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111.
Planar laser-induced fluorescence visualisation is used to investigate nonuniformities in the flow of a hypersonic conical nozzle. Possible causes for the nonuniformity are outlined and investigated, and the problem is shown to be due to a small step at the nozzle throat. Entrainment of cold boundary layer gas is postulated as the cause of the signal nonuniformity. PACS 47.80.Jk, 47.40.Ki, 47.60.+i  相似文献   
112.
The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. The objective of this work is to develop devices compatible with 40-Gb/s applications. Such devices require high efficiency, ultrawide band, high optical power handling capability, and compatibility with low-cost module fabrication. The integration of mode size converters improves both the coupling efficiency and the responsivity with a large fiber mode diameter. Responsivity of 0.6 A/W and 0.45 A/W are achieved with a 6-/spl mu/m fiber mode diameter and cleaved fiber, respectively, providing relaxed alignment tolerances (/spl plusmn/1.6 /spl mu/m and /spl plusmn/2 /spl mu/m, respectively), compatible with cost-effective packaging techniques. DSTPs also offer a wide bandwidth greater than 40 GHz and transverse-electric/transverse-magnetic polarization dependence lower than 0.2 dB. Furthermore, a DSTP saturation current as high as 11 mA results in optical power handling greater than +10 dBm and a high output voltage of 0.8 V. These capabilities allow the photodiode to drive the decision circuit without the need of a broad-band electrical amplifier. The DSTP devices presented here demonstrate higher responsivities with large fiber mode diameter and better optical power handling capabilities and are compared with classical side-illuminated photodiodes.  相似文献   
113.
The combination of device speed (f/sub T/, f/sub max/ > 150 GHz) and breakdown voltage (V/sub bceo/ > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-/spl mu/m-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V/sub pp/ differential output swing, a distributed 40-Gb/s driver amplifier with 6-V/sub pp/ differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product.  相似文献   
114.
The problem of computing, in a subband audio coder, the maximum quantisation noise power that can be injected in each band to ensure transparent coding when low selectivity filter banks are used, is addressed. A low complexity strategy, taking into account the frequency responses of the synthesis filter bank, is proposed for achieving an overall distortion due to quantisation noise always below the masking threshold (provided by a psycho-acoustic model) for any length prototype filters.  相似文献   
115.
Magnetic effects of direct ion implantation of Mn and Fe into p-GaN   总被引:3,自引:0,他引:3  
In p-GaN implanted with Mn (3×1016 cm−2 at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely GaxMn1−xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation are similar to those reported for Fe doping during epitaxial growth of GaN.  相似文献   
116.
This short paper discusses the method of effectively canceling equal status normal mode noise not only on a sensor line but also on a transmission line of an optical instrument using a sensor with a sensordummy resistance  相似文献   
117.
1/f noise sources   总被引:2,自引:0,他引:2  
This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an α value with a magnitude in the order of 10-4. Damaging the crystal has a strong influence on α, α may increase by orders of magnitude. Some theoretical models are briefly discussed none of them can explain all experimental results. The α values of several semiconductors are given. These values can be used in calculations of 1/f noise in devices  相似文献   
118.
Investigated is the dependency of the crack tip opening displacement (CTOD) on the local microstructure of the heat affected zone in high-strength low-alloy (HSLA) microalloyed steel. Since the initiation of the crack tip location could not be controlled in fatigue, any possible correlation between heat iput in welding and fracture toughness could be smeared. Modified CTOD data are defined; they show that the fracture resistance of the weld joint decreased as the heat input increased.  相似文献   
119.
Residual effects of an initial bolus of gadolinium contrast agent have been previously demonstrated in sequential dynamic susceptibility contrast MR experiments. While these residual effects quickly reach a saturation steady state, their etiology is uncertain, and they can lead to spurious estimates of hemodynamic parameters in activation experiments. The possible influence ofT1effects is now investigated with experiments in whichT1weighting is varied as well as with serial regionalT1measurements. Little evidence for significant residualT1effects is found, suggesting instead that susceptibility effects underlie these observations. An initial saturation dose of contrast agent minimizes this effect.  相似文献   
120.
The investigation of the 1s HFS provides a good possibility for testing QED effects in a combination of a strong electric and magnetic field. Here, we report about the laserspectroscopic measurements of the ground state hyperfine splitting in 207Pb81+. To handle this M1-transition in the infrared optical regime with its long lifetime, we developed a new detection technique using a bunched ion beam. For the observation of fluorescence light, a new mirror system is adapted to the emission characteristics from an ion beam at relativistic velocities. This revised version was published online in July 2006 with corrections to the Cover Date.  相似文献   
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