Identification of gate electrode discontinuities in submicron CMOStechnologies, and effect on circuit performance

An experiment to determine the effect of gate electrode resistivity on circuit speed gave unexpected results: circuits with the lowest sheet resistance had the poorest circuit speed. Explanation of this behaviour required development of a new high-frequency method of measuring the impedance of the gate electrode. This method revealed that the circuits with a composite gate electrode had been formed with a partial discontinuity. The measurement technique is described, and the evidence of the discontinuity is shown. The effect of the discontinuity on device and circuit speed is demonstrated     

High performance CMOS current comparator

A new high-speed CMOS current comparator is described. By changing the buffer of an existing comparator from class B to class AB operation, voltage swings are reduced, resulting in greater speed for small input currents. Simulation results employing a 1.6μm CMOS technology show the response time to a 0.1μA input current to be 11ns and the power dissipation to be 1.4mW, resulting in a five times improvement in speed/power ratio over existing high-speed current comparators     

Effective index drift from molecular hydrogen diffusion inhydrogen-loaded optical fibres and its effect on Bragg gratingfabrication

When hydrogen loading is used to enhance the photosensitivity of silica-based optical waveguides and fibres, the presence of molecular hydrogen dissolved in the glass matrix changes the effective index of propagation of guided optical modes by as much as 0.05%. Real-time monitoring of the reflectivity spectrum of Bragg gratings written in such conditions shows that the centre wavelength follows the changes in hydrogen concentration due to diffusion and reaction with glass defects     

All-optical wavelength conversion by semiconductor opticalamplifiers

Following a brief introduction to the applications for wavelength conversion and the different available conversion techniques, the paper gives an in depth analysis of cross gain and cross phase wavelength conversion in semiconductor optical amplifiers. The influence of saturation filtering on the bandwidth of the converters is explained and conditions for conversion at 20 Gb/s or more are identified. The cross gain modulation scheme shows extinction ratio degradation for conversion to longer wavelengths. This can be overcome using cross phase modulation in semiconductor optical amplifiers that are integrated into interferometric structures. The first results for monolithic integrated interferometric wavelength converters are reviewed, and the quality of the converted signals is demonstrated by transmission of 10 Gb/s converted signals over 60 km of nondispersion shifted single mode fiber     

H∞ control versus disturbance-observer-basedcontrol

In the motion control field, a disturbance observer-based disturbance canceling control is often used as a robust control methodology. However, this method is nothing more than an alternative design of an integral controller, and the robust stability issue cannot be directly accounted for. In this paper, an extended H_∞ control scheme is proposed as a new robust motion control method which achieves the disturbance cancellation ability and guarantees robust stability automatically     

In the beginning [junction transistor]

The junction transistor, technologically the most important solid-state device, invented theoretically by W.B. Shockley on January 23, 1948, brought about the semiconductor revolution. That invention was triggered by the experimental discovery of the point-contact transistor by W. Brattain and J. Bardeen 38 days earlier. Bardeen's notebook entries at Bell Telephone Laboratories for the crucial 100-day period November 21, 1947-February 29, 1948 have been examined to ascertain why this winner of two Nobel Prizes in physics could not invent the junction transistor. It was found that the boundary between the thin p-type inversion layer and the n-type bulk germanium semiconductor in their original point-contact transistor discovery was characterized as a “high resistance boundary” in macroscopic electrical engineering terms by Bardeen, the electrical engineer turned mathematical physicist. Pages from Shockley's notebook are reproduced in full to show what exactly he was thinking on December 16, 1947, the day the point-contact transistor was experimentally discovered by Brattain and Bardeen. The origin of U.S. Patent 2524035 has been traced to the Bell Telephone Laboratories notebook pages of its inventors and examined. It is shown that this patent could not be considered as the first patent describing Shockley's revolutionary theoretical invention of the minority carrier injection concept underlying bipolar transistor action     

An image processing IC for backprojection and spatial histogrammingin a pipelined array

The first VLSI digital signal processor that performs both high-precision image backprojection and spatial histogram calculations at raster-scan rates as high as 30 MHz is described. Realized in 1 μm CMOS technology, this 13.3 mm×13.3 mm chip is designed to handle images as large as 1024×1024 12 b pixels. Loadable coefficients and a unified architecture allow this IC to be used with a variety of computed-tomography scanners for image reconstructions, including fan- and parallel-beam reconstruction. This chip also computes the forward Radon transform, which is a spatial histogram, permitting it to be used for iterative reconstruction algorithms. The bit lengths in the fixed-point architecture assure 12 b reconstruction accuracy     

Cortical implants for the blind

Arrays of stimulating electrodes can be placed in the brain itself, in the visual cortex, to bring vision to the profoundly blind. However, when designing such devices one needs to take into consideration the fact that the visual pathway maps images onto cortical structures in a complex and unpredictable way     

Reduction of loading effect by tungsten etchback in a magneticallyenhanced reactive ion etcher

The plug loading effect occurring during the etchback of tungsten was investigated in a magnetically enhanced reactive ion etcher using SF ₆/Ar mixtures. It was found that while the plug loading effect is independent of varying SF₆/Ar flow rate ratio and magnetic field intensity, it is reduced under the condition of high selectivity of tungsten relative to TiN which was achieved at high chamber pressure and low RF power. It is proposed that when TiN is used as a glue layer, the W etch rate enhancement in the plug is mainly controlled by a local loading effect. Under the optimized etchback conditions the plug loss was successfully controlled without the tungsten residue left on severe topology     

Airborne scatterometers: investigating ocean backscatter under low and high-wind conditions

Attempting to understand and predict weather on a local and global basis has challenged both the scientific and engineering communities. One key parameter in understanding the weather is the ocean surface wind vector because of its role in the energy exchange at the air-sea surface. scatterometers, radars that measure the reflectivity of a target offer a tool with which to remotely monitor these winds from tower-, aircraft-, and satellite-based platforms. This paper introduces three current airborne scatterometer systems, and presents data collected by these instruments under low-, moderate-, and high-wind conditions. The paper focuses on airborne scatterometers because of their ability to resolve submesoscale variations in wind fields. Discrepancies between existing theory and the observations are noted and the concerns in measuring low-wind speeds discussed. Finally, the application of using this technology for estimating the surface-wind vector during a hurricane is demonstrated