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101.
This paper presents the design criteria, procedure, and implementation of a soft-switched power-factor-correction (PFC) circuit based on the extended-period quasi-resonant (EPQR) principles. All power electronic devices including switches and diodes in the circuit are fully soft switched. The design method is demonstrated in a prototype circuit. The operating principles are confirmed with computer simulation and experimental results. A comparison of the EP-QR operation and zero-voltage-transition (ZVT) pulse-width modulation (PWM) method 相似文献
102.
Sugawara F. Aoki K. Yamaguchi H. Sasaki K. Sasaki T. Fujisaki H. 《Electron Device Letters, IEEE》1997,18(10):483-485
A new lateral MOS-gated thyristor, called the Base-Current-Controlled Thyristor, is described. This device is designed so that most holes at the on-stage reach the P base through the floating P+ region adjacent to the P base and the on-state MOSFET. At the turn-off stage, the interruption of the hole current to the P base due to switching off the above MOSFET occurs simultaneously with the conventional turn-off operation. The concept of this device is verified experimentally by using the fabricated lateral device with the external MOSFET. This device exhibits a better trade-off relation between the on-state voltage and the turn-off time compared uith the conventional MOS-gated thyristor 相似文献
103.
Single-phase voltage source power converters (VSCs) under consideration are AC-DC current-controlled boost-type power converters with bidirectional power-handling capability. Equivalence between two series-connected two-level power converters and a single three-level power converter is considered here. Further considered is the series operation of three-level power converters. Simulation results and experimental verification for both are provided. Economical configurations of three-level power converters leading to multilevel waveforms are presented thereafter 相似文献
104.
Watanabe H. Komori J. Higashitani K. Sekine M. Koyama H. 《Semiconductor Manufacturing, IEEE Transactions on》1997,10(2):228-232
A novel monitoring method for plasma-charging damage is proposed. This method performs a quick and accurate evaluation using antenna PMOSFET. It was found that not only hot-carrier (HC) lifetime but transistor parameters such as initial gate current and substrate current were changed according to the degree of plasma-charging damage. However, the present work suggests that monitoring the shift of drain current after a few seconds of HC stress is a more accurate method to indicate plasma-charging damage. The monitoring method using the present test structure is demonstrated to be useful for realizing highly reliable devices 相似文献
105.
Hisamoto D. Umeda K. Nakamura Y. Kimura S. 《Electron Devices, IEEE Transactions on》1997,44(6):951-956
This paper describes the high performance of T-shaped-gate CMOS devices with effective channel lengths in the sub-0.1-μm region. These devices were fabricated by using selective W growth, which allows low-resistance gates smaller than 0.1 μm to be made without requiring fine lithography alignment. We used counter-doping to scale down the threshold voltage while still maintaining acceptable short-channel effects. This approach allowed us to make ring oscillators with a gate-delay time as short as 21 ps at 2 V with a gate length of 0.15 μm. Furthermore, we experimentally show that the high circuit speed of a sub-0.1-μm gate length CMOS device is mainly due to the PMOS device performance, especially in terms of its drivability 相似文献
106.
The changes in the magnetization of yttrium iron garnet (YIG) when irradiated by a pulsed neodymium laser beam with wavelength
λ=1.06 μm are investigated. Measurements are performed in the temperature range from 100 K to 600 K in various external magnetic
fields. YIG single crystals grown along the crystallographic (100), (110), and (111) directions are chosen so that the external
anisotropy of the indicated processes can be determined. Characteristic temperature intervals dominated by different mechanisms
of variation of the magnetization under the influence of a laser pulse are discussed.
Fiz. Tverd. Tela (St. Petersburg) 39, 1263–1266 (July 1997) 相似文献
107.
L. K. Aminov I. N. Kurkin D. A. Lukoyanov K. P. Chernov 《Physics of the Solid State》1997,39(8):1184-1186
Results are reported for measurements of the spin-lattice relaxation times of E′1 centers in quartz glass, produced by neutron irradiation, with the measurements made at two frequencies 9.25 and 24.0 GHz
over a wide temperature interval 1.5–300 K. The experimental data are interpreted on the basis of interaction mechanisms of
the spins with two-level systems with excitation energies ∼6, ∼26, and ∼420 cm−1. A small modification of the existing theory allows us to explain a number of features of the observed temperature and frequency
dependence of the relaxation rate. The results are compared with the data available in the literature on spin-lattice relaxation
of irradiation centers in crystalline quartz and quartz glass.
Fiz. Tverd. Tela (St. Petersburg) 39, 1335–1337 (August 1997) 相似文献
108.
Whittum D.H. Ebihara K. Hiramatsu S. Kishiro J.-i. Monaka T. Ozaki T. Takayama K. 《IEEE transactions on plasma science. IEEE Nuclear and Plasma Sciences Society》1993,21(1):136-141
Studies of microwave amplification with an in-focused electron beam drawn from an induction injector are reported. A free-electron laser (FEL) operating at 9.4 GHz and employing ion-focusing within the interaction region has achieved power in excess of 30 MW at 9.4 GHz, with a beam energy of 0.8 MeV and current of 0.7 kA. Peak gain is 20 dB/m, with no saturation after 15 wiggler periods. Also reported are the first evolution and detuning data for an ion-channel laser/maser (ICL). Two shortcomings of the prematurely halted ICL studies are poor frequency discrimination and a large axial plasma gradient. Prospects for operation with an upgraded 1.6 MeV accelerator are discussed 相似文献
109.
110.
Seghir K. Cristoloveanu S. Jerisian R. Oualid J. Auberton-Herve A.-J. 《Electron Devices, IEEE Transactions on》1993,40(6):1104-1111
The leakage and charge pumping currents were measured in gate-controlled MOS p-i-n diodes fabricated on thin SIMOX substrates. The efficiencies of the techniques as well as their complementary features are analyzed for various experimental conditions. The interface properties of device-grade SIMOX wafers are characterized and shown to be compatible with VLSI requirements. Special interface coupling effects, which occur only in fully depleted SOI devices and modify the conventional signature of charge pumping and leakage current, are thoroughly investigated 相似文献