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991.
Improved fully-balanced current-mode integrator   总被引:1,自引:0,他引:1  
A high CMRR fully-balanced current-mode integrator structure is presented. The proposed structure improves the CMRR at low frequencies by a factor of gm/go. Moreover, the structure provides more flexibility to guarantee stability and is significantly less sensitive to process mismatches. The differential and common-mode gains and CMRR at low and high frequencies are analysed as well as verified in simulation  相似文献   
992.
Time-dependent reorientations of resorcinol-based acridinidione (ADR) dyes in glycerol were studied using steady-state and time-resolved fluorescence studies. The difference between fluorescence anisotropy decays recorded at 460 nm when exciting at 250 nm and those obtained when exciting at 394 nm are reported. When exciting at 394 nm, the fluorescence anisotropy decay is bi-exponential, while on exciting at 250 nm a mono-exponential fluorescence anisotropy decay is observed. We interpret this in terms of different directions of the absorption dipole at 394 and 250 nm with the emission dipole respectively, which is experimentally validated and further analysed as a prolate model of ellipsoid.  相似文献   
993.
994.
The amplification characteristics of a high Tm3+ concentration gain-shifted Tm-doped fluoride fibre amplifier (GS-TDFA) have been determined with a high input signal power. This GS-TDFA achieved the highest reported internal power conversion efficiency of 70% with a double pass configuration  相似文献   
995.
Locating faulty processors in a multiprocessor system gives the motivation for identifying codes. Denote by l the maximum number of simultaneously malfunctioning processors. We show that if l⩾3, then the problem of finding the smallest cardinality of a (1, ⩽l)-identifying code in a binary hypercube is equivalent to the problem of finding the smallest size of a (2l-1)-fold 1-covering. This observation yields infinite sequences of optimal identifying codes for every l (l⩾3)  相似文献   
996.
The recently proposed Harbola–Sahni local potential in its exchange-only version [Phys. Rev. Lett. 62 , 689 (1989)] is found to give the static dipole and quadrupole polarizabilities for the Neisoelectronic series in excellent agreement with the corresponding Hartree–Fock estimates. © 1992 John Wiley & Sons, Inc.  相似文献   
997.
A linear (m, n)-lattice system consists of m ·n elements arranged like the elements of a (m ,n)-matrix, i.e. each of the m rows includes m elements, and each of the n columns includes m elements. A circular (m,n)-lattice system consists of m circles (centered at the same point) and n rays. The intersections of the circle and the rays represent the elements, i.e. each of the circles includes n elements and each of the rays has m elements. A (linear or circular) (m, n)-lattice system is a (linear or circular) connected-X-out-of-(m,n):F lattice system if it fails whenever at least one subset of connected failed components occurs which includes failed components connected in the meaning of connected-X. The paper presents some practical examples and the reliability formulas of simple systems using results of consecutive-k-out-of-n:F systems  相似文献   
998.
Histochemical studies of epidermal Langerhans cells require well-preserved epidermal sheets. We studied the conditions for the preparation of the epidermal sheets from the skin of the ear, hind limb and trunk of nude mice. Two types of commercial dispase, and ethylenediaminetetraacetic acid (EDTA), were used at several concentrations and the effects were compared. Dermo-epidermal separation was evaluated by the preservation of ATPase activity of Langerhans cells in the epidermal sheet and by the ultrastructure of epidermal cells (Langerhans cells and keratinocytes) as well as epidermal-dermal junction. Good separation depended on the combination of the concentration of the reagent and site of the skin. The concentrations of both dispase and EDTA effective for separation of the epidermis in the nude mouse were lower than those in other mouse strains reported.  相似文献   
999.
Ultrathin dielectric materials that provide high capacitance values are needed for 64- and 256-Mb stacked DRAMs. It is shown that capacitance values as high as 12.3 fF/μm2 can be obtained with ultrathin nitride-based layers deposited on rugged polysilicon storage electrodes. These films present the reliability and low leakage current levels required for 3.3-V applications. The nitride thickness, however, cannot be scaled much below 6 nm to avoid the oxidation-punchthrough mechanisms that appear when too-thin films are unable to withstand the reoxidation step  相似文献   
1000.
InAs channel field-effect transistors of 1-μm gate length were grown by molecular beam epitaxy and observed to operate at channel electric fields (20 kV/cm) higher than previously demonstrated and several times greater than the threshold for impact ionization in bulk InAs. Voltage gains on the order of 10 were observed with transconductances as high as 414 mS/mm and output conductances as low as 33 mS/mm. These voltage gains are comparable to those of GaAs-based devices and are the highest observed for InAs channel devices. The results demonstrate the potential for practical room-temperature operation of InAs FETs  相似文献   
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