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201.
Prasad  K. 《Electronics letters》1994,30(6):528-529
GaAs MESFETs were fabricated using a spin-on platinum source as the gate material. They were subsequently aged at 200°C for up to 1000 h. DC electrical characterisation of the MESFETs was carried out during various stages of annealing. The aging behaviour of these MESFETs was compared with those fabricated using conventionally evaporated platinum sources. The results show that the performance of the MESFETs fabricated using a spin-on platinum source is comparable to those of MESFETs fabricated using a conventionally evaporated platinum source  相似文献   
202.
The authors demonstrate 10 Gbit/s optical soliton transmission in a recirculating loop through the use of a monolithically integrated MQW-DFB-LD/MQW-EA modulator light source. The timing jitter due to the Gordon-Haus effect is successfully reduced by the optical bandpass filters conventionally used in the cascaded EDFAs to avoid the accumulation of amplified spontaneous emission. The transmission distance of 7200 km is achieved at a bit error rate of 10-9  相似文献   
203.
The dependence of the beam propagation factor (M 2 parameter) with the absorbed pump power in the case of monolithic microchip laser under face-cooled configuration is extensively studied. Our investigations show that the M 2 parameter is related to the absorbed pump power through two parameters (α and β) whose values depend on the laser material properties and laser configuration. We have shown that one parameter arises due to the oscillation of higher order modes in the microchip cavity and the other parameter accounts for the spherical aberration associated with the thermal lens induced by the pump beam. Such dependency of M 2 parameter with the absorbed pump power is experimentally verified for a face-cooled monolithic microchip laser based on Nd3+ -doped GdVO4 crystal and the values of α and β parameters were estimated from the experimentally measured data points.  相似文献   
204.
A 640-Gb/s high-speed ATM switching system that is based on the technologies of advanced MCM-C, 0.25-μm CMOS, and optical wavelength-division-multiplexing (WDM) interconnection is fabricated for future broadband backbone networks. A 40-layer, 160×114 mm ceramic MCM forms the basic ATM switch module with 80-Gb/s throughput. It consists of 8 advanced 0.25-μm CMOS LSIs and 32 I/O bipolar LSIs. The MCM has a 7-layer high-speed signal line structure having 50-Ω strip lines, high-speed signal lines, and 33 power supply layers formed using 50-μm thick ceramic layers to achieve high capacity. A uniquely structured closed-loop-type liquid cooling system for the MCM is used to cope with its high power dissipation of 230 W. A three-stage ATM switch is made using the optical WDM interconnection between high-performance MCMs. For WDM interconnection, newly developed compact 10-Gb/s, 8-WDM optical transmitter and receiver modules are used. These modules are each only 80×120×20 mm and dissipate 9.65 W and 22.5 W, respectively. They have a special chassis for cooling, which contains high-performance heat-conductive plates and micro-fans. An optical WDM router based on an arrayed waveguide router is used for mesh interconnection of boards. The optical WDM interconnect has 640-Gb/s throughput and simple interconnection  相似文献   
205.
This paper reports on the first experimental observation of quantum-well states and sp-type resonances in thin single-crystal gold, silver, and copper layers formed on single-crystal W(110) surfaces, which result from spatial localization of Bloch-type electronic wave functions in a quantum well with potential barriers at the vacuum/metal and metal/W(110) interfaces. The quantization of the valence-band electronic structure in Au/W(110), Ag/W(110), and Cu/W(110) systems was studied experimentally using angle-resolved photoelectron spectroscopy.  相似文献   
206.
Muon electron pairs were detected in an Al multiplate spark chamber, exposed to a neutrino beam from the CERN PS. The leptons were not accompanied by other particles, except occasionally by protons. The background came mainly from muon associated π0 production, with one decay gamma lost. It was determined empirically, together with the small contribution from υ e reactions. For electron energies above 2 GeV the background is 5.7±1.5 events, whereas 18 (μe)-candidates have been observed. Hence the effect is established, with a rate of about 10?4 as compared to the muonic reactions above 3 GeV. Charm creation as the origin of this (μe)-production process is excluded; heavy neutral lepton production does not fit the kinematics observed. Instead the events are compatible with the two-body decay of an object with variable invariant mass of order 1 GeV, possibly resulting from axion interactions.  相似文献   
207.
Haug  K. Maloberti  F. Temes  G.C. 《Electronics letters》1985,21(24):1156-1157
Compensated SC integrator stages are analysed and compared with respect to their sensitivities to finite amplifier gain effects. Simple single-stage amplifiers may be used in such circuits even in highly selective filtering applications. This may allow an extension of the present frequency range of SC circuits.  相似文献   
208.
Lanosterol derivatives with a functional group at C-32 have been synthesized from 3 beta-acetoxylanostan-7 alpha-ol. The key reaction of the synthesis is the hypoiodite reaction of 3 beta-acetoxylanostan-7 alpha-ol. In vitro antitumor activity testing of the lanosterol derivatives revealed that 3 beta-hydroxylanost-7-en-32-oic acid has antineoplastic activity.  相似文献   
209.
The problem of the vector and axial-vector dominance of weak interactions within the framework of the quark model of superconductivity type is discussed.  相似文献   
210.
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