaced by a single
scenario at the next iteration. On the other hand, high values lead to increasing the number of scenarios descending from
the node. Both the small sample and asymptotic properties of the sample problem estimates arising from the algorithms are
established, and the former are evaluated numerically in the context of a financial planning problem. Finally, current and
future research is described. Bibliography: 49 titles.
__________
Published in Zapiski Nauchnykh Seminarov POMI, Vol. 312, 2004, pp. 94–129. 相似文献
995.
In this paper we study root system generalizations of the quantum Bose-gas on the circle with pair-wise delta-function interactions.
The underlying symmetry structures are shown to be governed by the associated graded algebra of Cherednik's (suitably filtered)
degenerate double affine Hecke algebra, acting by Dunkl-type differential-reflection operators. We use Gutkin's generalization
of the equivalence between the impenetrable Bose-gas and the free Fermi-gas to derive the Bethe ansatz equations and the Bethe
ansatz eigenfunctions. 相似文献
996.
We study oscillation in a gyrotron with allowance for reflections from an output horn. Regions with different system behaviors,
such as stationary oscillation, self-modulation, and complex-dynamics regimes are found in the parameter plane. The scenarios
of appearance of chaotic oscillations are considered. It is shown that they can emerge via either a sequence of period-doubling
bifurcations or destruction of quasiperiodic motion. For chaotic attractors, Lyapunov exponents are calculated and their dimensions
are estimated on the basis of the Kaplan-Yorke formula. The dimension values turn out to be anomalously large, which is stipulated
by the presence of a large number of high-Q eigenmodes in the gyrotron cavity due to operation near the cutoff frequency of
an electrodynamic system.
__________
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 49, No. 10, pp. 887–899, October 2006. 相似文献
997.
Antoniades N. Boskovic A. Tomkos I. Madamopoulos N. Lee M. Roudas I. Pastel D. Sharma M. Yadlowsky M.J. 《Selected Areas in Communications, IEEE Journal on》2002,20(1):149-165
This paper demonstrates the use of computer simulation for topological design and performance engineering of transparent wavelength-division multiplexing metropolitan-area networks. Engineering of these networks involves the study of various transport-layer impairments such as amplifier noise, component ripple, chirp/dispersion, optical crosstalk, waveform distortion due to filter concatenation, fiber nonlinearities, and polarization effects. A computer simulation methodology composed of three main simulation steps is derived and implemented. This methodology obtains performance estimations by applying efficient wavelength-domain simulations on the entire network topology, followed by time-/frequency-domain simulations on selected paths of the network and finally Q-budgeting on an identified worst case path. The above technique provides an efficient tool for topological design and network performance engineering. Accurate simulation models are presented for each of the performance impairments, and the computer simulation methodology is used for the design and engineering of a number of actual metro network architectures 相似文献
998.
Presents a novel technique for studying the dynamics of hydrogen diffusion in optical fiber. It shows that the hydrogen contributes directly to the effective refractive index of the fiber by its dielectric susceptibility. It provides a simple theory that relates the refractive index change to the total hydrogen concentration in the fiber core. It also deduces that there is a small contribution of less than 5% to the refractive index through the photoelastic effect. A low-finesse fiber Bragg grating Fabry-Perot interferometer allows the determination of the evolution of the hydrogen concentration in situ. The experimental results obtained for isothermal and isobaric diffusion between 45/spl deg/C and 90/spl deg/C yielded values for the parameters of Arrhenius-type expressions for the diffusivity, permeability, and solubility of hydrogen in germanium/boron codoped single-mode fiber. In addition, least squares curve-fits for outdiffusion yielded the gas-phase mass-transfer coefficient as a function of temperature. 相似文献
999.
Buttari D. Chini A. Meneghesso G. Zanoni E. Moran B. Heikman S. Zhang N.Q. Shen L. Coffie R. DenBaars S.P. Mishra U.K. 《Electron Device Letters, IEEE》2002,23(2):76-78
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs 相似文献
1000.
Liang Y.C. Wenjiang Zeng Pick Hong Ong Zhaoxia Gao Jun Cai Balasubramanian N. 《Electron Device Letters, IEEE》2002,23(12):700-703
In this letter, a concise process technology is proposed for the first time to enable the fabrication of good quality three-dimensional (3-D) suspended radio frequency (RF) micro-inductors on bulk silicon, without utilizing the lithography process on sidewall and trench-bottom patterning. Samples were fabricated to demonstrate the applicability of the proposed process technology. 相似文献