Shock wave diffraction over a 90 degree sharp corner — Posters presented at 18th ISSW

A special poster session was run during the 18th International Symposium on Shock Waves, held on July 21 – 26, 1991, in Sendai, Japan. The purpose of this session was to compare various CFD schemes which are useful for simulating shock wave phenomena. A 2-D planar shock wave diffraction over a 90 degree sharp corner was selected as a bench mark problem. The problem specification and the output format are described below. Experimental outputs for the close flow conditions to the computational ones were also called for. Twenty six poster presentations were made at this session and the majority of the posters reflected a standard of excellence that warrants publication in the Shock Waves journal. Therefore these results are reproduced here. However, since there is a limit on the available page numbers, it was not possible to publish all the posters that were presented at the special poster session. We express our sincere thanks to all the participants in this session.     

Advanced process device technology for 0.3-μm high-performancebipolar LSIs

A new method is developed for forming shallow emitter/bases, collectors, and graft bases suitable for high-performance 0.3-μm bipolar LSIs. Fabricated 0.5-μm U-SICOS (U-groove isolated sidewall base contact structure) transistors are 44 μm², and they have an isolation width of 2.0 μm, a minimum emitter width of 0.2 μm, a maximum cutoff frequency (f_T) of 50 GHz, and a minimum ECL gate delay time of 27 ps. The key points for fabricating high-performance 0.3-μm bipolar LSIs are the control of the graft base depth and the control of the interfacial layer between emitter poly-Si and single-Si. The importance of a tradeoff relation between f_T and base resistance is also discussed     

Small silver particles in glass surface layers produced by sodium-silver ion exchange — their concentration and size depth profile

Small spherical silver particles in a surface layer of commercial flat glass were produced by means of sodium-silver ion exchange. In each volume element of the layer there is a Gaussian distribution of the particle diameters. The mean diameter increases with penetration depth. Within one individual sample it can vary from 4.5 nm immediately at the glass surface up to more than 50 nm at the end of the layer. Due to a special preparation technique the results were gained by microspectrophotometric measurements as well as by investigations carried out with the transmission electron microscope and the electron-probe microanalyzer on one and the same sample always as function of the penetration depth.     

Comparison between the effects of positive noncatastrophic HBM ESDstress in n-channel and p-channel power MOSFETs

The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain     

Characterization and Thermal Behaviour of Garnets from Almandine–Pyrope Series at 1200°C

Hyperfine Interactions - The natural garnets from almandine (Fe3Al2Si3O12)–pyrope (Mg3Al2Si3O12) series with the iron to magnesium atomic ratio ranging from 0.2 to 1 were characterised and...     

Dislocation unpinning model of acoustic emission from alkali halide crystals

The present paper reports the dislocation unpinning model of acoustic emission (AE) from alkali halide crystals. Equations are derived for the strain dependence of the transient AE pulse rate, peak value of the AE pulse rate and the total number of AE pulse emitted. It is found that the AE pulse rate should be maximum for a particular strain of the crystals. The peak value of the AE pulse rate should depend on the volume and strain rate of the crystals, and also on the pinning time of dislocations. Since the pinning time of dislocations decreases with increasing strain rate, the AE pulse rate should be weakly dependent on the strain rate of the crystals. The total number of AE should increase linearly with deformation and then it should attain a saturation value for the large deformation. By measuring the strain dependence of the AE pulse rate at a fixed strain rate, the time constantτ _s for surface annihilation of dislocations and the pinning timeτ _p of the dislocations can be determined. A good agreement is found between the theoretical and experimental results related to the AE from alkali halide crystals.     

A column generation approach for the timetabling problem of Greek high schools

A column generation (CG) approach for the solution of timetabling problems is presented. This methodology could be used for various instances of the timetabling problem, although in this paper the solution of the high-school situation in Greece is presented. The results obtained show clearly that the CG approach that has been extremely successful in recent years in the solution of airline crew scheduling problems could also be very efficient and robust for the solution of timetabling problems. Several large timetabling problems corresponding to real problems have been successfully solved, with the solutions obtained feasible and of very high quality in accordance with the problem definition. In addition, none of the solutions contained any idle hour for any of the teachers, which was one of the main goals of this optimization effort.     

Embedding and wavelet decomposition of spaces of minimal splines

On a sequence of embedded nonuniform grids, chains of embedded spaces of minimal splines (not necessarily polynomial) are constructed. The wavelet decomposition is given. The basis wavelets are compactly supported and admit simple analytic representation. The corresponding decomposition and reconstruction formulas are derived. The variety of spaces under consideration is identified with the variety of complete sequences of points of the direct product of an interval and a projective plane. Bibliography: 20 titles. __________ Translated from Problemy Matematicheskogo Analiza, No. 35, 2007, pp. 15–31     

Instability of Bose-Einstein condensates moving in optical lattices

We investigate the Landau damping of Bogoliubov excitations in a dilute Bose gas moving in an optical lattice at a finite temperature. Using a 1D tight-binding model, we explicitly obtain the Landau damping rate, the sign of which determines the stability of the condensate. We find that the sign changes at a certain velocity, which is exactly the same as the critical velocity determined by the Landau criterion of superfluidity. This coincidence reveals the microscopic mechanism of the Landau instability.