Stabilization of valence fluctuations in the cerium solid by the time-dependent collision approach

The collision-generated hybridization which has been found responsible for the on-site mixing of the atomic-likef-state and the band-liked states in mixed valence solids has been studied for the cerium solid. A practical expression which depends on the lattice constant and temperature has been obtained for the collision-generated hybridization. Numerical calculations show that the valence varies continuously with lattice constant and that temperature makes the transition smoother. The collision-generated hybridization is found to be of significant strength in the intermediate valence regime; but over a wide range of the valence near 3.5 it varies rather slowly without preferring a particular valence. Factors which can assist the collision-generated hybridization in stabilizing the mixed valence phase at a particular lattice constant are discussed.     

Critical points in the Bragg glass phase of a weakly pinned crystal of Ca3Rh4Sn13

New experimental data are presented on the scan rate dependence of the magnetization hysteresis width ΔM(H) (∞ critical current densityJ _c(H)) in isothermalMH scans in a weakly pinned single crystal of Ca₃Rh₄Sn₁₃, which displays second magnetization peak (SMP) anomaly as distinct from the peak effect (PE). We observe an interesting modulation in the field dependence of a parameter which purports to measure the dynamical annealing of the disordered bundles of vortices injected through the sample edges towards the destined equilibrium vortex state at a givenH. These data, in conjunction with the earlier observations made while studying the thermomagnetic history dependence inJ _c(H) in the tracing of the minor hysteresis loops, imply that the partially disordered state heals towards the more ordered state between the peak field of the SMP anomaly and the onset field of the PE. The vortex phase diagram in the given crystal of Ca₃Rh₄Sn₁₃ has been updated in the context of the notion of the phase coexistence of the ordered and disordered regions between the onset field of the SMP anomaly and the spinodal line located just prior to the irreversibility line. A multi-critical point and a critical point in the (H,T) region of the Bragg glass phase have been marked in this phase diagram and the observed behavior is discussed in the light of recent data on multi-critical point in the vortex phase diagram in a single crystal of Nb.     

Impact of nonuniform graded dopant profile in polysilicon gate on gate leakage current

In a MOSFET, a nonuniform, graded vertical dopant profile in the polysilicon gate causes a potential drop at the polysilicon/oxide interface. In this paper, the effect of this potential drop on the gate leakage current has been evaluated for the first time. The extent of variations of this affected gate leakage current with gate oxide thickness, gate length, and gate and drain bias conditions have been assessed with device simulation for an nMOS at 0.13 /spl mu/m low-voltage process. The results provide a guideline to the severity of this effect from the point of view of device and circuit operation and standby power consumption.     

Time-domain measurements with the Hewlett-Packard network analyzerHP 8510 using the matrix pencil method

The generalized pencil of function (GPOF) method, also known as the matrix pencil method, is used to improve the resolution of HP 8510B network analyzer data in the time domain. This method provides for much higher resolution than the Fourier techniques. A comparison of the two methods is given for the example of the Beatty standard. The examples show that a parametric technique such as the GPOF can provide accurate and reliable results with a high degree of resolution even when the fast Fourier transform (FFT)-based technique fails     

A double-layer current conduction model for high-κ gate dielectric materials with interfacial oxide or silicate layer

The current-voltage (I-V) characteristics of metal-oxide-semiconductor (MOS) structures with hafnium oxide as the gate dielectric film were studied. Sharp shifts from a low-voltage ohmic regime to a tunneling conduction were observed in the high-voltage range. The paper demonstrates that this behavior can be described very well with a double-layer dielectric model. Excellent fittings of the experimental curves were obtained and the related key structural and physical parameters were obtained. The model fitting further suggests the optimal annealing conditions for preparing the hafnium oxide films.     

Synthesis and studies of antibacterial activity of pongaglabol

Pongaglabol [8-hydroxy-5-phenyl-furo[2,3-h]benzo(b)pyran-7-one] was synthesized and tested for antibacterial effects againstShigella dysenteriae, Salmonella typhi, Streptococcus β-haemolyticus andStaphylococcus aureus. The synthesized compounds were characterized using UV, IR and¹H NMR spectral data     

Accurate Gain Flattening Filters Manufactured by Optical Compensation Monitoring Method

GFFs with less than 0.4 dB peak-to-peak error functions are routinely fabricated using commercially available coating machines by utilizing the natural error compensation mechanism of wavelength variable turning point optical monitoring method.     

High resolution spherical microwave holography

A practical technique is developed to determine the electric and/or magnetic field on objects and sources inside a spherical measurement surface. The technique, known as spherical microwave holography (SMH), provides a nondestructive, nonintrusive method of point-by-point evaluation of antennas and radomes over their spatial extent. The resolution capability of SMH is developed and demonstrated by measurements. Resolution in SMH is only limited by the measurement system's capabilities. Dielectric and metallic obstacles on the surface of a radome are located and identified. Resolution as small as 0.33λ₀ is demonstrated     

WIPL: a program for electromagnetic modeling of composite-wire andplate structures

WIPL is a program which allows fast and accurate analysis of antennas. The geometry of any metallic structure (even a very large structure) is defined as a combination of wires and plates. WIPL's analysis features include evaluations of the current distribution, near and far field, and impedance, admittance and s-parameters. The program uses an entire-domain Galerkin method. Efficiency of the program is based on the flexible geometrical model, and sophisticated basis functions. In this paper, the basic theory implemented in the program, and some results concerning TV UHF panel antennas and large horn antennas are given