Growth temperature dependence of low-noise MESFET in molecular-beam epitaxy

The substrate growth temperature dependence of electrical properties for a low-noise MESFET fabricated on MBE-grown material has been demonstrated. The optimum noise figure and its associated gain were attributed to the higher epilayer quality and mobility at a growth temperature of 650°C between temperatures of 550°C and 700°C.     

HPLC studies of isomeric chromium-N-benzoylphenylhydroxylaminates

Summary N-Benzoylphenylhydroxylarnine complexes of some metals have been investigated by HPLC. The green chromium complex formed by this reagent shows conclusive evidence of the presence of geometrical isomers. It is photosensitive and changes to a brown modification when irradiated with ultra violet or visible light. Elution behaviour of the complexes has been studied with different solvent mixtures. Attempts have been made to characterize the complexes from different measurements.

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Untersuchung von isomeren Chrom-N-benzoylphenylhydroxylaminaten durch HPLC

     

Methods for creating the self-regulating mechanisms of passive systems for ensuring thermal regime of devices for space application

The passive systems for ensuring the thermal regime of space objects, which are in current use, can preserve the temperature at the same level only under a certain orientation of spacecraft and at a constant heat release of the equipment. At a variable orientation of the space object, its temperature may vary due to a possible illumination of the radiator-emitter of the system for ensuring the thermal regime by the solar or planet radiation. At a variable heat release the object temperature changes due to an off-design regime of the radiator operation. To compensate for the given effects the active elements are used — the heaters and coolers. This reduces the reliability of thermal regulation system and, consequently, the reliability of the entire spacecraft. The solutions are proposed, which create in the absence of active elements in the thermal regulation system the internal mechanisms enabling a compensation of the variability of heat fluxes both at a reorientation of the spacecraft and at a variation of the internal heat release.     

Influence of the energy and velocity spread in the electron beam on the starting conditions and efficiency of a gyrotron

We study theoretically the influence of the spread of initial energies and velocities in the electron beam on the starting conditions and efficiency of a gyrotron. We compare various analytical and numerical models and the results of experimental studies of gyrotrons in which the interaction takes place at the first and second harmonics of the cyclotron frequency. The aftercavity interaction of the electron beam with the high-frequency field in the output waveguide transition is taken into account. The influence of the energy spread on the recuperation efficiency is estimated. Permissible spreads of the initial energies and electron velocities are determined. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 49, No. 2, pp. 121–133, February 2006.     

An unusual transformation of perfluorinated 1- and 3-phenylpropenes to polyfluorochloroindanes by the action of AlCl3

The reaction of perfluorinated 1- and 3-phenylpropenes with AlCl₃ gives polyfluorochloroindanes as the result of an intramolecular cyclization, apparently, by an electrophilic pathway.Translated from Izvestiya Akademii Nauk SSSR, Seriya Khimicheskaya, No. 12, pp. 2854–2857, December, 1989.     

Orthogonal decompositions of a space of symmetric tensors on an almost-Kählerian manifold

Kemerovo. Translated from Sibirskii Matematicheskii Zhurnal, Vol. 30, No. 3, pp. 131–139, May–June, 1989.     

The intervalley X6→Γ6, L6 scattering time in GaAs measured by ultrafast pump-probe infrared absorption spectroscopy

A direct measurement of the dynamics of electrons in the X₆ valley for a GaAs crystal by time-resolved absorption spectroscopy is reported for the first time. IR picosecond probe pulses were used to monitor the growth and decay of the population in the X₆ valley subsequent to excitation by a 527 nm pump pulse. The intervalley X₆→Γ₆, L₆ scattering time t_x of 0.70 ± 0.50 ps is determined and the crossection for the X₆→X₇ transition is estimated to be 1.8 × 10⁻¹⁶ cm².     

A self-aligned gate III-V heterostructure FET process forultrahigh-speed digital and mixed analog/digital LSI/VLSI circuits

A planar ion-implanted self-aligned gate process for the fabrication of high-speed digital and mixed analog/digital LSI/VLSI integrated circuits is reported. A 4-b analog-to-digital converter, a 2500-gate 8×8 multiplier/accumulator, and a 4500-gate 16×16 complex multiplier have been demonstrated using enhancement-mode n⁺ -(Al,Ga)As/MODFETs, superlattice MODFETs, and doped channel heterostructure field-effect transistors (FETs) whose epitaxial layers were grown by molecular-beam epitaxy. With nominal 1-μm gate-length devices, direct-coupled FET logic ring oscillators with realistic circuit structures have propagation delays of 30 ps/stage at a power dissipation of 1.2 mW/stage. In LSI circuit operation, these gates have delays of 89 ps/gate at a power dissipation of 1.38 mW/gate when loaded with an average fan-out of 2.5 gates and about 1000 μm of high-density interconnects. High-performance voltage comparator circuits operated at sampling rates greater than 2.5 GHz at Nyquist analog input rates and with static hysteresis of less than 1 mV at room temperature. Fully functional 4-b analog-to-digital circuits operating at frequencies up to 2 GHz were obtained