Si/SiGe epitaxial-base transistors. I. Materials, physics, andcircuits

A detailed review of SiGe epitaxial base technology is presented, which chronicles the progression of research from materials deposition through device and integration demonstrations, culminating in the first SiGe integrated circuit application. In part I of this paper, the requirements and processes for high-quality SiGe film preparation are discussed, with emphasis on fundamental principles. A detailed overview of SiGe HBT device design and implications for circuit applications is then presented     

Photonic access concentrator for ATM gigabit switching fabrics

In future broadband communication networks the interest for purely photonic switches is due to the bandwidth mismatch between optical transmission networks and electronic switching nodes. Photonic ATM switching fabrics mainly based on wavelength-switching stages are therefore being studied, to implement high capacity switches with also concentration, multiplexing and demultiplexing functions, using state-of-the-art photonic technology. The architecture of an ATM photonic access concentrator is described in this paper, illustrating the design and implementation of its basic subsystems, the traffic concentrator and the cell multiplexer. The design guidelines are outlined in detail referring to an example, where 128 user lines at 622 Mb/s are given access to 4 outlets at 2.488 Gb/s. The corresponding implementation, based on the systematic use of cell wavelength encoding, makes use either of well-known photonic components, such as Fabry-Perot filters, fiber delay lines, splitters and combiners, either of recently developed devices, like high-speed optical gates and tunable filters and lasers. Finally, the system feasibility is demonstrated presenting the results obtained on a reduced size and speed experimental setup of the cell multiplexer     

Design and evaluation of an optically triggered monolithic sampleand hold circuit using GaAs MESFET technology

The design and evaluation of an optically triggered, fully integrated sample and hold circuit (OS/H) is described. Measured results are presented that demonstrate operation of this circuit at 250 Ms/s and with effective resolution approaching 8 bits. The integrated circuit, which measures 2.1 mm×1.4 mm, is realized in -1.0-V threshold, 20-GHz ft GaAs MESFET technology, consumes approximately 200 mW of power, and requires one optical address. The OS/H will find applications in high precision, hybrid, and integrated signal processing systems where high speed, high levels of parallelism, and low timing jitter are important. Measured results of a series photoconducting (Auston switch) OS/H realized in the same technology are presented for comparison purposes     

Impact of finite laser linewidth on the performance of OFDMnetworks employing single-cavity Fabry-Perot demultiplexers

In this paper we investigate the impact of finite laser linewidths (i.e. source partial coherence) on the crosstalk performance of optical frequency division multiplexing (OFDM) networks employing single-cavity Fabry-Perot demultiplexers. Results are presented that show the important limitation imposed by the finite laser linewidths on the attainable bit error rate (BER), maximum number of users, and the required power penalties to overcome this impairment     

Mine operating accurate stability control with optical fibersensing and Bragg grating technology: the European BRITE/EURAM STABILOSproject

Recent developments of stability control in mines, essentially based on Ge-doped fiber Bragg gratings (FBG) are reported including results about the different aspects of the system: accurate characterizations of FBG, sensor network topology and multiplexing method, user interface design and sensor packaging     

Experimental and theoretical studies on a distributed temperaturesensor based on Brillouin scattering

Results are reported from recent research on the use of the Brillouin gain/loss mechanism for distributed sensing. A theoretical model of the interaction of the pulsed and CW beams is described and compared with experiments. Results from a system with a 51 km sensing length are presented. We finally investigate issues related to the variation within the sensing fiber of the polarizations of the two beams     

The effects of plasma etching induced gate oxide degradation onMOSFET's 1/f noise

The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process     

Temperature dependence study of two-dimensional electron gas effecton the noise performance of high frequency field effect transistors

We present experimental evidence that the noise figure (NF) and associated gain equal to those achieved with GaAs pseudomorphic high electron mobility transistors (GaAs p-HEMT's) can also be accomplished by ion implanted GaAs metal-semiconductor field-effect transistors (GaAs MESFET's). These measured noise figure results as a function of low temperature for GaAs MESFET's and p-HEMT's clearly suggest that the transport properties of the two-dimensional electron gas in HEMT's and p-HEMT's do not make a significant contribution to the noise reduction at high frequency operation of these devices     

Multiresolution segmentation of respiratory electromyographicsignals

Analysis of respiratory electromyographic (EMG) signals in the study of respiratory control requires the detection of burst activity from background (signal segmentation), and focuses upon the determination of onset and cessation points of the burst activity (boundary estimation). The authors describe a new automated multiresolution technique for signal segmentation and boundary estimation. During signal segmentation, a new transitional segment is defined which contains the boundary between background a burst activity. Boundary estimation is then performed within this transitional segment. Boundary candidates are selected and a probability is attributed to each candidate, using an artificial neural network. The final boundary for a given transitional segment is the boundary estimate with the maximum a posteriori probability. This new method has proved accurate when compared to boundaries chosen by two investigators     

Molecular addressing? Studies on light-induced reorientation in liquid-crystalline side chain polymers

Polarized light leads to an effective reorientation of the optic axis in the glassy state of liquid-crystalline side chain polymers containing azobenzene mesogenic groups, via a trans-cis and cis-trans isomerization. Using a combination of U V and IR dichroitic studies it is shown for copolymers consisting of chromophores (azobenzene) and non-chromophores (phenylbenzoate) that only the chromophores are reoriented by light as far as the glassy state is concerned. Individual chromophores are thus addressed by photoselection. Photoselection in the fluid nematic state, on the other hand, leads also to a reorientation of the non-chromophores.