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161.
162.
A new stochastic method of reconstructing porous media 总被引:1,自引:0,他引:1
We present a new stochastic method of reconstructing porous medium from limited morphological information obtained from two-dimensional
micro- images of real porous medium. The method is similar to simulated annealing method in the capability of reconstructing
both isotropic and anisotropic structures of multi-phase but differs from the latter in that voxels for exchange are not selected
completely randomly as their neighborhood will also be checked and this new method is much simpler to implement and program.
We applied it to reconstruct real sandstone utilizing morphological information contained in porosity, two-point probability
function and linear-path function. Good agreement of those references verifies our developed method’s powerful capability.
The existing isolated regions of both pore phase and matrix phase do quite minor harm to their good connectivity. The lattice
Boltzmann method (LBM) is used to compute the permeability of the reconstructed system and the results show its good isotropy
and conductivity. However, due to the disadvantage of this method that the connectivity of the reconstructed system’s pore
space will decrease when porosity becomes small, we suggest the porosity of the system to be reconstructed be no less than
0.2 to ensure its connectivity and conductivity. 相似文献
163.
L. A. Kosyachenko I. M. Rarenko E. F. Sklyarchuk I. I. German Sun Weiguo 《Semiconductors》2006,40(5):554-557
Photodiodes designed to be sensitive in the region 0.5–1.7 μm and obtained by vacuum magnetron sputtering of the ITO (SnO2 + In2O3) layer on the surface of the Hg3In2Te6 single crystal are studied. The electrical characteristics, measured at 265–333 K, indicate that the mechanism of charge
transport in the diodes under study is thermionic. The current-voltage characteristic and its temperature variations are described
quantitatively based on the energy diagram and the found parameters of the heterojunction.
Original Russian Text ? L.A. Kosyachenko, I.M. Rarenko, E.F. Sklyarchuk, I.I. German, Sun Weiguo, 2006, published in Fizika
i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 5, pp. 568–571. 相似文献
164.
165.
166.
Generation of UV laser light by stimulated Raman scattering in D2, D2/Ar and D2/He using a pulsed Nd:YAG laser at 355nm
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A pulsed Nd:YAG laser at 355nm is used to pump Raman cell filled with D_2, D_2/Ar and D_2/He. With adequately adjusted parameters, the maximum photon conversion efficiency of the first-order Stokes light (S_1, 396.796nm) reaches 33.33% in D_2/Ar and the stability of S_1 in pure D_2 is fairly high, the energy drift being less than 10% when the pump energy drifts in the range of 5%. The conversion efficiency and stability, which are functions of the composition and pressure of the Raman medium and the energy of pump laser, are investigated. The result has been used to optimize the laser transmitter system for a differential absorption lidar system to measure NO_2 concentration profiles. 相似文献
167.
168.
Zhang Xinliang Huang Dexiu Sun Junqiang Liu Deming 《Optical and Quantum Electronics》2004,36(7):627-634
A simple scheme for single to multi-channel wavelength conversion based on cross-gain modulation of amplified spontaneous emission (ASE) spectrum in semiconductor optical amplifier (SOA) is described. Single to 16-channel wavelength conversion at 10 Gb/s is first demonstrated without any additional probe lights, the modulation information carried by input signal could be converted into arbitrary many channels if only the demultiplexer with enough channels is exploited. Output performance and pattern effects are investigated experimentally. 相似文献
169.
Xin Sun Qiang Lu Moroz V. Takeuchi H. Gebara G. Wetzel J. Shuji Ikeda Changhwan Shin Tsu-Jae King Liu 《Electron Device Letters, IEEE》2008,29(5):491-493
A tri-gate bulk MOSFET design utilizing a low-aspect-ratio channel is proposed to provide an evolutionary pathway for CMOS scaling to the end of the roadmap. 3-D device simulations indicate that this design offers the advantages of a multi-gate FET (reduced variability in performance and improved scalability) together with the advantages of a conventional planar MOSFET (low substrate cost and capability for dynamic threshold-voltage control). 相似文献
170.