Crossdocking—JIT scheduling with time windows

In this paper, we study a problem central to crossdocking that aims to eliminate or minimize storage and order picking activity using JIT scheduling. The problem is modelled naturally as a machine scheduling problem. As the problem is NP-hard, and for real-time applications, we designed and implemented two heuristics. The first uses Squeaky Wheel Optimization embedded in a Genetic Algorithm and the second uses Linear Programming within a Genetic Algorithm. Both heuristics offer good solutions in experiments where comparisons are made with the CPLEX solver.     

A 0.25-/spl mu/m CMOS quad-band GSM RF transceiver using an efficient LO frequency plan

This paper describes a single-chip CMOS quad-band (850/900/1800/1900 MHz) RF transceiver for GSM/GPRS applications. It is the most important design issue to maximize resource sharing and reuse in designing the multiband transceivers. In particular, reducing the number of voltage-controlled oscillators (VCOs) required for local oscillator (LO) frequency generation is very important because the VCO and phase-locked loop (PLL) circuits occupy a relatively large area. We propose a quad-band GSM transceiver architecture that employs a direct conversion receiver and an offset PLL transmitter, which requires only one VCO/PLL to generate LO signals by using an efficient LO frequency plan. In the receive path, four separate LNAs are used for each band, and two down-conversion mixers are used, one for the low bands (850/900 MHz) and the other for the high bands (1800/1900 MHz). A receiver baseband circuit is shared for all four bands because all of their channel spaces are the same. In the transmit path, most of the building blocks of the offset PLL, including a TX VCO and IF filters, are integrated. The quad-band GSM transceiver that was implemented in 0.25-/spl mu/m CMOS technology has a size of 3.3/spl times/3.2 mm/sup 2/, including its pad area. From the experimental results, we found that the receiver provides a maximum noise figure of 2.9 dB and a minimum IIP3 of -13.2dBm for the EGSM 900 band. The transmitter shows an rms phase error of 1.4/spl deg/ and meets the GSM spectral mask specification. The prototype chip consumes 56 and 58 mA at 2.8 V in the RX and TX modes, respectively.     

Reversible energy recovery logic circuit without non-adiabaticenergy loss

The authors propose a reversible energy recovery logic (RERL) circuit for ultra-low-energy consumption, which consumes only adiabatic energy loss and leakage current loss by completely eliminating non-adiabatic energy loss. It is a dual-rail adiabatic circuit using the concept of reversible logic with a new eight-phase clocking scheme. Simulation results show that at low-speed operation, the RERL consumes much less energy than the complementary static CMOS circuit and other adiabatic logic circuits     

Lossless subband coding system based on rounding transform

We propose a new rounding transform called the overlapping rounding transform (ORT). It is defined as a two-port input/two-port output FIR filtering system with a pair of rounding operations. The ORT is applied to develop lossless subband coding systems. The ORT approach has both a simpler representation and more possibilities for lossless subband implementation than the lifting scheme     

Laser writing techniques for photomask fabrication using a femtosecond laser

Photomasks are the backbone of microfabrication industries. Currently they are fabricated by a lithographic process, which is very expensive and time consuming since it is a multi-step process. These issues can be addressed by fabricating photomasks by direct femtosecond laser writing, which is a single-step process and comparatively cheaper and faster than lithography. In this paper we discuss our investigations on the effect of two types of laser writing techniques, namely front- and rear-side laser writing, with regard to the feature size and the edge quality of a feature. It is proved conclusively that for the patterning of masks, front-side laser writing is a better technique than rear-side laser writing with regard to smaller feature size and better edge quality. Moreover the energy required for front-side laser writing is considerably lower than that for rear-side laser writing. Received: 22 May 2001 / Accepted: 14 September 2001 / Published online: 17 October 2001     

Dynamic Point Location in General Subdivisions

The dynamic planar point location problem is the task of maintaining a dynamic set S of n nonintersecting (except possibly at endpoints) line segments in the plane under the following operations:

• Locate (: point): Report the segment immediately above , i.e., the first segment intersected by an upward vertical ray starting at ;

• Insert (: segment): Add segment to the collection of segments;

• Delete (: segment): Remove segment from the collection of segments.

We present a solution which requires space O(n) and has query and insertion time O(log n log log n) and deletion time O(log²n). The bounds for insertions and deletions are amortized. A query time below O(log²n) was previously only known for monotone subdivisions and subdivisions consisting of horizontal segments and required nonlinear space.     

Advantages of CDMA and spread spectrum techniques over FDMA andTDMA in cellular mobile radio applications

A unified theoretical method for the calculation of the radio capacity of multiple-access schemes such as FDMA (frequency-division multiple access), TDMA (time-division multiple access), CDMA (code-division multiple access) and SSMA (spread-spectrum multiple access) in noncellular and cellular mobile radio systems is presented for AWGN (additive white Gaussian noise) channels. The theoretical equivalence of all the considered multiple-access schemes is found. In a fading multipath environment, which is typical for mobile radio applications, there are significant differences between these multiple-access schemes. These differences are discussed in an illustrative manner revealing several advantages of CDMA and SSMA over FDMA and TDMA. Novel transmission and reception schemes called coherent multiple transmission and coherent multiple reception are briefly presented     

Stability control of the electrooptic effect with new maleimide copolymers containing photoreactive tricyanopyrrolidene‐based chromophores

New photocrosslinkable maleimide copolymers have been synthesized by the attachment of a tricyanopyrrolidene‐based chromophore. The 2‐(3‐cyano‐4‐(2‐{4‐[hexyl‐(6‐hydroxy‐hexyl)‐amino]‐phenyl}‐vinyl)‐5‐oxo‐1‐{4‐[4‐(3‐oxo‐3‐phenyl‐propenyl)‐ phenoxy]‐butyl}‐1,5‐dihydro‐pyrrol‐2‐ylidene)‐malononitrile chromophore exhibits nonlinear optical activity and contains a chalcone moiety that is sensitive to UV light (λ = 330–360 nm) for crosslink formation. The maleimide monomers have also been functionalized with chalcone moieties. The resultant copolymers exhibit great processability, and one of them shows a maximum electrooptic coefficient of 90 pm/V at 1300 nm. We could control the thermal stability of the electrooptic coefficient with the newly synthesized photoreactive copolymers successfully. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 531–542, 2007     

A novel phase noise reduction technique in oscillators usingdefected ground structure

A new technique to reduce the phase noise in microwave oscillators is developed using the resonant characteristic of the defected ground structure (DGS). Two kinds of oscillators have been designed and measured for the examination of the reduction of phase noise by the DGS. The first adopts the DGS section under the microstrip line at the gate circuit, while the second has only the conventional microstrip line. Measurement shows reduced phase noise by 10-15 dB in the oscillator with the DGS compared to the conventional one     

High-density plasma etching of indium-zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries

The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl₂-based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH₄/H₂/Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl₂ discharges is smooth, whereas that after etching in CH₄/H₂/Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH₄/H₂/Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH₄/H₂/Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication.