Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO

Wet etch rates at 25°C for Zn_0.9Mg_0.1O grown on sapphire substrates by pulsed laser deposition (PLD) were in the range 300–1100 nm · min⁻¹ with HCl/H₂O (5×10⁻³−2×10⁻² M) and 120–300 nm · min⁻¹ with H₃PO₄/H₂O (5×10⁻³−2×10⁻² M). Both of these dilute mixtures exhibited diffusion-limited etching, with thermal activation energies of 2–3 kCal · mol⁻¹. By sharp contrast, the etch rates for ZnO also grown on sapphire by PLD were much slower in similar solutions, with rates of 1.2–50 nm · min⁻¹ in HCl/H₂O (0.01–1.2 M) and 12–54 nm · min⁻¹ in H₃PO₄/H₂O (0.02–0.15 M). The etching was reaction limited over the temperature range 25–75°C, with activation energies close to 6 kCal · mol⁻¹. The resulting selectivity of Zn_0.9Mg_0.1O over ZnO can be a high as ∼400 with HCl and ∼30 with H₃PO₄.     

Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors

In this letter, we report on the electrical characteristic and the comparison of the metal-insulator-metal (MIM) capacitors with PECVD silicon nitride (SiN) and silicon oxynitride (SiON). Both capacitors are found to exhibit low leakage and high breakdown field strength, as well as absence of dispersive behavior, good linearity, and comparable quality factor behaviors.     

Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers

Process technology of high-speed implant-apertured index-guide lateral-current-injection top dielectric-mirror quantum-well 850-nm vertical cavity surface-emitting lasers (VCSELs) has been developed. Oxygen and helium implantation for aperture definition and extrinsic capacitance reduction, dielectric mirror formation, p- and n-ohmic contact formation, VCSEL resistance, and thermal analysis were investigated. Employing this technology, GaAs/AlGaAs-based 850-nm VCSELs with small signal modulation bandwidths up to 11.5 Gb/s and an eye diagram generated at 12 Gb/s by a pseudorandom bit sequence of 2/sup 31/-1 were achieved. The bit-error rates were below 10/sup -13/. The threshold current is as low as 0.8 mA for 7-/spl mu/m-diameter current apertures and typical slope efficiencies of 0.45-0.5 mA/mW were obtained.     

Yb原子高激发态的斯塔克光谱

采用ππ偏振激光，通过两步激发和光电离方法，在０－１５４Ｖ／ｃｍ电场范围内，测定了Ｙｂ原子ｎ－１８附近ｍ＝０的斯塔克光谱，首次把包含斯塔克效应的能量矩阵对角化方法推广到Ｙｂ原子，所获得的理论斯塔克图与实验结果基本符合，观察到低场中斯塔克簇随电场增加呈现线性结构以及＾１Ｐ１态与斯塔克簇在抗交叉过程中振子强度发生转移的现象，讨论了结构与量子亏损的关系。     

甲基百里(香)酚蓝新负载树脂的特 性及应用

本文以金属指示剂甲基百里(香)酚蓝作为鳌合剂制得具有相应鳌合基团的负载树脂.研究了该树脂的某些分析特性及其在富集天然水中微量铜、钻、镍、锌中的应用.     

Very high-order microring resonator filters for WDM applications

High-order microring resonators having from 1 to 11 coupled cavities are demonstrated. These filters exhibit low loss, flat tops, and out-of-band rejection ratios that can exceed 80 dB. They achieve performance that is suitable for commercial applications.     

The semiclassical limit of a quantum Fermi accelerator

A classical Fermi accelerator model (FAM) is known to show chaotic behavior. The FAM is defined by a free particle bouncing elastically from two rigid walls, one fixed and the other oscillating periodically in time. The central aim of this paper is to connect the quantum and the classical solutions to the FAM in the semiclassical limit. This goal is accomplished using a finite inverted parametric oscillator (FIPO), confined to a box withfixed walls, as an alternative representation of the FAM. In the FIPO representation, an explicit correspondence between classical and quantum limits is accomplished using a Husimi representation of the quasienergy eigenfunctions.     

内源全息术的原理和数学描述

以往的全息术在对原子成像时,在相干光源、探测器空间分辨和信号强度三个方面遇到了难以克服的困难. 阐述了内源全息术克服这些困难的原理,研究了内源全息术的记录和再现全过程,推导出内源球面全息图的再现公式,并在散射因子球对称近似和能量无关近似下,推导出以δ函数表示原子全息再现像的解析表达式. 关键词： 内源全息术 同步辐射 晶体结构 傅里叶变换