Cu~+、Ag~+、Au~+与乙硫醇的气相化学反应

利用激光溅射 分子束的技术 ,结合反射飞行时间质谱计 ,研究了Cu+、Ag+、Au+与乙硫醇的气相化学反应。结果显示这三种金属离子与 (CH3 CH2 SH) n 反应形成一系列团簇离子M+(CH3 CH2 SH) n,且团簇离子尺寸不一样。Ag+、Au+与乙硫醇的反应还生成了 (CH3 CH2 SH) +n ,由此推测Cu+、Ag+、Au+与乙硫醇团簇的反应存在两种通道 ,一种通道是生成M+(CH3 CH2 SH) n,另一种是生成 (CH3 CH2 SH) +n 。Cu+、Au+与乙硫醇的反应还生成了M+(H2 S) (M =Cu、Au) ,但是实验中没有观察到Ag+(H2 S) ,理论计算表明Ag+(H2 S)很不稳定。另外 ,分析产物离子M+(CH3 CH2 SH) n 的强度发现 ,n =1～ 2之间存在明显的强度突变现象     

Buckling of a stiff thin film on a compliant substrate in large deformation

A finite-deformation theory is developed to study the mechanics of thin buckled films on compliant substrates. Perturbation analysis is performed for this highly nonlinear system to obtain the analytical solution. The results agree well with experiments and finite element analysis in wavelength and amplitude. In particular, it is found that the wavelength depends on the strain. Based on the accurate wavelength and amplitude, the membrane and peak strains in thin films, and stretchability and compressibility of the system are also obtained analytically.     

Multi-layer thin films/substrate system subjected to non-uniform misfit strains

Current methodologies used for the inference of thin film stress through curvature measurement are strictly restricted to stress and curvature states that are assumed to remain uniform over the entire film/substrate system. These methodologies have recently been extended to a single layer of thin film deposited on a substrate subjected to the non-uniform misfit strain in the thin film. Such methodologies are further extended to multi-layer thin films deposited on a substrate in the present study. Each thin film may have its own non-uniform misfit strain. We derive relations between the stresses in each thin film and the change of system curvatures due to the deposition of each thin film. The interface shear stresses between the adjacent films and between the thin film and the substrate are also obtained from the system curvatures. This provides the basis for the experimental determination of thin film stresses in multi-layer thin films on a substrate.     

一种高精度的CMOS带隙基准电压源

设计了一种采用0.25 μm CMOS工艺的高精度带隙基准电压源.该电路结构新颖,性能优异,其温度系数可达3×10-6/℃,电源抑制比可达75 dB.还增加了提高电源抑制比电路、启动电路和省功耗电路,以保证电路工作点正常、性能优良,并使电路的静态功耗较小.     

AMBE-1000声码器接口电路设计方法

DVSI公司的AMBE-1000声码器芯片是一款高性能的全双工、实时语音压缩编解码芯片,可以应用于卫星通信、保密通信、视频会议等领域.文中简要介绍AMBE-1000声码器的A/D-D/A接口以及信道接口的工作原理;结合实例分别给出了AMBE-1000声码器与PCM编解码器MC14LC5480的A/D-D/A接口电路、与单片机AT89C51的信道接口电路的设计方法;最后指出了电路设计中应该注意的问题.     

基于EP7312 LCD控制器的16级灰度实现

液晶显示器(LCD)的发展使人们对视觉显示的要求越来越高,彩色屏的可显颜色丰富程度和单色屏的灰度等级越多,视觉效果越好.想要达到好的视觉效果,除了LCD屏本身的指标要求外,还应有与之相匹配的LCD控制器.据此,文中讨论了基于EP7312微处理器的LCD控制器的8位并行超扭曲向列(STN)彩色LCD模块Optrex DMF50944和4位并行单色LCD模块Sharp LM32019T的16级灰度实现问题,并介绍了实现16级灰度的原理和实现方法.最后给出了该LCD控制器与8位并行STN彩色LCD模块的硬件接口、程序设计方案及流程.     

3G认证和密钥分配协议的形式化分析及改进

介绍了第三代移动通信系统所采用的认证和密钥分配(AKA)协议,网络归属位置寄存器/访问位置寄存器(HLR/VLR)对用户UE(用户设备)的认证过程和用户UE对网络HLR/VLR的认证过程分别采用了两种不同的认证方式,前者采用基于"询问-应答"式的认证过程,后者采用基于"知识证明"式的认证过程.使用BAN形式化逻辑分析方法分别对这两种认证过程进行了分析,指出在假定HLR与VLR之间系统安全的前提下,基于"知识证明"式的认证过程仍然存在安全漏洞.3GPP采取基于顺序号的补充措施;同时,文中指出了另一种改进方案.     

关于本地传输网网络优化的探讨

根据长期工作经验,对现有网络存在的问题进行分析,提出对本地传输网网络优化的有关建议。     

Effect of Heat Treatment on Luminescent Properties of White Organic Light Emitting Device

The white organic light emitting device (OLED) with single-structure using a polymer blend as the light emitting layer is fabricated. Heat treatment is used to control the ratio between the intensities of main electroluminescent spectral peaks. The electroluminescent spectrum of our device is quite similar to that of white inorganic LED produced by Nichia Corporation after being annealed, and its turn-on voltage can be decreased by 1V.     

基于随机相位误差Tikhonov分布的MC-DS-CDMA系统性能分析

本文针对工作于慢变频率选择性Rayleigh衰落信道中的部分相干的MC-DS-CDMA系统，基于随机相位误差的Tikhonov密度分布提出了误码率上边界的一种分析方法。仿真结果表明，随着环路信噪比的增加，相位误差损耗所产生的系统误码率性能损失变得越来越小，当环路信噪比高于系统信噪比(Eb/N0)20dB时，系统误码率性能损失小于0．2dB。在MC-DS-CDMA系统中，由于能用频率分集取代路径分集，因而接收机结构更易实现。