内源全息术的原理和数学描述

以往的全息术在对原子成像时,在相干光源、探测器空间分辨和信号强度三个方面遇到了难以克服的困难. 阐述了内源全息术克服这些困难的原理,研究了内源全息术的记录和再现全过程,推导出内源球面全息图的再现公式,并在散射因子球对称近似和能量无关近似下,推导出以δ函数表示原子全息再现像的解析表达式. 关键词： 内源全息术 同步辐射 晶体结构 傅里叶变换     

变In组分沟道的MM-HEMT材料电子输运特性研究

在变缓冲层高迁移率晶体管（MM_HEMT）器件中，二维电子气的输运性质对器件性能起着决定作用.通过低温下二维电子气横向电阻的量子振荡现象，结合变温度的Hall测量，系统研究了不同In组分沟道MM_HEMT器件中子带电子迁移率和浓度随温度的变化关系.结果表明，沟道中In组分为0.65的样品，材料电学性能最好，In组分高于0.65的样品，严重的晶格失配将产生位错，引起迁移率下降，大大影响材料和器件的性能. 关键词： 变缓冲层高迁移率晶体管 Shubnikov_de Hass 振荡     

丝瓜种子萌芽及子叶生长过程中谷氨酰胺合成酶同工酶的变化

测定了丝瓜种子萌芽及子叶不同生长阶段的谷氨酰胺合成酶(GS)的活性及其同工酶的变化．除了发育上的变化外，光和外源氮对GS活性及其同工酶影响也是显著的．无论外源氮(N)是否存在，GS活性在种子萌芽和子叶生长初期是逐渐升高的，于第6天达到最大，其后活性逐步降低．在光照下，外源氮对GS1诱导作用大于GS2；在无氮下，光对GS2的刺激大于GS1；在暗处，外源氮对GS1和GS2两者都有诱导作用．     

On locating low altitude moving targets using a planar acoustic sensor array

It is of engineering importance to locate low altitude moving targets with acoustic methods due to the blindness of the traditional radar detecting. In this paper, an algorithm for locating low altitude moving targets is put forward based on a five-element planar acoustic sensor array. The method is realized through estimations of the sensor-to-sensor time delays of the source signal generated by the low altitude moving target. The angle and range estimation performance of the proposed method are analyzed, respectively, both in theoretical and numerical sense.     

The 23 K superconducting phase YPd2B2C

We have carried out a systematic structural, electric, and magnetic study on Y---Pd---B---C samples with different compositions with emphasis on the as-cast and annealed YPd₅B₃C_0.3 which was first reported to superconduct at 23 K by Cava et al. We found that the tetragonal body-centered YPd₂B₂C with lattice parameters a=3.71 Å and c=10.81 Å is the phase responsible for the 23 K superconductivity and that YPd₂B₂C is metastable, which is consistent with the suggestion made by Cava et al. [1]: it is not stable at high temperatures nor stabilizable by Ni doping, although its isostructural compound, YNi₂B₂C, exists. Two new phases with Y:Pd ratios of 1:7 and 2:3, respectively, have also bee detected.     

聚丙烯微孔膜的等离子体接枝聚合改性

利用拉伸时的晶型转变致孔特性,从β晶相聚丙烯经单向或双向拉伸制得了新型聚丙烯微孔膜、用等离子体接枝聚合技术接上了亲水性聚合物如聚丙烯酸、聚丙烯腈等。研究了等离子体处理时间、单体性质对得到的亲水膜的亲水性、离子/溶质渗透性的影响。发现接枝聚丙烯酸的双向拉伸膜对Na~+、Mg~(++),尿素有较大的渗透性,并具有优良的形状稳定性。     

Chemical Speciation of Amphoteric Ions on Semi‐Dry Scrubber Residue and Bag‐House Ash from MSWI

Two series of size‐fractionated combusted residues, a bag‐house ash and a scrubber residue, from a municipal solid waste incinerator (MSWI) were prepared and extracted by means of sequential chemical extraction (SCE) procedures proposed by Tessier. Concentrations of water‐soluble phase, exchangeable phase, carbonated phase, Fe/Mn oxide phase, organic matter phase, and residual phase bound amphoteric metals (Pb and Zn) were obtained, and have been compared with those of single batch extraction of toxic characteristic leaching procedure (TCLP). In each size fraction of baghouse ash or scrubber residue, lead or zinc shows a common phenomena that the TCLP value is always lower than the content of the water‐soluble fraction. For lead, baghouse ash has a significant size‐dependent distribution on the water‐soluble phase to perform a size‐dependent test of lead in the TCLP test. The zinc TCLP data having less size dependence might be due to that neither the baghouse ash nor the scrubber residue has a size‐dependent distribution on the water‐soluble zinc phase.     

High-transconductance n-type Si/SiGe modulation-doped field-effecttransistors

The authors report on the fabrication and the resultant device characteristics of the first 0.25-μm gate-length field-effect transistor based on n-type modulation-doped Si/SiGe. Prepared using ultrahigh vacuum/chemical vapor deposition (UHV/CVD), the mobility and electron sheet charge density in the strained Si channel are 1500 (9500) cm²/V-s and 2.5×10¹² (1.5×10¹² ) cm^-2 at 300 K (77 K). At 77 K, the devices have a current and transconductance of 325 mA/mm and 600 mS/mm, respectively. These values far exceed those found in Si MESFETs and are comparable to the best results achieved in GaAs/AlGaAs modulation-doped transistors     

Hg_（1－x）Cd_xTe的扫描光致发光研究

用傅里叶变换红外扫描光致发光方法研究了Ｈｇ１－ｘＣｄｘＴｅ体单晶样品，该方法可直接得到ＨｇＣｄＴｅ晶片组分的二维平面分布，并可得到辐射复合在复合机制中所占比重的平面分布，以及晶体中非平衡载流子寿命的分布